Ohji; Yuzuru

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ohji; Yuzuru.The latest application filed is for "semiconductor device with adhesion-improvement capacitor and process for producing the device".

Company Profile

0.13.8

Ohji; Yuzuru - Hinode JP
Ohji; Yuzuru - Hinode-machi JP
Ohji; Yuzuru - Hinodemachi JP
Ohji, Yuzuru - Tokyo JP
Ohji; Yuzuru - Nishitama JP
Ohji; Yuzuru - Hachioji JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor memory with strongly adhesive electrode Grant 6,927,439 - Moriya , et al. August 9, 2	2005-08-09
Method of manufacturing a semiconductor device to provide a plurality of test element groups (TEGs) in a scribe region Grant 6,881,597 - Asayama , et al. April 19, 2	2005-04-19
Semiconductor device with adhesion-improvement capacitor and process for producing the device App 20050024811 - Moriya, Hiroshi ; et al.	2005-02-03
Semiconductor device with adhesion-improvement capacitor and process for producing the device Grant 6,781,172 - Moriya , et al. August 24, 2	2004-08-24
Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof Grant 6,756,262 - Nakamura , et al. June 29, 2	2004-06-29
Capacitor Structure And A Semiconductor Device With A First Metal Layer, A Second Metal Silicide Layer Formed Over The First Metal Layer And A Second Metal Layer Formed Over The Second Metal Silicide Layer Grant 6,720,603 - Iijima , et al. April 13, 2	2004-04-13
HSG semiconductor capacitor with migration inhibition layer Grant 6,717,202 - Sugawara , et al. April 6, 2	2004-04-06
Semiconductor integrated circuit device and method of manufacturing the same Grant 6,627,497 - Nakanishi , et al. September 30, 2	2003-09-30
Semiconductor integrated circuit device and process for manufacturing the same App 20030107073 - Iijima, Shinpei ; et al.	2003-06-12
Method Of Forming A Capacitor In A Semiconductor Integrated Circuit Device Using A Metal Silicon Nitride Layer To Protect An Underlying Metal Silicide Layer From Oxidation During Subsequent Processing Steps Grant 6,534,375 - Iijima , et al. March 18, 2	2003-03-18
Semiconductor device and method of fabricating the same App 20030038325 - Sugawara, Yasuhiro ; et al.	2003-02-27
Semiconductor device, method of measuring the same, and method of manufacturing the same App 20030006795 - Asayama, Kyoichiro ; et al.	2003-01-09
Semiconductor integrated circuit device and method of manufacturing the same App 20020149044 - Nakanishi, Naruhiko ; et al.	2002-10-17
Method of manufacturing a semiconductor integrated circuit Grant 6,451,665 - Yunogami , et al. September 17, 2	2002-09-17
Semiconductor integrated circuit device Grant 6,423,992 - Fukuda , et al. July 23, 2	2002-07-23
Semiconductor integrated circuit device and process for manufacturing the same App 20020022357 - Iijima, Shinpei ; et al.	2002-02-21
Semiconductor device with adhesion-improvement capacitor and process for producing the device App 20010050389 - Moriya, Hiroshi ; et al.	2001-12-13
Semiconductor integrated circuit device App 20010022369 - Fukuda, Takuya ; et al.	2001-09-20
Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same Grant 5,499,207 - Miki , et al. March 12, 1	1996-03-12
Semiconductor device and process of producing the same Grant 5,343,353 - Miki , et al. August 30, 1	1994-08-30
Acoustic microscope Grant 4,563,900 - Harada , et al. January 14, 1	1986-01-14

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