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Semiconductor Device Having Capacitance Element, Arranged Close To Mos Transistor And Having Dielectric Made Of Electrostrictive Material App 20080061339 - OKONOGI; Kensuke ;   et al. | 2008-03-13 |
Method for manufacturing a semiconductor device Grant 7,338,876 - Okonogi , et al. March 4, 2 | 2008-03-04 |
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Semiconductor device packaging for avoiding metal contamination App 20070092993 - Oyu; Kiyonori ;   et al. | 2007-04-26 |
Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon Grant 7,186,632 - Ogawa , et al. March 6, 2 | 2007-03-06 |
Method for manufacturing a semiconductor device having a low junction leakage current Grant 7,151,033 - Oyu , et al. December 19, 2 | 2006-12-19 |
Semiconductor chip with a porous single crystal layer and manufacturing method of the same App 20060249075 - Oyu; Kiyonori ;   et al. | 2006-11-09 |
Method for manufacturing a semiconductor device having a low junction leakage current Grant 7,129,141 - Oyu , et al. October 31, 2 | 2006-10-31 |
Method of manufacturing semiconductor device App 20060223292 - Okonogi; Kensuke ;   et al. | 2006-10-05 |
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Method for manufacturing a semiconductor device having polysilicon plugs App 20050282335 - Okonogi, Kensuke ;   et al. | 2005-12-22 |
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Method for manufacturing a semiconductor device App 20050164448 - Okonogi, Kensuke ;   et al. | 2005-07-28 |
Method for manufacturing a semiconductor device having a low junction leakage current App 20050153526 - Oyu, Kiyonori ;   et al. | 2005-07-14 |
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Semiconductor device and fabrication process therefor App 20020127819 - Okonogi, Kensuke ;   et al. | 2002-09-12 |
Fabrication process for a semiconductor device Grant 6,448,157 - Okonogi , et al. September 10, 2 | 2002-09-10 |
Method for manufacturing semiconductor device having a STI structure App 20010046750 - Miyazaki, Shuji ;   et al. | 2001-11-29 |
Laminated SOI substrate and producing method thereof Grant 6,323,109 - Okonogi November 27, 2 | 2001-11-27 |
Semiconductor substrate having a serious effect of gettering heavy metal and method of manufacturing the same Grant 6,057,036 - Okonogi May 2, 2 | 2000-05-02 |
Silicon on insulating substrate Grant 6,004,406 - Kobayashi , et al. December 21, 1 | 1999-12-21 |
Method of removing metallic contaminants from simox substrate Grant 5,970,366 - Okonogi October 19, 1 | 1999-10-19 |
Method of cleaning a surface of a semiconductor substrate by a heat treatment in an inert gas atmosphere Grant 5,849,102 - Okonogi December 15, 1 | 1998-12-15 |
SOI substrate having a high heavy metal gettering effect for semiconductor device Grant 5,773,152 - Okonogi June 30, 1 | 1998-06-30 |
Method of manufacturing silicon on insulating substrate Grant 5,691,231 - Kobayashi , et al. November 25, 1 | 1997-11-25 |
Method of manufacturing a dielectric isolation substrate Grant 5,420,064 - Okonogi , et al. May 30, 1 | 1995-05-30 |
Laminated substrate for semiconductor device and manufacturing method thereof Grant 5,374,582 - Okonogi , et al. December 20, 1 | 1994-12-20 |