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Semiconductor Device And Manufacturing Method Thereof
App 20150263117 - KATO; Koichi ; et al. | 2015-09-17 |
Memory Device And Method Of Manufacture Thereof
App 20130221422 - NODA; Mitsuhiko ; et al. | 2013-08-29 |
Silicidation Of Device Contacts Using Pre-amorphization Implant Of Semiconductor Substrate
App 20130049199 - Besser; Paul R. ; et al. | 2013-02-28 |
Silicidation Of Device Contacts Using Pre-amorphization Implant Of Semiconductor Substrate
App 20130049200 - Besser; Paul R. ; et al. | 2013-02-28 |
Specific Contact Resistivity Measurement Method, Semiconductor Device For Specific Contact Resistivity Measurement, And Method For Manufacturing The Same
App 20120242356 - Ohuchi; Kazuya ; et al. | 2012-09-27 |
Semiconductor device and method of manufacturing the same
Grant 7,902,612 - Yamauchi , et al. March 8, 2 | 2011-03-08 |
Semiconductor device including a silicide layer and a dielectric layer
Grant 7,875,976 - Wada , et al. January 25, 2 | 2011-01-25 |
Semiconductor Device And Method Of Manufacturing The Same
App 20090008727 - YAMAUCHI; Takashi ; et al. | 2009-01-08 |
Method of manufacturing silicide layer for semiconductor device
Grant 7,456,096 - Yamauchi , et al. November 25, 2 | 2008-11-25 |
Semiconductor Device And Manufacturing Method Of Semiconductor Device
App 20080088021 - WADA; Makoto ; et al. | 2008-04-17 |
Semiconductor Device And Method Of Manufacturing The Same
App 20070141836 - Yamauchi; Takashi ; et al. | 2007-06-21 |
Method of manufacturing a semiconductor device having a silicide film
Grant 7,183,168 - Matsuda , et al. February 27, 2 | 2007-02-27 |
Method of manufacturing a semiconductor device having a gate electrode containing polycrystalline silicon-germanium
Grant 7,148,096 - Ohuchi December 12, 2 | 2006-12-12 |
Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the same
Grant 7,141,467 - Hokazono , et al. November 28, 2 | 2006-11-28 |
Semiconductor device containing distorted silicon layer formed on silicon germanium layer
App 20050282324 - Ohuchi, Kazuya | 2005-12-22 |
Semiconductor device having gate electrode of staked structure including polysilicon layer and metal layer and method of manufacturing the same
App 20050189600 - Ohuchi, Kazuya ; et al. | 2005-09-01 |
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same
Grant 6,897,534 - Ohuchi , et al. May 24, 2 | 2005-05-24 |
Method of manufacturing a semiconductor device having a silicide film
App 20050106801 - Matsuda, Satoshi ; et al. | 2005-05-19 |
Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same
Grant 6,891,232 - Miyano , et al. May 10, 2 | 2005-05-10 |
Semiconductor device and method of manufacturing the same
Grant 6,878,579 - Ohuchi , et al. April 12, 2 | 2005-04-12 |
Semiconductor device and method of manufacturing a semiconductor device
App 20050035413 - Miyano, Kiyotaka ; et al. | 2005-02-17 |
Semiconductor device and method of manufacturing the same
App 20050012088 - Ohuchi, Kazuya ; et al. | 2005-01-20 |
Method of manufacturing a semiconductor device having a silicide film
Grant 6,841,429 - Matsuda , et al. January 11, 2 | 2005-01-11 |
Semiconductor device and method of manufacturing the same
App 20040214386 - Ohuchi, Kazuya | 2004-10-28 |
Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the same
App 20040183146 - Hokazono, Akira ; et al. | 2004-09-23 |
Semiconductor device and method of manufacturing the same
Grant 6,791,106 - Ohuchi , et al. September 14, 2 | 2004-09-14 |
Semiconductor device and method of manufacturing the same
Grant 6,762,468 - Ohuchi July 13, 2 | 2004-07-13 |
Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same
Grant 6,744,104 - Aoki , et al. June 1, 2 | 2004-06-01 |
Semiconductor device having silicide film and manufacturing method thereof
App 20040102012 - Matsuda, Satoshi ; et al. | 2004-05-27 |
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same
App 20040041213 - Ohuchi, Kazuya ; et al. | 2004-03-04 |
Semiconductor device having silicide film
Grant 6,677,660 - Matsuda , et al. January 13, 2 | 2004-01-13 |
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same
Grant 6,642,585 - Ohuchi , et al. November 4, 2 | 2003-11-04 |
Semiconductor device and method of manufacturing the same
App 20030201493 - Ohuchi, Kazuya ; et al. | 2003-10-30 |
Semiconductor device and method of manufacturing a semiconductor device
App 20030141549 - Miyano, Kiyotaka ; et al. | 2003-07-31 |
Semiconductor device and method of manufacturing the same
App 20030116781 - Ohuchi, Kazuya | 2003-06-26 |
MOS semiconductor device having gate insulating film containing nitrogen and method of manufacturing the same
App 20030119235 - Ohuchi, Kazuya | 2003-06-26 |
Semiconductor device having MIS field effect transistors or three-dimensional structure
Grant 6,525,403 - Inaba , et al. February 25, 2 | 2003-02-25 |
Semiconductor device having MIS field effect transistors or three-dimensional structure
App 20020036290 - Inaba, Satoshi ; et al. | 2002-03-28 |
Semiconductor Device Having Gate Electrode Of Stacked Structure Including Polysilicon Layer And Metal Layer And Method Of Manufacturing The Same
App 20020030234 - OHUCHI, KAZUYA ; et al. | 2002-03-14 |
Semiconductor device and manufacturing method therefor
Grant 5,734,181 - Ohba , et al. March 31, 1 | 1998-03-31 |
High-speed semiconductor gain memory cell with minimal area occupancy
Grant 5,463,234 - Toriumi , et al. October 31, 1 | 1995-10-31 |
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