O'Loughlin; Michael John

Patent Applications and Registrations

Patent applications and USPTO patent grants for O'Loughlin; Michael John.The latest application filed is for "using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device".

Company Profile

4.16.14

O'Loughlin; Michael John - Chapel Hill NC
- Chapel Hill NC US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device Grant 10,541,306 - O'Loughlin , et al. Ja	2020-01-21
Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device Grant 10403722 -	2019-09-03
Reduction of carrot defects in silicon carbide epitaxy Grant 9,903,046 - O'Loughlin , et al. February 27, 2	2018-02-27
SiC devices with high blocking voltage terminated by a negative bevel Grant 9,349,797 - Cheng , et al. May 24, 2	2016-05-24
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures Grant 9,112,083 - Emerson , et al. August 18, 2	2015-08-18
Using A Carbon Vacancy Reduction Material To Increase Average Carrier Lifetime In A Silicon Carbide Semiconductor Device App 20140070230 - O'Loughlin; Michael John ; et al.	2014-03-13
Deposition systems and susceptor assemblies for depositing a film on a substrate Grant 8,430,960 - Sumakeris , et al. April 30, 2	2013-04-30
Sic Devices With High Blocking Voltage Terminated By A Negative Bevel App 20130026493 - Cheng; Lin ; et al.	2013-01-31
Group Iii Nitride Based Light Emitting Diode Structures With A Quantum Well And Superlattice, Group Iii Nitride Based Quantum Well Structures And Group Iii Nitride Based Superlattice Structures App 20120298955 - Emerson; David Todd ; et al.	2012-11-29
Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures Grant 8,227,268 - Emerson , et al. July 24, 2	2012-07-24
Directed Reagents To Improve Material Uniformity App 20120052660 - SUMAKERIS; Joseph John ; et al.	2012-03-01
Directed reagents to improve material uniformity Grant 8,052,794 - Sumakeris , et al. November 8, 2	2011-11-08
Reduction Of Carrot Defects In Silicon Carbide Epitaxy App 20080054412 - O'Loughlin; Michael John ; et al.	2008-03-06
Methods Of Fabricating Group Iii Nitride Based Light Emitting Diode Structures With A Quantum Well And Superlattice, Group Iii Nitride Based Quantum Well Structures And Group Iii Nitride Based Superlattice Structures App 20080038858 - Emerson; David Todd ; et al.	2008-02-14
Group III nitride based superlattice structures Grant 7,312,474 - Emerson , et al. December 25, 2	2007-12-25
Reduction of carrot defects in silicon carbide epitaxy Grant 7,230,274 - O'Loughlin , et al. June 12, 2	2007-06-12
Reduction Of Carrot Defects In Silicon Carbide Epitaxy App 20070108450 - O'Loughlin; Michael John ; et al.	2007-05-17
Deposition systems and susceptor assemblies for depositing a film on a substrate App 20070101939 - Sumakeris; Joseph John ; et al.	2007-05-10
Directed reagents to improve material uniformity App 20070065577 - Sumakeris; Joseph John ; et al.	2007-03-22
Methods for controlling formation of deposits in a deposition system and deposition methods including the same Grant 7,118,781 - Sumakeris , et al. October 10, 2	2006-10-10
Methods For Controlling Formation Of Deposits In A Deposition System And Deposition Methods Including The Same App 20060216416 - Sumakeris; Joseph John ; et al.	2006-09-28
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures Grant 6,958,497 - Emerson , et al. October 25, 2	2005-10-25
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures App 20050045895 - Emerson, David Todd ; et al.	2005-03-03
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures App 20030006418 - Emerson, David Todd ; et al.	2003-01-09

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