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NOWAK; Etienne Patent Filings

NOWAK; Etienne

Patent Applications and Registrations

Patent applications and USPTO patent grants for NOWAK; Etienne.The latest application filed is for "resistive memory with a switching zone between two dielectric regions having different doping and/or dielectric constants".

Company Profile
1.2.6
  • NOWAK; Etienne - Grenoble Cedex 09 FR
  • Nowak; Etienne - Grenoble FR
  • NOWAK; Etienne - Grenoble Cedex 9 FR
  • Nowak; Etienne - Suwon-si KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Resistive Memory With A Switching Zone Between Two Dielectric Regions Having Different Doping And/or Dielectric Constants
App 20220069217 - GRENOUILLET; Laurent ;   et al.
2022-03-03
Circuit and method for programming resistive memory cells
Grant 11,217,307 - Vianello , et al. January 4, 2
2022-01-04
Circuit And Method For Programming Resistive Memory Cells
App 20210035638 - VIANELLO; Elisa ;   et al.
2021-02-04
Three dimensional semiconductor memory devices
Grant 9,711,520 - Nowak , et al. July 18, 2
2017-07-18
Three Dimensional Semiconductor Memory Devices
App 20160005753 - Nowak; Etienne ;   et al.
2016-01-07
Vertical Memory Devices And Methods Of Manufacturing The Same
App 20150115345 - Nowak; Etienne ;   et al.
2015-04-30

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