OH; Sangmun

Patent Applications and Registrations

Patent applications and USPTO patent grants for OH; Sangmun.The latest application filed is for "spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head".

Company Profile

5.17.7

OH; Sangmun - San Jose CA
OH; Sangmun - Palo Alto CA
Oh; Sangmun - Fremont CA
- San Jose CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Spin-Torque Oscillator With Multilayer Seed Layer Between The Write Pole And The Free Layer In A Magnetic Recording Write Head App 20210233560 - FREITAG; James Mac ; et al.	2021-07-29
Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head Grant 10,997,993 - Freitag , et al. May 4, 2	2021-05-04
Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layers Grant 10,867,625 - Freitag , et al. December 15, 2	2020-12-15
Spin transfer torque (STT) device with template layer for heusler alloy magnetic layers Grant 10,566,015 - Freitag , et al. Feb	2020-02-18
Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head Grant 10,460,752 - Freitag , et al. Oc	2019-10-29
Spin-torque Oscillator With Multilayer Seed Layer Between The Write Pole And The Free Layer In A Magnetic Recording Write Head App 20190279668 - FREITAG; James Mac ; et al.	2019-09-12
Spin Transfer Torque (stt) Device With Template Layer For Heusler Alloy Magnetic Layers App 20190279667 - FREITAG; JAMES MAC ; et al.	2019-09-12
Tunnel magnetoresistance magnetic sensor with scissor sensor and multi-seed layer configuration Grant 9,940,955 - Nishioka , et al. April 10, 2	2018-04-10
Tmr Read Head With Scissors Sensor App 20170154643 - Nishioka; Kouichi ; et al.	2017-06-01
Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy Grant 9,337,415 - Oh , et al. May 10, 2	2016-05-10
Method and system for providing a magnetic transducer having improved shield-to-shield spacing Grant 9,214,168 - Park , et al. December 15, 2	2015-12-15
Tunneling magnetoresistive (TMR) device with magnesium oxide tunneling barrier layer and free layer having insertion layer Grant 9,177,573 - Oh , et al. November 3, 2	2015-11-03
Tunneling magnetoresistive (TMR) read head with reduced gap thickness Grant 9,177,575 - Gao , et al. November 3, 2	2015-11-03
Capping Materials For Magnetic Read Head Sensor App 20150062759 - PARK; Chando ; et al.	2015-03-05
Capping materials for magnetic read head sensor Grant 8,958,180 - Park , et al. February 17, 2	2015-02-17
Interlayer Coupled Free Layer With Out Of Plane Magnetic Orientation For Magnetic Read Head App 20140355152 - Park; Chando ; et al.	2014-12-04
Method and system for providing an improved sensor stack for a recording head Grant 8,755,152 - Park , et al. June 17, 2	2014-06-17
Magnetic tunnel junction with barrier cooling for magnetic read head Grant 08619394 -	2013-12-31
Magnetic tunnel junction with barrier cooling for magnetic read head Grant 8,619,394 - Park , et al. December 31, 2	2013-12-31
Method and system for providing a magnetic transducer having improved shield-to-shield spacing Grant 8,537,502 - Park , et al. September 17, 2	2013-09-17
Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same Grant 8,427,791 - Gao , et al. April 23, 2	2013-04-23
Magnetic Tunnel Junction Having A Magnetic Insertion Layer And Methods Of Producing The Same App 20120127603 - Gao; Zheng ; et al.	2012-05-24

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