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Patent applications and USPTO patent grants for Ogishima, Atushi.The latest application filed is for "semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof".
Patent | Date |
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Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof App 20010023958 - Todorobaru, Hiromi ;   et al. | 2001-09-27 |
Semiconductor integrated circuit device and process for manufacturing the same App 20010019180 - Aoyagi, Takashi ;   et al. | 2001-09-06 |
Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof Grant 6,031,288 - Todorobaru , et al. February 29, 2 | 2000-02-29 |
Method of making a semiconductor memory circuit device Grant 5,389,558 - Suwanai , et al. February 14, 1 | 1995-02-14 |
Semiconductor memory circuit device and method for fabricating same Grant 5,237,187 - Suwanai , et al. August 17, 1 | 1993-08-17 |
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