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name:-0.012063980102539
name:-0.0004429817199707
Noguchi; Ko Patent Filings

Noguchi; Ko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Noguchi; Ko.The latest application filed is for "semiconductor device".

Company Profile
0.9.4
  • Noguchi; Ko - Kanagawa JP
  • Noguchi; Ko - Tokyo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device
Grant 8,710,589 - Noguchi April 29, 2
2014-04-29
Semiconductor Device
App 20130153959 - NOGUCHI; Ko
2013-06-20
Semiconductor device with protective element
Grant 6,600,176 - Noguchi July 29, 2
2003-07-29
Circuit design method for designing conductive members with a multilayered structure to have antenna sized of proper values
Grant 6,550,039 - Noguchi April 15, 2
2003-04-15
Circuit design method calculating antenna size of conductive member connected to gate oxide film of transistor with approximate expression
Grant 6,393,603 - Noguchi May 21, 2
2002-05-21
Method of operating multi-industry integrated complex for basic industrial plants
App 20020047230 - Okada, Tsuyoshi ;   et al.
2002-04-25
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device
Grant 6,372,628 - Matsubara , et al. April 16, 2
2002-04-16
Semiconductor Device
App 20020040997 - NOGUCHI, KO
2002-04-11
Circuit design method for designing conductive members with a multilayered structure to have antenna sized of proper values
App 20010044925 - Noguchi, Ko
2001-11-22
Grooved wiring structure in semiconductor device and method for forming the same
Grant 6,100,177 - Noguchi August 8, 2
2000-08-08
Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film
Grant 6,091,081 - Matsubara , et al. July 18, 2
2000-07-18
Semiconductor device having field effect transistor connected at gate electrode to protective junction diode discharging in the presence of light
Grant 5,844,282 - Noguchi December 1, 1
1998-12-01
Method for manufacturing high voltage semiconductor device
Grant 5,698,457 - Noguchi December 16, 1
1997-12-16

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