OKITA; Hideyuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for OKITA; Hideyuki.The latest application filed is for "nitride semiconductor device and method of fabricating the same".

Company Profile

4.11.18

OKITA; Hideyuki - Toyama JP
Okita; Hideyuki - Saitama JP
Okita; Hideyuki - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Nitride Semiconductor Device And Method Of Fabricating The Same App 20220254902 - OKITA; Hideyuki ; et al.	2022-08-11
Semiconductor Device App 20220190152 - OKITA; Hideyuki ; et al.	2022-06-16
Semiconductor device and method of manufacturing the device Grant 11,257,918 - Kanda , et al. February 22, 2	2022-02-22
Nitride semiconductor device and method for manufacturing the same Grant 11,171,228 - Okita , et al. November 9, 2	2021-11-09
Nitride semiconductor device and method for manufacturing same Grant 11,152,499 - Okita , et al. October 19, 2	2021-10-19
Semiconductor Device And Method Of Manufacturing The Device App 20200144386 - Kanda; Yusuke ; et al.	2020-05-07
Nitride Semiconductor Device And Method For Manufacturing The Same App 20200119178 - OKITA; Hideyuki ; et al.	2020-04-16
Nitride Semiconductor Device And Method For Manufacturing Same App 20200105917 - OKITA; Hideyuki ; et al.	2020-04-02
Semiconductor Device App 20180248027 - Okita; Hideyuki ; et al.	2018-08-30
Nitride semiconductor device and method of manufacturing the same Grant 9,859,413 - Okita , et al. January 2, 2	2018-01-02
Nitride semiconductor device and method for manufacturing same Grant 9,685,549 - Okita , et al. June 20, 2	2017-06-20
Nitride Semiconductor Device And Method Of Manufacturing The Same App 20170117403 - OKITA; Hideyuki ; et al.	2017-04-27
Semiconductor device having a semiconductor layer stacked body Grant 9,577,084 - Hikita , et al. February 21, 2	2017-02-21
Group III nitride semiconductor device which can be used as a power transistor Grant 9,412,858 - Okita , et al. August 9, 2	2016-08-09
Semiconductor Device App 20160118489 - HIKITA; MASAHIRO ; et al.	2016-04-28
Semiconductor Device App 20160118491 - OKITA; HIDEYUKI ; et al.	2016-04-28
Semiconductor device and method of manufacturing semiconductor device Grant 9,293,574 - Okita , et al. March 22, 2	2016-03-22
Semiconductor Device And Method Of Manufacturing Semiconductor Device App 20140225161 - OKITA; Hideyuki ; et al.	2014-08-14
Nitride Semiconductor Device And Method For Manufacturing Same App 20140097468 - OKITA; Hideyuki ; et al.	2014-04-10
AlGaN/GaN HEMT with normally-off threshold minimized and method of manufacturing the same Grant 8,114,726 - Marui , et al. February 14, 2	2012-02-14
AlGaN/GaN hemt with normally-off threshold minimized and method of manufacturing the same App 20110073912 - Marui; Toshiharu ; et al.	2011-03-31
Semiconductor device having a support substrate partially having metal part extending across its thickness Grant 7,812,372 - Okita October 12, 2	2010-10-12
Method for manufacturing a field effect transistor having a field plate Grant 7,811,872 - Hoshi , et al. October 12, 2	2010-10-12
Gallium nitride high electron mobility transistor App 20100224911 - Okita; Hideyuki ; et al.	2010-09-09
Semiconductor device App 20090001381 - Marui; Toshiharu ; et al.	2009-01-01
Method for manufacturing a field effect transistor having a field plate App 20080283844 - Hoshi; Shinichi ; et al.	2008-11-20
Field effect transistor having field plate electrodes App 20080272443 - Hoshi; Shinichi ; et al.	2008-11-06
Semiconductor device having a support substrate partially having metal part extending across its thickness App 20080210977 - Okita; Hideyuki	2008-09-04
Wafer for semiconductor device fabrication, method of manufacture of same, and field effect transistor App 20060214187 - Mita; Juro ; et al.	2006-09-28

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