| Patent | Date |
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Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20210313467 - SAYAMA; Hirokazu ; et al. | 2021-10-07 |
Semiconductor Device And Manufacturing Method Of The Same
App 20200343268 - TSUNOMURA; Takaaki ; et al. | 2020-10-29 |
Semiconductor device and manufacturing method of the same
Grant 10,756,115 - Tsunomura , et al. A | 2020-08-25 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The
App 20200227557 - SAYAMA; Hirokazu ; et al. | 2020-07-16 |
Semiconductor Device And Manufacturing Method Of The Same
App 20200066757 - TSUNOMURA; Takaaki ; et al. | 2020-02-27 |
Semiconductor device and manufacturing method of the same
Grant 10,510,775 - Tsunomura , et al. Dec | 2019-12-17 |
Semiconductor device and method of manufacturing the same
Grant 10,121,705 - Shinohara , et al. November 6, 2 | 2018-11-06 |
Semiconductor device and manufacturing method of the same
Grant 10,050,122 - Oda August 14, 2 | 2018-08-14 |
Semiconductor device having a field effect transistor formed on a silicon-on-insulator substrate and manufacturing method thereof
Grant 9,966,452 - Oda May 8, 2 | 2018-05-08 |
Semiconductor device and manufacturing method of the same
Grant 9,935,125 - Tsunomura , et al. April 3, 2 | 2018-04-03 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20180069119 - SAYAMA; Hirokazu ; et al. | 2018-03-08 |
Semiconductor Device And Manufacturing Method Of The Same
App 20180019260 - TSUNOMURA; Takaaki ; et al. | 2018-01-18 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,847,417 - Sayama , et al. December 19, 2 | 2017-12-19 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20170104099 - SAYAMA; Hirokazu ; et al. | 2017-04-13 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,614,081 - Sayama , et al. April 4, 2 | 2017-04-04 |
Semiconductor Device And Manufacturing Method Of The Same
App 20170047403 - ODA; Hidekazu | 2017-02-16 |
Semiconductor Device And Manufacturing Method Of The Same
App 20170040226 - ODA; Hidekazu | 2017-02-09 |
Semiconductor device and manufacturing method of the same
Grant 9,508,598 - Oda November 29, 2 | 2016-11-29 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20160315192 - SAYAMA; Hirokazu ; et al. | 2016-10-27 |
Semiconductor device and method of manufacturing the same
Grant 9,443,870 - Shinohara , et al. September 13, 2 | 2016-09-13 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,412,867 - Sayama , et al. August 9, 2 | 2016-08-09 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 9,349,816 - Ota , et al. May 24, 2 | 2016-05-24 |
Semiconductor Device And Manufacturing Method Thereof
App 20160087069 - ODA; Hidekazu | 2016-03-24 |
Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device
Grant 9,287,259 - Shinohara , et al. March 15, 2 | 2016-03-15 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20160056289 - SAYAMA; Hirokazu ; et al. | 2016-02-25 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20160056254 - OTA; Kazunobu ; et al. | 2016-02-25 |
Semiconductor Device And Method Of Manufacturing The Same
App 20160005765 - SHINOHARA; Hirofumi ; et al. | 2016-01-07 |
Semiconductor Device And Manufacturing Method Of The Same
App 20150364490 - ODA; Hidekazu | 2015-12-17 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 9,214,464 - Ota , et al. December 15, 2 | 2015-12-15 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 9,209,191 - Sayama , et al. December 8, 2 | 2015-12-08 |
Semiconductor device and method of manufacturing the same
Grant 9,184,053 - Shinohara , et al. November 10, 2 | 2015-11-10 |
Semiconductor device and method of manufacturing the same
Grant 9,166,041 - Shinohara , et al. October 20, 2 | 2015-10-20 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20150194428 - OTA; Kazunobu ; et al. | 2015-07-09 |
Semiconductor Device and Method of Manufacturing the Same
App 20150137239 - Shinohara; Hirofumi ; et al. | 2015-05-21 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,987,081 - Ota , et al. March 24, 2 | 2015-03-24 |
Semiconductor Device And Method Of Manufacturing The Same
