Ohno; Takio

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ohno; Takio.The latest application filed is for "capture of residual refractory metal within semiconductor device".

Company Profile

0.6.4

Ohno; Takio - Tokyo JP
Ohno, Takio - Hyogo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Capture of residual refractory metal within semiconductor device App 20080272461 - Kamino; Takeshi ; et al.	2008-11-06
Capture of residual refractory metal within semiconductor device Grant 7,408,239 - Kamino , et al. August 5, 2	2008-08-05
Capture of residual refractory metal within semiconductor device App 20070114666 - Kamino; Takeshi ; et al.	2007-05-24
Capture of residual refractory metal within semiconductor device Grant 7,180,153 - Kamino , et al. February 20, 2	2007-02-20
Method of manufacturing semiconductor device App 20040219753 - Ohno, Takio	2004-11-04
Semiconductor device having improved trench structure Grant 6,777,772 - Taya , et al. August 17, 2	2004-08-17
Semiconductor device App 20020140097 - Kamino, Takeshi ; et al.	2002-10-03
Semiconductor device and method of fabricating the same Grant 6,069,400 - Kimura , et al. May 30, 2	2000-05-30
Semiconductor integrated circuit device having static memory cell with CMOS structure Grant 5,880,503 - Matsumoto , et al. March 9, 1	1999-03-09
Semiconductor device including a local interconnection between an interconnection layer and an adjoining impurity region Grant 5,621,232 - Ohno April 15, 1	1997-04-15

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