NuStorage Technology Co., Ltd.

Patent Applications and Registrations

Patent applications and USPTO patent grants for NuStorage Technology Co., Ltd..The latest application filed is for "ferroelectric memory and capacitor structure thereof".

Company Profile

10.12.8

NuStorage Technology Co., Ltd. - Apia AS US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Three-dimensional memory device and manufacturing method thereof Grant 10,777,578 - Liu Sept	2020-09-15
Ferroelectric memory and capacitor structure thereof Grant 10,586,582 - Liu , et al.	2020-03-10
Three-dimensional memory device and manufacturing method thereof Grant 10,424,598 - Liu , et al. Sept	2019-09-24
Field effect transistor, memory element and manufacturing method of charge storage structure using paraelectric and ferroelectric material Grant 10,403,721 - Liu , et al. Sep	2019-09-03
Ferroelectric Memory And Capacitor Structure Thereof App 20190237121 - LIU; FU-CHOU ; et al.	2019-08-01
Vertical ferroelectric thin film storage transistor and data write and read methods thereof Grant 10,367,004 - Liu , et al. July 30, 2	2019-07-30
Vertical Ferroelectric Thin Film Storage Transistor And Data Write And Read Methods Thereof App 20190181147 - LIU; FU-CHOU	2019-06-13
Ferroelectric memory, data reading/writing method and manufacturing method thereof and capacitor structure Grant 10,304,512 - Liu , et al.	2019-05-28
Three-dimensional Memory Device And Manufacturing Method Thereof App 20190148406 - LIU; FU-CHOU	2019-05-16
Three-dimensional Memory Device And Manufacturing Method Thereof App 20190123061 - LIU; FU-CHOU	2019-04-25
Field Effect Transistor, Memory Element And Manufacturing Method Of Charge Storage Structure App 20180366547 - LIU; FU-CHOU	2018-12-20
Ferroelectric Field Effect Transistor, Ferroelectric Memory And Data Reading/writing Method And Manufacturing Method Thereof App 20180366476 - LIU; FU-CHOU	2018-12-20
Ferroelectric Memory, Data Reading/writing Method And Manufacturing Method Thereof And Capacitor Structure App 20180366174 - LIU; FU-CHOU	2018-12-20
Ferroelectric Tunnel Junction Unit, A Manufacturing Method Of A Ferroelectric Film Thereof, A Memory Element, And A Method Of Reading And Writing The Memory App 20180366477 - LIU; FU-CHOU	2018-12-20

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