App 20150061006 - SHINOHARA; Hirofumi ; et al. | 2015-03-05 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20140377920 - OTA; Kazunobu ; et al. | 2014-12-25 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20140322878 - SAYAMA; Hirokazu ; et al. | 2014-10-30 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,859,360 - Ota , et al. October 14, 2 | 2014-10-14 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 8,809,186 - Sayama , et al. August 19, 2 | 2014-08-19 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20140113418 - Ota; Kazunobu ; et al. | 2014-04-24 |
Semiconductor Integrated Circuit Device And Method For Manufacturing Semiconductor Integrated Circuit Device
App 20140035055 - Shinohara; Hirofumi ; et al. | 2014-02-06 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,642,418 - Ota , et al. February 4, 2 | 2014-02-04 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20140024194 - SAYAMA; Hirokazu ; et al. | 2014-01-23 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20130330890 - OTA; Kazunobu ; et al. | 2013-12-12 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 8,586,475 - Sayama , et al. November 19, 2 | 2013-11-19 |
Semiconductor Device And Manufacturing Method Of The Same
App 20130264644 - Tsunomura; Takaaki ; et al. | 2013-10-10 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,541,272 - Ota , et al. September 24, 2 | 2013-09-24 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20130203223 - OTA; Kazunobu ; et al. | 2013-08-08 |
Semiconductor Device And Method Of Manufacturing The Same
App 20130175611 - Shinohara; Hirofumi ; et al. | 2013-07-11 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20130130457 - SAYAMA; Hirokazu ; et al. | 2013-05-23 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 8,415,213 - Ota , et al. April 9, 2 | 2013-04-09 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 8,372,747 - Sayama , et al. February 12, 2 | 2013-02-12 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20110275185 - OTA; Kazunobu ; et al. | 2011-11-10 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20110207312 - Sayama; Hirokazu ; et al. | 2011-08-25 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,998,802 - Ota , et al. August 16, 2 | 2011-08-16 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 7,960,281 - Sayama , et al. June 14, 2 | 2011-06-14 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20090253235 - Ota; Kazunobu ; et al. | 2009-10-08 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,563,663 - Ota , et al. July 21, 2 | 2009-07-21 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,531,402 - Ota , et al. May 12, 2 | 2009-05-12 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20090081843 - SAYAMA; Hirokazu ; et al. | 2009-03-26 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 7,470,618 - Sayama , et al. December 30, 2 | 2008-12-30 |
Semiconductor Device Which Has Mos Structure And Method Of Manufacturing The Same
App 20080308869 - ODA; Hidekazu ; et al. | 2008-12-18 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20070207578 - OTA; Kazunobu ; et al. | 2007-09-06 |
Method Of Manufacturing Semiconductor Device With Offset Sidewall Structure
App 20070202634 - OTA; Kazunobu ; et al. | 2007-08-30 |
Semiconductor Device Including Gate Electrode For Applying Tensile Stress To Silicon Substrate, And Method Of Manufacturing The Same
App 20070128816 - SAYAMA; Hirokazu ; et al. | 2007-06-07 |
Method of manufacturing semiconductor device with offset sidewall structure
Grant 7,220,637 - Ota , et al. May 22, 2 | 2007-05-22 |
Semiconductor device and method of manufacturing the same
App 20070111427 - Yamashita; Tomohiro ; et al. | 2007-05-17 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 7,183,204 - Sayama , et al. February 27, 2 | 2007-02-27 |
Heterojunction semiconductor device with element isolation structure
Grant 7,170,109 - Sugihara , et al. January 30, 2 | 2007-01-30 |
Semiconductor device which has MOS structure and method of manufacturing the same
