Ohnishi; Kazuhiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ohnishi; Kazuhiro.The latest application filed is for "semiconductor device for surge protection".

Company Profile

0.11.14

Ohnishi; Kazuhiro - Osaka JP
Ohnishi; Kazuhiro - Hachiohji JP
Ohnishi; Kazuhiro - Kodaira JP
Ohnishi, Kazuhiro - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device for surge protection Grant 8,004,041 - Ohnishi August 23, 2	2011-08-23
Semiconductor Device For Surge Protection App 20090034143 - Ohnishi; Kazuhiro	2009-02-05
Semiconductor device and process of producing the same Grant 7,238,582 - Shimamoto , et al. July 3, 2	2007-07-03
Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region Grant 7,042,051 - Ootsuka , et al. May 9, 2	2006-05-09
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Grant 7,029,988 - Ohnishi , et al. April 18, 2	2006-04-18
Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same Grant 6,936,875 - Sugii , et al. August 30, 2	2005-08-30
Semiconductor device and manufacturing method of the same App 20050173738 - Kondo, Masao ; et al.	2005-08-11
Semiconductor device and process for producing the same App 20050164441 - Ohnishi, Kazuhiro ; et al.	2005-07-28
Semiconductor device and process of producing the same App 20050101097 - Shimamoto, Hiromi ; et al.	2005-05-12
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Grant 6,878,606 - Ohnishi , et al. April 12, 2	2005-04-12
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium App 20050032327 - Ohnishi, Kazuhiro ; et al.	2005-02-10
Semiconductor device and process of producing the same Grant 6,835,632 - Shimamoto , et al. December 28, 2	2004-12-28
Semiconductor device and process for producing the same App 20040178440 - Ohnishi, Kazuhiro ; et al.	2004-09-16
Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium App 20040121554 - Ohnishi, Kazuhiro ; et al.	2004-06-24
Stacked gate electrode for a MOS transistor of a semiconductor device Grant 6,750,503 - Ohnishi , et al. June 15, 2	2004-06-15
Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same App 20040108559 - Sugii, Nobuyuki ; et al.	2004-06-10
Semiconductor device and method of fabricating the same App 20030227062 - Horiuchi, Masatada ; et al.	2003-12-11
Semiconductor device and process of producing the same App 20030207544 - Shimamoto, Hiromi ; et al.	2003-11-06
Semiconductor device and process of producing the same Grant 6,610,569 - Shimamoto , et al. August 26, 2	2003-08-26
Semiconductor device and a method of manufacturing the same App 20030094627 - Ootsuka, Fumio ; et al.	2003-05-22
Method of manufacturing a semiconductor device having two peaks in an impurity concentration distribution Grant 6,524,903 - Ootsuka , et al. February 25, 2	2003-02-25
Insulated gate field effect transistor and manufacturing thereof App 20030008462 - Horiuchi, Masatada ; et al.	2003-01-09
Semiconductor device and a method of manufacturing the same App 20020043665 - OOtsuka, Fumio ; et al.	2002-04-18
Semiconductor device and process for producing the same App 20010030342 - Ohnishi, Kazuhiro ; et al.	2001-10-18
Semiconductor device having conducting structure Grant 5,793,097 - Shimamoto , et al. August 11, 1	1998-08-11

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