loadpatents
name:-0.0027859210968018
name:-0.0087001323699951
name:-0.00035905838012695
Norstel AB Patent Filings

Norstel AB

Patent Applications and Registrations

Patent applications and USPTO patent grants for Norstel AB.The latest application filed is for "homoepitaxial growth of sic on low off-axis sic wafers".

Company Profile
0.7.4
  • Norstel AB - Linkoping SE
  • Norstel AB - Norrkoping SE
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Lightly doped silicon carbide wafer and use thereof in high power devices
Grant 8,803,160 - Ellison , et al. August 12, 2
2014-08-12
Homoepitaxial growth of SiC on low off-axis SiC wafers
Grant 8,492,772 - Ellison , et al. July 23, 2
2013-07-23
Lightly doped silicon carbide wafer and use thereof in high power devices
Grant 8,097,524 - Ellison , et al. January 17, 2
2012-01-17
Homoepitaxial Growth Of Sic On Low Off-axis Sic Wafers
App 20090230406 - Ellison; Alexandre ;   et al.
2009-09-17
Homoepitaxial growth of SiC on low off-axis SiC wafers
Grant 7,531,433 - Ellison , et al. May 12, 2
2009-05-12
Lightly Doped Silicon Carbide Wafer And Use Thereof In High Power Devices
App 20090114924 - Ellison; Alexandre ;   et al.
2009-05-07
Lightly doped silicon carbide wafer and use thereof in high power devices
Grant 7,482,068 - Ellison , et al. January 27, 2
2009-01-27
Device and method to producing single crystals by vapour deposition
App 20080149020 - Janzen; Erik ;   et al.
2008-06-26
Device and method for producing single crystals by vapor deposition
Grant 7,361,222 - Janzen , et al. April 22, 2
2008-04-22
High resistivity silicon carbide single crystal
Grant 7,018,597 - Ellison , et al. March 28, 2
2006-03-28
Homoepitaxial growth of SiC on low off-axis SiC wafers
App 20060011128 - Ellison; Alexandre ;   et al.
2006-01-19
Company Registrations
NCAGE CodeSGB59NORSTEL AB
CAGE CodeSGB59NORSTEL AB

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