Ohnishi; Sadayuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ohnishi; Sadayuki.The latest application filed is for "semiconductor device".

Company Profile

0.12.12

Ohnishi; Sadayuki - Hitachinaka JP
OHNISHI; Sadayuki - Hitachinaka-shi JP
Ohnishi; Sadayuki - Kawasaki JP
Ohnishi; Sadayuki - Kanagawa JP
Ohnishi; Sadayuki - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device Grant 10,153,274 - Ohnishi Dec	2018-12-11
Semiconductor Device App 20170236818 - OHNISHI; Sadayuki	2017-08-17
Semiconductor device Grant 9,660,061 - Ohnishi May 23, 2	2017-05-23
Semiconductor Device App 20160240633 - OHNISHI; SADAYUKI	2016-08-18
Method of fabricating a semiconductor device Grant 8,598,044 - Usami , et al. December 3, 2	2013-12-03
Method for manufacturing a semiconductor device having a multi-layered insulating structure of SiOCH layers and an SiO.sub.2 layer Grant 7,833,901 - Ohto , et al. November 16, 2	2010-11-16
Carbon containing silicon oxide film having high ashing tolerance and adhesion Grant 7,582,970 - Ohnishi , et al. September 1, 2	2009-09-01
Manufacturing method of semiconductor device Grant 7,563,705 - Tonegawa , et al. July 21, 2	2009-07-21
Carbon Containing Silicon Oxide Film Having High Ashing Tolerance And Adhesion App 20080290522 - Ohnishi; Sadayuki ; et al.	2008-11-27
Carbon containing silicon oxide film having high ashing tolerance and adhesion Grant 7,420,279 - Ohnishi , et al. September 2, 2	2008-09-02
Semiconductor device, and production method for manufacturing such semiconductor device App 20070045861 - Ohto; Koichi ; et al.	2007-03-01
Carbon containing silicon oxide film having high ashing tolerance and adhesion App 20060255466 - Ohnishi; Sadayuki ; et al.	2006-11-16
Semiconductor device having two distinct sioch layers Grant 7,132,732 - Ohto , et al. November 7, 2	2006-11-07
Method of fabricating a semiconductor device App 20060216946 - Usami; Tatsuya ; et al.	2006-09-28
Carbon containing silicon oxide film having high ashing tolerance and adhesion Grant 7,102,236 - Ohnishi , et al. September 5, 2	2006-09-05
Method of fabricating semiconductor device using plasma-enhanced CVD Grant 7,074,698 - Morita , et al. July 11, 2	2006-07-11
Manufacturing method of semiconductor device App 20060141778 - Tonegawa; Takashi ; et al.	2006-06-29
Carbon containing silicon oxide film having high ashing tolerance and adhesion App 20050006665 - Ohnishi, Sadayuki ; et al.	2005-01-13
Semiconductor device, and production method for manufacturing such semiconductor device App 20040183162 - Ohto, Koichi ; et al.	2004-09-23
Method of fabricating semiconductor device using Plasma-Enhanced CVD App 20040185668 - Morita, Noboru ; et al.	2004-09-23
Semiconductor device and manufacturing method thereof App 20040041269 - Ohnishi, Sadayuki	2004-03-04
Manufacturing method of semiconductor device App 20030155657 - Tonegawa, Takashi ; et al.	2003-08-21
Method of producing semiconductor device with insulating film having at least silicon nitride film Grant 5,397,748 - Watanabe , et al. March 14, 1	1995-03-14

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