Patent | Date |
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Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element Grant 8,946,772 - Okagawa , et al. February 3, 2 | 2015-02-03 |
White light-emitting semiconductor devices Grant 8,829,778 - Sakuta , et al. September 9, 2 | 2014-09-09 |
Nitride semiconductor light-emitting diode device Grant 8,716,728 - Kudo , et al. May 6, 2 | 2014-05-06 |
Light Emitting Device Using Gan Led Chip App 20140061664 - JOICHI; Takahide ;   et al. | 2014-03-06 |
White Light-emitting Semiconductor Devices App 20140042896 - SAKUTA; Hiroaki ;   et al. | 2014-02-13 |
White light-emitting semiconductor devices Grant 8,581,488 - Sakuta , et al. November 12, 2 | 2013-11-12 |
Light emitting device using GaN LED chip Grant 8,455,886 - Joichi , et al. June 4, 2 | 2013-06-04 |
LIGHT EMITTING DEVICE USING GaN LED CHIP App 20120175669 - Joichi; Takahide ;   et al. | 2012-07-12 |
Gan Led Element And Light Emitting Device Having A Structure To Reduce Light Absorption By A Pad Electrode Included Therein App 20120171796 - Hiraoka; Shin ;   et al. | 2012-07-05 |
White Light-emitting Semiconductor Devices App 20120112626 - SAKUTA; Hiroaki ;   et al. | 2012-05-10 |
GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein Grant 8,158,994 - Hiraoka , et al. April 17, 2 | 2012-04-17 |
Light emitting device using GaN LED chip Grant 8,158,990 - Joichi , et al. April 17, 2 | 2012-04-17 |
Led Element And Method For Manufacturing Led Element App 20110260196 - OKAGAWA; Hiroaki ;   et al. | 2011-10-27 |
Semiconductor element and method for manufacturing same Grant 8,012,783 - Takano , et al. September 6, 2 | 2011-09-06 |
SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT App 20110198560 - Okagawa; Hiroaki ;   et al. | 2011-08-18 |
Led Element And Method For Manufacturing Led Element App 20110012154 - Okagawa; Hiroaki ;   et al. | 2011-01-20 |
Nitride Semiconductor Light-emitting Diode Device App 20100314642 - Kudo; Hiromitsu ;   et al. | 2010-12-16 |
Light emitting device using gan led chip App 20100019247 - Joichi; Takahide ;   et al. | 2010-01-28 |
Gan Led Element And Light Emitting Device App 20100012971 - Hiraoka; Shin ;   et al. | 2010-01-21 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method Grant 7,589,001 - Tadatomo , et al. September 15, 2 | 2009-09-15 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method Grant 7,504,324 - Tadatomo , et al. March 17, 2 | 2009-03-17 |
Semiconductor Element and Method for Manufacturing Same App 20090065938 - Takano; Tsuyoshi ;   et al. | 2009-03-12 |
Nitride Semiconductor Light Emitting Element and Method for Manufacturing the Same App 20080135868 - Okagawa; Hiroaki ;   et al. | 2008-06-12 |
Nitride Semiconductor Light-Emitting Device App 20080048194 - Kudo; Hiromitsu ;   et al. | 2008-02-28 |
Semiconductor base material and method of manufacturing the material Grant 7,179,667 - Okagawa , et al. February 20, 2 | 2007-02-20 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method App 20070026643 - Tadatomo; Kazuyuki ;   et al. | 2007-02-01 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method App 20070026644 - Tadatomo; Kazuyuki ;   et al. | 2007-02-01 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method Grant 7,115,486 - Tadatomo , et al. October 3, 2 | 2006-10-03 |
GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof Grant 7,053,420 - Tadatomo , et al. May 30, 2 | 2006-05-30 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method Grant 6,940,098 - Tadatomo , et al. September 6, 2 | 2005-09-06 |
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method App 20040206299 - Tadatomo, Kazuyuki ;   et al. | 2004-10-21 |
Method for growing GaN compound semiconductor crystal and semiconductor substrate Grant 6,794,210 - Ouchi , et al. September 21, 2 | 2004-09-21 |
Semiconductor light-emitting device App 20040113166 - Tadatomo, Kazuyuki ;   et al. | 2004-06-17 |
Method for growing GaN compound semiconductor crystal and semiconductor substrate App 20040094084 - Ouchi, Yoichiro ;   et al. | 2004-05-20 |
Semiconductor light receiving element Grant 6,734,515 - Tadatomo , et al. May 11, 2 | 2004-05-11 |
Multi-wavelength luminous element App 20040056258 - Tadatomo, Kazuyuki ;   et al. | 2004-03-25 |
Semiconductor base material and method of manufacturing the material App 20040048471 - Okagawa, Hiroaki ;   et al. | 2004-03-11 |
Method for growing GaN compound semiconductor crystal and semiconductor substrate Grant 6,700,179 - Ouchi , et al. March 2, 2 | 2004-03-02 |
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof Grant 6,225,650 - Tadatomo , et al. May 1, 2 | 2001-05-01 |
GaN single crystal Grant 5,810,925 - Tadatomo , et al. September 22, 1 | 1998-09-22 |
Group-III nitride based light emitter Grant 5,793,061 - Ohuchi , et al. August 11, 1 | 1998-08-11 |
Gan single crystal Grant 5,770,887 - Tadatomo , et al. June 23, 1 | 1998-06-23 |
Semiconductor light emitting element with In GaAlP active layer of specified thickness Grant 5,710,440 - Okagawa , et al. January 20, 1 | 1998-01-20 |
Semiconductor light emitting element with reflecting layers Grant 5,414,281 - Watabe , et al. May 9, 1 | 1995-05-09 |