Ogane; Junichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ogane; Junichi.The latest application filed is for "semiconductor memory device having high stability and quality of readout operation".

Company Profile

0.5.6

Ogane; Junichi - Tokyo JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor memory device having high stability and quality of readout operation Grant 7,885,136 - Matsui , et al. February 8, 2	2011-02-08
Semiconductor Memory Device Having High Stability And Quality Of Readout Operation App 20090245002 - Matsui; Katsuaki ; et al.	2009-10-01
Voltage translator circuit and semiconductor memory device Grant 7,317,334 - Ogane January 8, 2	2008-01-08
Non-volatile memory device Grant 7,038,944 - Ogane May 2, 2	2006-05-02
Non-volatile Memory Device App 20060007740 - Ogane; Junichi	2006-01-12
Word-line driving circuit with reduced current leakage Grant 6,621,743 - Ogane September 16, 2	2003-09-16
Voltage Translator Circuit And Semiconductor Memory Device App 20030071656 - Ogane, Junichi	2003-04-17
Word-line driving circuit with reduced current leakage App 20030039143 - Ogane, Junichi	2003-02-27
Semiconductor memory device having driver circuit which supplies temporary acceleratedcharge App 20020041530 - Ogane, Junichi	2002-04-11
Nonvolatile semiconductor memory device having a hierarchial bit line structure App 20020015329 - Ogane, Junichi	2002-02-07
Non-volatile memory device readable write data latch, and internal control thereof Grant 6,104,635 - Ogane August 15, 2	2000-08-15

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