| Patent | Date |
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Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same
Grant 8,115,264 - Park , et al. February 14, 2 | 2012-02-14 |
Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
Grant 7,993,963 - Kang , et al. August 9, 2 | 2011-08-09 |
Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities
Grant 7,956,342 - Noh , et al. June 7, 2 | 2011-06-07 |
Method of fabricating Schottky barrier transistor
Grant 7,902,011 - Park , et al. March 8, 2 | 2011-03-08 |
Phase-change ram and method for fabricating the same
Grant 7,872,250 - Lee , et al. January 18, 2 | 2011-01-18 |
Phase change memory devices and fabrication methods thereof
Grant 7,872,908 - Suh , et al. January 18, 2 | 2011-01-18 |
Method of operating and structure of phase change random access memory (PRAM)
Grant 7,824,953 - Suh , et al. November 2, 2 | 2010-11-02 |
Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
App 20100273306 - Kang; Youn-seon ; et al. | 2010-10-28 |
Semiconductor device and method of fabricating metal gate of the same
Grant 7,800,186 - Park , et al. September 21, 2 | 2010-09-21 |
Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same
Grant 7,777,213 - Kang , et al. August 17, 2 | 2010-08-17 |
Method of fabricating Schottky barrier transistor
App 20100112771 - Park; Sung-ho ; et al. | 2010-05-06 |
Method of fabricating Schottky barrier transistor
Grant 7,674,665 - Park , et al. March 9, 2 | 2010-03-09 |
Phase change random access memory and method of operating the same
Grant 7,642,540 - Lee , et al. January 5, 2 | 2010-01-05 |
Phase-change random access memory and programming method
Grant 7,626,859 - Suh , et al. December 1, 2 | 2009-12-01 |
Phase change memory devices and fabrication methods thereof
App 20090289241 - Suh; Dong-Seok ; et al. | 2009-11-26 |
Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same
App 20090279352 - Noh; Jin-seo ; et al. | 2009-11-12 |
Phase change memory devices and fabrication methods thereof
Grant 7,599,216 - Suh , et al. October 6, 2 | 2009-10-06 |
Phase-change Ram And Method For Fabricating The Same
App 20090236582 - Lee; Sang-mock ; et al. | 2009-09-24 |
Method of fabricating phase change RAM including a fullerene layer
Grant 7,572,662 - Khang , et al. August 11, 2 | 2009-08-11 |
Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
Grant 7,573,058 - Noh , et al. August 11, 2 | 2009-08-11 |
Method of fabricating schottky barrier transistor
App 20090162983 - Park; Sung-ho ; et al. | 2009-06-25 |
Phase-change RAM and method for fabricating the same
Grant 7,541,633 - Lee , et al. June 2, 2 | 2009-06-02 |
Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods
Grant 7,508,041 - Noh , et al. March 24, 2 | 2009-03-24 |
Semiconductor device and method of fabricating metal gate of the same
App 20090065873 - Park; Sung-ho ; et al. | 2009-03-12 |
Semiconductor device and method of fabricating metal gate of the same
App 20090057783 - Park; Sung-ho ; et al. | 2009-03-05 |
Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
App 20080175042 - Kang; Youn-seon ; et al. | 2008-07-24 |
Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same
Grant 7,372,125 - Noh , et al. May 13, 2 | 2008-05-13 |
Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the same
App 20080023686 - Noh; Jin-seo ; et al. | 2008-01-31 |
Storage node, phase change random access memory and methods of fabricating the same
App 20070200108 - Noh; Jin-Seo ; et al. | 2007-08-30 |
Phase-change random access memory and programming method
App 20070189065 - Suh; Dong-Seok ; et al. | 2007-08-16 |
Phase change RAM including resistance element having diode function and methods of fabricating and operating the same
App 20070184613 - Kim; Ki-Joon ; et al. | 2007-08-09 |
Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
App 20070170881 - Noh; Jin-seo ; et al. | 2007-07-26 |
Method of fabricating phase change RAM including a fullerene layer
App 20070152754 - Khang; Yoon-ho ; et al. | 2007-07-05 |
Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same
App 20070080384 - Noh; Jin-Seo ; et al. | 2007-04-12 |
Phase change random access memory and method of operating the same
App 20070051935 - Lee; Sang-mock ; et al. | 2007-03-08 |
Phase change material, phase change random access memory including the same, and methods of manufacturing and operating the same
App 20070029606 - Noh; Jin-seo ; et al. | 2007-02-08 |
Phase change memory devices and fabrication methods thereof
App 20060197130 - Suh; Dong-Seok ; et al. | 2006-09-07 |
Phase-change RAM and method for fabricating the same
App 20060192193 - Lee; Sang-mock ; et al. | 2006-08-31 |
Method of operating and structure of phase change random access memory (PRAM)
App 20060152186 - Suh; Dong-seok ; et al. | 2006-07-13 |
Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods
App 20060038247 - Noh; Jin-seo ; et al. | 2006-02-23 |
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