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name:-0.028331995010376
name:-0.00047707557678223
Okagawa; Hiroaki Patent Filings

Okagawa; Hiroaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Okagawa; Hiroaki.The latest application filed is for "light emitting device using gan led chip".

Company Profile
0.28.21
  • Okagawa; Hiroaki - Ibaraki N/A JP
  • Okagawa; Hiroaki - Tokyo JP
  • Okagawa; Hiroaki - Ushiku JP
  • OKAGAWA; HIROAKI - Amagasaki-shi JP
  • Okagawa; Hiroaki - Amagasaki N/A JP
  • Okagawa; Hiroaki - Ushiku-shi JP
  • Okagawa; Hiroaki - Hyogo JP
  • Okagawa; Hiroaki - Itami JP
  • Okagawa; Hiroaki - Itami-shi JP
  • Okagawa, Hiroaki - Itami-shi Hyogo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element
Grant 8,946,772 - Okagawa , et al. February 3, 2
2015-02-03
White light-emitting semiconductor devices
Grant 8,829,778 - Sakuta , et al. September 9, 2
2014-09-09
Nitride semiconductor light-emitting diode device
Grant 8,716,728 - Kudo , et al. May 6, 2
2014-05-06
Light Emitting Device Using Gan Led Chip
App 20140061664 - JOICHI; Takahide ;   et al.
2014-03-06
White Light-emitting Semiconductor Devices
App 20140042896 - SAKUTA; Hiroaki ;   et al.
2014-02-13
White light-emitting semiconductor devices
Grant 8,581,488 - Sakuta , et al. November 12, 2
2013-11-12
Light emitting device using GaN LED chip
Grant 8,455,886 - Joichi , et al. June 4, 2
2013-06-04
LIGHT EMITTING DEVICE USING GaN LED CHIP
App 20120175669 - Joichi; Takahide ;   et al.
2012-07-12
Gan Led Element And Light Emitting Device Having A Structure To Reduce Light Absorption By A Pad Electrode Included Therein
App 20120171796 - Hiraoka; Shin ;   et al.
2012-07-05
White Light-emitting Semiconductor Devices
App 20120112626 - SAKUTA; Hiroaki ;   et al.
2012-05-10
GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein
Grant 8,158,994 - Hiraoka , et al. April 17, 2
2012-04-17
Light emitting device using GaN LED chip
Grant 8,158,990 - Joichi , et al. April 17, 2
2012-04-17
Led Element And Method For Manufacturing Led Element
App 20110260196 - OKAGAWA; Hiroaki ;   et al.
2011-10-27
Semiconductor element and method for manufacturing same
Grant 8,012,783 - Takano , et al. September 6, 2
2011-09-06
SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT
App 20110198560 - Okagawa; Hiroaki ;   et al.
2011-08-18
Led Element And Method For Manufacturing Led Element
App 20110012154 - Okagawa; Hiroaki ;   et al.
2011-01-20
Nitride Semiconductor Light-emitting Diode Device
App 20100314642 - Kudo; Hiromitsu ;   et al.
2010-12-16
Light emitting device using gan led chip
App 20100019247 - Joichi; Takahide ;   et al.
2010-01-28
Gan Led Element And Light Emitting Device
App 20100012971 - Hiraoka; Shin ;   et al.
2010-01-21
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
Grant 7,589,001 - Tadatomo , et al. September 15, 2
2009-09-15
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
Grant 7,504,324 - Tadatomo , et al. March 17, 2
2009-03-17
Semiconductor Element and Method for Manufacturing Same
App 20090065938 - Takano; Tsuyoshi ;   et al.
2009-03-12
Nitride Semiconductor Light Emitting Element and Method for Manufacturing the Same
App 20080135868 - Okagawa; Hiroaki ;   et al.
2008-06-12
Nitride Semiconductor Light-Emitting Device
App 20080048194 - Kudo; Hiromitsu ;   et al.
2008-02-28
Semiconductor base material and method of manufacturing the material
Grant 7,179,667 - Okagawa , et al. February 20, 2
2007-02-20
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
App 20070026643 - Tadatomo; Kazuyuki ;   et al.
2007-02-01
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
App 20070026644 - Tadatomo; Kazuyuki ;   et al.
2007-02-01
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
Grant 7,115,486 - Tadatomo , et al. October 3, 2
2006-10-03
GaN group semiconductor light-emitting element with concave and convex structures on the substrate and a production method thereof
Grant 7,053,420 - Tadatomo , et al. May 30, 2
2006-05-30
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
Grant 6,940,098 - Tadatomo , et al. September 6, 2
2005-09-06
Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
App 20040206299 - Tadatomo, Kazuyuki ;   et al.
2004-10-21
Method for growing GaN compound semiconductor crystal and semiconductor substrate
Grant 6,794,210 - Ouchi , et al. September 21, 2
2004-09-21
Semiconductor light-emitting device
App 20040113166 - Tadatomo, Kazuyuki ;   et al.
2004-06-17
Method for growing GaN compound semiconductor crystal and semiconductor substrate
App 20040094084 - Ouchi, Yoichiro ;   et al.
2004-05-20
Semiconductor light receiving element
Grant 6,734,515 - Tadatomo , et al. May 11, 2
2004-05-11
Multi-wavelength luminous element
App 20040056258 - Tadatomo, Kazuyuki ;   et al.
2004-03-25
Semiconductor base material and method of manufacturing the material
App 20040048471 - Okagawa, Hiroaki ;   et al.
2004-03-11
Method for growing GaN compound semiconductor crystal and semiconductor substrate
Grant 6,700,179 - Ouchi , et al. March 2, 2
2004-03-02
GAN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof
Grant 6,225,650 - Tadatomo , et al. May 1, 2
2001-05-01
GaN single crystal
Grant 5,810,925 - Tadatomo , et al. September 22, 1
1998-09-22
Group-III nitride based light emitter
Grant 5,793,061 - Ohuchi , et al. August 11, 1
1998-08-11
Gan single crystal
Grant 5,770,887 - Tadatomo , et al. June 23, 1
1998-06-23
Semiconductor light emitting element with In GaAlP active layer of specified thickness
Grant 5,710,440 - Okagawa , et al. January 20, 1
1998-01-20
Semiconductor light emitting element with reflecting layers
Grant 5,414,281 - Watabe , et al. May 9, 1
1995-05-09

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