| Patent | Date |
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Semiconductor Device Including Isolation Layers And Method Of Manufacturing The Same
App 20210384068 - SUK; SUNG DAE ; et al. | 2021-12-09 |
Semiconductor device including isolation layers and method of manufacturing the same
Grant 11,101,166 - Suk , et al. August 24, 2 | 2021-08-24 |
Semiconductor Device Including Isolation Layers And Method Of Manufacturing The Same
App 20200328107 - SUK; SUNG DAE ; et al. | 2020-10-15 |
Semiconductor device including isolation layers and method of manufacturing the same
Grant 10,734,273 - Suk , et al. | 2020-08-04 |
Integrated circuit device
Grant 10,396,205 - Kim , et al. A | 2019-08-27 |
Semiconductor Device Including Isolation Layers And Method Of Manufacturing The Same
App 20190229011 - SUK; Sung Dae ; et al. | 2019-07-25 |
Integrated Circuit Device
App 20190097054 - KIM; Mun-hyeon ; et al. | 2019-03-28 |
Elevated source drain semiconductor device with L-shaped spacers and fabricating method thereof
Grant 9,831,240 - Park , et al. November 28, 2 | 2017-11-28 |
Semiconductor Device Having First And Second Gate Electrodes And Method Of Manufacturing The Same
App 20170077097 - DONG; YAOQI ; et al. | 2017-03-16 |
Semiconductor device having first and second gate electrodes and method of manufacturing the same
Grant 9,576,959 - Dong , et al. February 21, 2 | 2017-02-21 |
Semiconductor Devices and Methods for Fabricating the Same
App 20150097250 - CHEON; Keon-Yong ; et al. | 2015-04-09 |
Semiconductor Device And Fabricating Method Thereof
App 20150014788 - Park; Min-Yeop ; et al. | 2015-01-15 |
Semiconductor device having MOS varactor and methods for fabricating the same
Grant 7,611,956 - Kim , et al. November 3, 2 | 2009-11-03 |
Semiconductor Device Having Mos Varactor And Methods For Fabricating The Same
App 20080081426 - Kim; Dae-Hyun ; et al. | 2008-04-03 |
Semiconductor device having MOS varactor and methods for fabricating the same
Grant 7,307,335 - Kim , et al. December 11, 2 | 2007-12-11 |
Capacitor, semiconductor device including the capacitor and methods of fabricating the same
App 20070085165 - Oh; Han-Su ; et al. | 2007-04-19 |
MOS transistor having a mesh-type gate electrode
Grant 7,078,775 - Yi , et al. July 18, 2 | 2006-07-18 |
Method of fabricating local interconnection using selective epitaxial growth
Grant 7,049,218 - Choi , et al. May 23, 2 | 2006-05-23 |
Semiconductor device having MOS varactor and methods for fabricating the same
App 20050179113 - Kim, Dae-Hyun ; et al. | 2005-08-18 |
Method of fabricating local interconnection using selective epitaxial growth
App 20040209454 - Choi, Jin-ho ; et al. | 2004-10-21 |
MOS trasistor having a mesh-type gate electrode
App 20040206983 - Yi, Duk-min ; et al. | 2004-10-21 |
Method for manufacturing a high power semiconductor device having a field plate extendedly disposed on a gate
Grant 6,613,633 - Oh September 2, 2 | 2003-09-02 |
High power semiconductor device and fabrication method thereof
App 20020182810 - Oh, Han-Su | 2002-12-05 |
Semiconductor device with drift layer
Grant 6,476,457 - Oh November 5, 2 | 2002-11-05 |
Semiconductor device and fabrication method thereof
App 20010000288 - Oh, Han Su | 2001-04-19 |
Semiconductor device and fabrication method thereof
Grant 6,177,321 - Oh January 23, 2 | 2001-01-23 |
EEPROM cell and related method of making thereof
Grant 5,953,602 - Oh , et al. September 14, 1 | 1999-09-14 |
EEPROM cell having improved topology and reduced leakage current
Grant 5,736,765 - Oh , et al. April 7, 1 | 1998-04-07 |
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