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Patent applications and USPTO patent grants for NOWAK; Etienne.The latest application filed is for "resistive memory with a switching zone between two dielectric regions having different doping and/or dielectric constants".
Patent | Date |
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Resistive Memory With A Switching Zone Between Two Dielectric Regions Having Different Doping And/or Dielectric Constants App 20220069217 - GRENOUILLET; Laurent ;   et al. | 2022-03-03 |
Circuit and method for programming resistive memory cells Grant 11,217,307 - Vianello , et al. January 4, 2 | 2022-01-04 |
Circuit And Method For Programming Resistive Memory Cells App 20210035638 - VIANELLO; Elisa ;   et al. | 2021-02-04 |
Three dimensional semiconductor memory devices Grant 9,711,520 - Nowak , et al. July 18, 2 | 2017-07-18 |
Three Dimensional Semiconductor Memory Devices App 20160005753 - Nowak; Etienne ;   et al. | 2016-01-07 |
Vertical Memory Devices And Methods Of Manufacturing The Same App 20150115345 - Nowak; Etienne ;   et al. | 2015-04-30 |
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