| Patent | Date |
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Magnetic memory device having XP cell and Str cell in one chip
Grant 7,405,958 - Okazawa July 29, 2 | 2008-07-29 |
MRAM and data writing method therefor
Grant 7,009,876 - Okazawa March 7, 2 | 2006-03-07 |
Method of forming magnetic memory
Grant 6,939,722 - Okazawa , et al. September 6, 2 | 2005-09-06 |
Magnetic memory and method of operation thereof
App 20050064157 - Okazawa, Takeshi ; et al. | 2005-03-24 |
Nonvolatile memory device having data read operation with using reference cell and method thereof
Grant 6,834,018 - Okazawa , et al. December 21, 2 | 2004-12-21 |
Magnetic memory and method of operation thereof
Grant 6,812,537 - Okazawa , et al. November 2, 2 | 2004-11-02 |
Magnetic memory and method of its manufacture
Grant 6,746,875 - Okazawa , et al. June 8, 2 | 2004-06-08 |
MRAM and data writing method therefor
App 20040081004 - Okazawa, Takeshi | 2004-04-29 |
Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
Grant 6,703,249 - Okazawa , et al. March 9, 2 | 2004-03-09 |
Nonvolatile storage device and operating method thereof
Grant 6,674,663 - Okazawa , et al. January 6, 2 | 2004-01-06 |
Magnetic memory device having XP cell and STr cell in one chip
App 20030235071 - Okazawa, Takeshi | 2003-12-25 |
Nonvolatile magnetic storage device
Grant 6,643,168 - Okazawa November 4, 2 | 2003-11-04 |
Nonvolatile storage device and operating method thereof
App 20030112656 - Okazawa, Takeshi ; et al. | 2003-06-19 |
Nonvolatile memory device having data read operation with using reference cell and method thereof
App 20030086314 - Okazawa, Takeshi ; et al. | 2003-05-08 |
Magnetic memory and method of its manufacture
App 20030073253 - Okazawa, Takeshi ; et al. | 2003-04-17 |
Non-volatile semiconductor memory device with magnetic memory cell array
Grant 6,532,163 - Okazawa March 11, 2 | 2003-03-11 |
Non-volatile memory device
Grant 6,477,077 - Okazawa November 5, 2 | 2002-11-05 |
Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect
App 20020155627 - Okazawa, Takeshi ; et al. | 2002-10-24 |
Method of forming magnetic memory
App 20020146851 - Okazawa, Takeshi ; et al. | 2002-10-10 |
Nonvolatile magnetic storage device
App 20020109172 - Okazawa, Takeshi | 2002-08-15 |
Non-volatile semiconductor memory device with magnetic memory cell array
App 20020034117 - Okazawa, Takeshi | 2002-03-21 |
Non-volatile memory device
App 20020012267 - Okazawa, Takeshi | 2002-01-31 |
Nonvolatile semiconductor memory device and method for recording information
App 20020000597 - Okazawa, Takeshi | 2002-01-03 |
Nonvolatile semiconductor memory device and manufacturing method of the same
Grant 5,973,355 - Shirai , et al. October 26, 1 | 1999-10-26 |
Flash memory including improved transistor cells and a method of programming the memory
Grant 5,787,036 - Okazawa July 28, 1 | 1998-07-28 |
Floating gate type erasable and programmable read only memory cell, method of making the same, and electrically erasing and writing method
Grant 5,316,961 - Okazawa May 31, 1 | 1994-05-31 |
Method of fabricating programmable read only memory device having trench isolation structure
Grant 5,208,179 - Okazawa May 4, 1 | 1993-05-04 |
Semiconductor device having an improved thin film transistor
Grant 4,980,732 - Okazawa December 25, 1 | 1990-12-25 |
Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film
Grant 4,716,131 - Okazawa , et al. December 29, 1 | 1987-12-29 |
Semiconductor integrated circuit device of high degree of integration
Grant 4,700,212 - Okazawa October 13, 1 | 1987-10-13 |
Method of manufacturing a semiconductor device having a polycrystalline silicon layer
Grant 4,584,760 - Okazawa April 29, 1 | 1986-04-29 |
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