App 20070007602 - Oda; Hidekazu ; et al. | 2007-01-11 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
App 20050202603 - Sayama, Hirokazu ; et al. | 2005-09-15 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
Grant 6,906,393 - Sayama , et al. June 14, 2 | 2005-06-14 |
Manufacturing method of semiconductor device
Grant 6,872,642 - Oda , et al. March 29, 2 | 2005-03-29 |
Semiconductor device having resistive element formed of semiconductor film
Grant 6,838,747 - Oda January 4, 2 | 2005-01-04 |
Method of manufacturing semiconductor device having gate electrode with expanded upper portion
Grant 6,835,610 - Sayama , et al. December 28, 2 | 2004-12-28 |
Semiconductor device
App 20040256634 - Sugihara, Kohei ; et al. | 2004-12-23 |
Manufacturing method of semiconductor device
App 20040101999 - Oda, Hidekazu ; et al. | 2004-05-27 |
Semiconductor device and manufacturing method thereof
Grant 6,740,939 - Sayama , et al. May 25, 2 | 2004-05-25 |
Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same
App 20040097030 - Sayama, Hirokazu ; et al. | 2004-05-20 |
Semiconductor device including a well divided into a plurality of parts by a trench
Grant 6,734,523 - Ueno , et al. May 11, 2 | 2004-05-11 |
Method of manufacturing semiconductor device having gate electrode with expanded upper portion
App 20040043549 - Sayama, Hirokazu ; et al. | 2004-03-04 |
Semiconductor device
Grant 6,600,195 - Nishida , et al. July 29, 2 | 2003-07-29 |
Method of manufacturing semiconductor device with offset sidewall structure
App 20030059983 - Ota, Kazunobu ; et al. | 2003-03-27 |
MIS transistor and manufacturing method thereof
Grant 6,521,519 - Shimizu , et al. February 18, 2 | 2003-02-18 |
Semiconductor device having a buried-channel MOS structure
Grant 6,518,623 - Oda , et al. February 11, 2 | 2003-02-11 |
Semiconductor device having resistive element formed of semiconductor film
App 20030025162 - Oda, Hidekazu | 2003-02-06 |
Semiconductor device and manufacturing method thereof
App 20020164858 - Sayama, Hirokazu ; et al. | 2002-11-07 |
Semiconductor device and method of fabricating same
App 20020158303 - Kuroi, Takashi ; et al. | 2002-10-31 |
Semiconductor Device Including A Well Divided Into A Plurality Of Parts By A Trench
App 20020149080 - UENO, SHUUICHI ; et al. | 2002-10-17 |
Mis transistor and method of fabricating the same
App 20020066935 - Shimizu, Satoshi ; et al. | 2002-06-06 |
Eeprom with high channel hot carrier injection efficiency
App 20020066934 - Kusunoki, Shigeru ; et al. | 2002-06-06 |
Semiconductor device and manufacturing method thereof
App 20020047163 - Sayama, Hirokazu ; et al. | 2002-04-25 |
Mis Transistor And Method Of Fabricating The Same
App 20020008291 - SHIMIZU, SATOSHI ; et al. | 2002-01-24 |
Semiconductor device manufacturing method
Grant 6,335,252 - Oishi , et al. January 1, 2 | 2002-01-01 |
Semiconductor device and method of fabricating the same
Grant 6,300,664 - Kuroi , et al. October 9, 2 | 2001-10-09 |
MIS transistor and manufacturing method thereof
App 20010008293 - Shimizu, Satoshi ; et al. | 2001-07-19 |
MIS transistor and manufacturing method thereof
Grant 6,239,471 - Shimizu , et al. May 29, 2 | 2001-05-29 |
Method of manufacturing MISFET
Grant 6,235,564 - Itoh , et al. May 22, 2 | 2001-05-22 |
Method of forming a layered wiring structure including titanium silicide
Grant 6,180,519 - Kuroi , et al. January 30, 2 | 2001-01-30 |
Semiconductor device with nitrogen implanted channel region
Grant 6,153,910 - Oda , et al. November 28, 2 | 2000-11-28 |
Semiconductor integrated circuit having silicided elements of short length
Grant 6,040,629 - Shimizu , et al. March 21, 2 | 2000-03-21 |
Semiconductor device with a silicide layer
Grant 5,710,438 - Oda , et al. January 20, 1 | 1998-01-20 |
Semiconductor MOSFET device having a shallow nitrogen implanted channel region
Grant 5,557,129 - Oda , et al. September 17, 1 | 1996-09-17 |
Process for manufacturing stacked semiconductor devices
Grant 4,987,092 - Kobayashi , et al. January 22, 1 | 1991-01-22 |
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