Ogirima; Masahiko
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ogirima; Masahiko.The latest application filed is for "semiconductor device having a pn junction formed on an insulator film".
- Ogirima; Masahiko - Tokyo JP
- Ogirima; Masahiko - Shinjuku JP
- Ogirima; Masahiko - Shinjyuku JA
| Patent | Date |
|---|---|
| Semiconductor device having a PN junction formed on an insulator film Grant 4,819,055 - Nakazato , et al. April 4, 1 | 1989-04-04 |
| Method of forming electrode of semiconductor device Grant 4,458,410 - Sugaki , et al. July 10, 1 | 1984-07-10 |
| Semiconductor substrate and a manufacturing method thereof Grant 4,276,114 - Takano , et al. June 30, 1 | 1981-06-30 |
| Germanium-containing silicon nitride film Grant 4,126,880 - Tamaki , et al. November 21, 1 | 1978-11-21 |
| Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x compound semiconductor Grant 4,007,074 - Ogirima , et al. February 8, 1 | 1977-02-08 |
| Epitaxial growth device Grant 4,000,716 - Kurata , et al. January 4, 1 | 1977-01-04 |
| Method for making III-V compound semiconductor devices Grant 3,861,969 - Ono , et al. January 21, 1 | 1975-01-21 |
| Method Of Preventing Autodoping During The Epitaxial Growth Of Compound Semiconductors From The Vapor Phase Grant 3,769,104 - Ono , et al. October 30, 1 | 1973-10-30 |
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