| Patent | Date |
|---|
Light source unit, projector, and method of assembling a light source unit
Grant 10,247,405 - Fujikura , et al. | 2019-04-02 |
Light Source Unit, Projector, And Method Of Assembling A Light Source Unit
App 20180231232 - FUJIKURA; Hirofumi ; et al. | 2018-08-16 |
Charge pump circuit and step-down regulator circuit
Grant 9,929,646 - Notoya , et al. March 27, 2 | 2018-03-27 |
Charge Pump Circuit And Step-down Regulator Circuit
App 20170179819 - NOTOYA; Koichi ; et al. | 2017-06-22 |
Projector, support plate and projection method of projector
Grant 9,513,538 - Ogawa December 6, 2 | 2016-12-06 |
Projector, Support Plate And Projection Method Of Projector
App 20140354964 - OGAWA; Kyosuke | 2014-12-04 |
Photo-mask having phase and non-phase shifter parts for patterning an insulated gate transistor
Grant 7,867,671 - Douzaka , et al. January 11, 2 | 2011-01-11 |
Photomask, Multiphase Exposure Method, And Method Of Manufacturing Semiconductor Device Including Insulating Gate-type Transistors
App 20080107974 - DOUZAKA; Toshiaki ; et al. | 2008-05-08 |
Process for forming deposition film
Grant 5,910,342 - Hirooka , et al. June 8, 1 | 1999-06-08 |
Process for forming deposition film
Grant 4,835,005 - Hirooka , et al. May 30, 1 | 1989-05-30 |
Light receiving members with spherically dimpled support
Grant 4,808,504 - Honda , et al. * February 28, 1 | 1989-02-28 |
Light receiving members with spherically dimpled support
Grant 4,798,776 - Honda , et al. * January 17, 1 | 1989-01-17 |
Light receiving member having a-Si(GE,SN) photosensitive layer and multi-layered surface layer containing reflection preventive layer and abrasion resistant layer on a support having spherical dimples with inside faces having minute irregularities
Grant 4,797,336 - Honda , et al. January 10, 1 | 1989-01-10 |
Surface treated metal member, preparation method thereof and photoconductive member by use thereof
Grant 4,797,327 - Honda , et al. January 10, 1 | 1989-01-10 |
Light receiving member having a-Si (Ge,Sn) photosensitive layer and a-Si (O,C,N) surface layer on a support having spherical dimples with inside faces having minute irregularities
Grant 4,797,299 - Honda , et al. January 10, 1 | 1989-01-10 |
Amorphous silicon multilayered photosensitive element containing spherical-dimpled substrate surface
Grant 4,740,440 - Honda , et al. April 26, 1 | 1988-04-26 |
Surface treated metal member, preparation method thereof and photoconductive member by use thereof
Grant 4,735,883 - Honda , et al. April 5, 1 | 1988-04-05 |
Light receiving members
Grant 4,732,834 - Honda , et al. March 22, 1 | 1988-03-22 |
Silicon film deposition from mixture of silanes
Grant 4,721,664 - Shimizu , et al. January 26, 1 | 1988-01-26 |
Member with light receiving layer of A-SI(GE) and A-SI and having plurality of non-parallel interfaces
Grant 4,701,393 - Saitoh , et al. October 20, 1 | 1987-10-20 |
Member having light receiving layer with smoothly interconnecting nonparallel interfaces
Grant 4,696,882 - Saitoh , et al. September 29, 1 | 1987-09-29 |
Image holder member with overlayer of amorphous Si with H and C
Grant 4,687,722 - Ogawa August 18, 1 | 1987-08-18 |
Apparatus and process for mass production of film by vacuum deposition
Grant 4,666,734 - Kamiya , et al. May 19, 1 | 1987-05-19 |
Light receiving member having photosensitive layer with non-parallel interfaces
Grant 4,650,736 - Saitoh , et al. March 17, 1 | 1987-03-17 |
Photoconductive member having amorphous silicon matrix with oxygen and impurity containing regions
Grant 4,636,450 - Ogawa , et al. January 13, 1 | 1987-01-13 |
Photoconductive member comprising silicon and oxygen
Grant 4,547,448 - Shirai , et al. October 15, 1 | 1985-10-15 |
Photoconductive member having multiple amorphous layers
Grant 4,536,459 - Misumi , et al. August 20, 1 | 1985-08-20 |
Amorphous silicon photoconductive member with interface and rectifying layers
Grant 4,522,905 - Ogawa , et al. June 11, 1 | 1985-06-11 |
Photoconductive member having an amorphous silicon layer
Grant 4,501,807 - Shirai , et al. February 26, 1 | 1985-02-26 |
Photoconductive member comprising multiple amorphous layers
Grant 4,490,454 - Misumi , et al. December 25, 1 | 1984-12-25 |
Photoconductive member with doped and oxygen containing amorphous silicon layers
Grant 4,486,521 - Misumi , et al. December 4, 1 | 1984-12-04 |
Process for producing photoconductive member from gaseous silicon compounds
Grant 4,468,443 - Shimizu , et al. August 28, 1 | 1984-08-28 |
Photoconductive member with a -Si having two layer regions
Grant 4,465,750 - Ogawa , et al. August 14, 1 | 1984-08-14 |
Photoconductive member with .alpha.-Si and C, N or O and dopant
Grant 4,460,670 - Ogawa , et al. July 17, 1 | 1984-07-17 |
Photoconductive member with .alpha.-Si and C, U or D and dopant
Grant 4,460,669 - Ogawa , et al. July 17, 1 | 1984-07-17 |
Amorphous photoconductive member with .alpha.-Si interlayers
Grant 4,452,875 - Ogawa , et al. June 5, 1 | 1984-06-05 |
Photoconductive member with multiple amorphous Si layers
Grant 4,452,874 - Ogawa , et al. June 5, 1 | 1984-06-05 |
Process for forming amorphous silicon film
Grant 4,450,185 - Shimizu , et al. May 22, 1 | 1984-05-22 |
Process for producing photoconductive member
Grant 4,405,656 - Shimizu , et al. September 20, 1 | 1983-09-20 |
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