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Patent applications and USPTO patent grants for Omata; Satoshi.The latest application filed is for "motion-pattern recognition apparatus".
Patent | Date |
---|---|
Motion-pattern recognition apparatus Grant 5,067,160 - Omata , et al. November 19, 1 | 1991-11-19 |
Semiconductor element Grant 4,982,251 - Nakagawa , et al. January 1, 1 | 1991-01-01 |
Semiconductor element Grant 4,905,072 - Komatsu , et al. * February 27, 1 | 1990-02-27 |
Active matrix-type display panel Grant 4,881,066 - Kanno , et al. November 14, 1 | 1989-11-14 |
Thin film transistor utilizing hydrogenated polycrystalline silicon Grant 4,814,842 - Nakagawa , et al. March 21, 1 | 1989-03-21 |
Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency Grant 4,766,477 - Nakagawa , et al. August 23, 1 | 1988-08-23 |
Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers Grant 4,719,501 - Nakagawa , et al. January 12, 1 | 1988-01-12 |
Method for driving liquid-crystal panel Grant 4,675,667 - Nakamura , et al. June 23, 1 | 1987-06-23 |
Method for forming deposited film Grant 4,645,684 - Osada , et al. February 24, 1 | 1987-02-24 |
Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine Grant 4,625,224 - Nakagawa , et al. November 25, 1 | 1986-11-25 |
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