Ohgoh; Tsuyoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ohgoh; Tsuyoshi.The latest application filed is for "method for predicting lifetime of photo-semiconductor device and drive apparatus".

Company Profile

0.6.8

Ohgoh; Tsuyoshi - Ashigarakami-gun JP
Ohgoh; Tsuyoshi - Kanagawa-ken JP
Ohgoh; Tsuyoshi - Kaisei-machi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for predicting lifetime of photo-semiconductor device and drive apparatus Grant 8,301,399 - Ohgoh October 30, 2	2012-10-30
Semiconductor light emitting device Grant 7,928,453 - Ohgoh April 19, 2	2011-04-19
Method For Predicting Lifetime Of Photo-semiconductor Device And Drive Apparatus App 20090254287 - OHGOH; Tsuyoshi	2009-10-08
Semiconductor Light Emitting Device App 20090078947 - Ohgoh; Tsuyoshi	2009-03-26
Semiconductor laser element formed on substrate having tilted crystal orientation Grant 7,366,216 - Ohgoh April 29, 2	2008-04-29
Semiconductor laser element with optical waveguide layer having increased thickness Grant 7,301,978 - Ohgoh November 27, 2	2007-11-27
Semiconductor laser having optical guide layer doped for decreasing resistance Grant 7,295,587 - Ohgoh November 13, 2	2007-11-13
Semiconductor laser having optical guide layer doped for decreasing resistance App 20060220002 - Ohgoh; Tsuyoshi	2006-10-05
Semiconductor laser and optical communication system using the same App 20060222029 - Ohgoh; Tsuyoshi	2006-10-05
Semiconductor laser element with optical waveguide layer having increased thickness App 20050195878 - Ohgoh, Tsuyoshi	2005-09-08
Semiconductor laser element formed on substrate having tilted crystal orientation App 20050185687 - Ohgoh, Tsuyoshi	2005-08-25
Semiconductor laser device Grant 6,856,636 - Ohgoh , et al. February 15, 2	2005-02-15
Semiconductor laser device App 20030039289 - Ohgoh, Tsuyoshi ; et al.	2003-02-27
Semiconductor laser device having inGaAs compressive-strain active layer, GaAsP tensile-strain barrier layers, and InGaP optical waveguide layers App 20020122447 - Fukunaga, Toshiaki ; et al.	2002-09-05

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.