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Patent applications and USPTO patent grants for Noguchi; Yasunari.The latest application filed is for "insulated-gate semiconductor device".
Patent | Date |
---|---|
Insulated-gate semiconductor device with protection diode Grant 8,344,457 - Noguchi , et al. January 1, 2 | 2013-01-01 |
Insulated-gate semiconductor device and PN junction diodes Grant 7,825,474 - Noguchi , et al. November 2, 2 | 2010-11-02 |
Insulated-gate Semiconductor Device App 20100148268 - NOGUCHI; Yasunari ;   et al. | 2010-06-17 |
Insulated-gate semiconductor device Grant 7,732,869 - Noguchi , et al. June 8, 2 | 2010-06-08 |
Insulated gate semiconductor device Grant 7,692,240 - Ishida , et al. April 6, 2 | 2010-04-06 |
Insulated-gate Semiconductor Device App 20080079079 - Noguchi; Yasunari ;   et al. | 2008-04-03 |
Insulated-gate Semiconductor Device App 20080079078 - NOGUCHI; Yasunari ;   et al. | 2008-04-03 |
Quasi resonant type switching power supply apparatus with overcurrent limiting Grant 7,301,786 - Noguchi , et al. November 27, 2 | 2007-11-27 |
Insulated gate semiconductor device App 20070262390 - Ishida; Hiroyasu ;   et al. | 2007-11-15 |
Switching power supply Grant 7,199,649 - Noguchi April 3, 2 | 2007-04-03 |
Quasi resonant type switching power supply unit and quasi resonant type switching power apparatus using the same App 20060202562 - Noguchi; Yasunari ;   et al. | 2006-09-14 |
Switching power supply App 20060067091 - Noguchi; Yasunari | 2006-03-30 |
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