loadpatents
Patent applications and USPTO patent grants for Noda; Takao.The latest application filed is for "semiconductor device".
Patent | Date |
---|---|
Semiconductor device having termination region with laterally heterogeneous insulating films Grant 9,620,600 - Ohara , et al. April 11, 2 | 2017-04-11 |
Semiconductor device Grant 9,608,058 - Ohara , et al. March 28, 2 | 2017-03-28 |
Semiconductor Device App 20170077220 - OHARA; Ryoichi ;   et al. | 2017-03-16 |
Semiconductor Device App 20160276448 - Ohara; Ryoichi ;   et al. | 2016-09-22 |
Semiconductor device Grant 9,385,243 - Hori , et al. July 5, 2 | 2016-07-05 |
Semiconductor device Grant 9,379,234 - Kono , et al. June 28, 2 | 2016-06-28 |
Semiconductor Device App 20150372153 - HORI; Yoichi ;   et al. | 2015-12-24 |
Semiconductor Device App 20150357482 - Hori; Yoichi ;   et al. | 2015-12-10 |
Semiconductor Device App 20150287840 - OTA; Tsuyoshi ;   et al. | 2015-10-08 |
Semiconductor diode device Grant 9,142,687 - Hori , et al. September 22, 2 | 2015-09-22 |
Method For Manufacturing Semiconductor Device App 20150262889 - Yamashita; Atsuko ;   et al. | 2015-09-17 |
Semiconductor Device App 20150263158 - Kono; Hiroshi ;   et al. | 2015-09-17 |
Nitride semiconductor device Grant 9,029,915 - Saito , et al. May 12, 2 | 2015-05-12 |
Semiconductor Device App 20150035111 - OTA; Tsuyoshi ;   et al. | 2015-02-05 |
Semiconductor Device App 20150001552 - Hori; Yoichi ;   et al. | 2015-01-01 |
Semiconductor device and method for manufacturing semiconductor device Grant 8,916,881 - Yanase , et al. December 23, 2 | 2014-12-23 |
Semiconductor device Grant 8,866,151 - Noda , et al. October 21, 2 | 2014-10-21 |
Semiconductor Device And Strain Monitor App 20140283618 - Yasumoto; Takaaki ;   et al. | 2014-09-25 |
Semiconductor Device And Method For Manufacturing Semiconductor Device App 20140014971 - YANASE; Naoko ;   et al. | 2014-01-16 |
Semiconductor device and method for manufacturing semiconductor device Grant 8,558,244 - Yanase , et al. October 15, 2 | 2013-10-15 |
Semiconductor Device App 20130153966 - Saito; Wataru ;   et al. | 2013-06-20 |
Nitride semiconductor device Grant 8,390,030 - Saito , et al. March 5, 2 | 2013-03-05 |
Semiconductor Device App 20120241762 - NODA; Takao ;   et al. | 2012-09-27 |
Semiconductor device Grant 8,227,834 - Saito , et al. July 24, 2 | 2012-07-24 |
Nitride semiconductor device Grant 8,203,172 - Saito , et al. June 19, 2 | 2012-06-19 |
Semiconductor Device App 20110309413 - SAITO; Yasunobu ;   et al. | 2011-12-22 |
Semiconductor device Grant 8,030,660 - Saito , et al. October 4, 2 | 2011-10-04 |
Nitride-based Fet App 20110204380 - YOSHIOKA; Akira ;   et al. | 2011-08-25 |
Semiconductor Device And Method For Manufacturing Semiconductor Device App 20110193101 - YANASE; Naoko ;   et al. | 2011-08-11 |
Nitride semiconductor device Grant 7,935,983 - Saito , et al. May 3, 2 | 2011-05-03 |
Nitride Semiconductor Device App 20100314666 - SAITO; Wataru ;   et al. | 2010-12-16 |
Semiconductor device Grant 7,728,354 - Saito , et al. June 1, 2 | 2010-06-01 |
Semiconductor Device App 20090200576 - Saito; Yasunobu ;   et al. | 2009-08-13 |
Nitride semiconductor device Grant 7,538,366 - Saito , et al. May 26, 2 | 2009-05-26 |
Nitride semiconductor device Grant 7,498,618 - Saito , et al. March 3, 2 | 2009-03-03 |
Semiconductor Device App 20080277692 - Saito; Wataru ;   et al. | 2008-11-13 |
Semiconductor Device App 20080116486 - SAITO; Wataru ;   et al. | 2008-05-22 |
Nitride Semiconductor Device App 20080023706 - Saito; Yasunobu ;   et al. | 2008-01-31 |
Nitride Semiconductor Device App 20070254431 - Saito; Wataru ;   et al. | 2007-11-01 |
Nitride semiconductor device App 20070051977 - Saito; Wataru ;   et al. | 2007-03-08 |
Cathode electroactive material, production method therefor and secondary cell Grant 7,090,822 - Noda , et al. August 15, 2 | 2006-08-15 |
Heterojunction type compound semiconductor field effect transistor and its manufacturing method Grant 6,936,870 - Nishihori , et al. August 30, 2 | 2005-08-30 |
Cathode electroactive material, production method therefor and secondary cell App 20050175899 - Noda, Takao ;   et al. | 2005-08-11 |
HEMT with a graded InGaAlP layer separating ohmic and Schottky contacts Grant 6,919,589 - Noda July 19, 2 | 2005-07-19 |
Cathode electroactive material, production method therefor and secondary cell Grant 6,890,456 - Noda , et al. May 10, 2 | 2005-05-10 |
Repair tool for depression in putting green on golf course Grant 6,857,974 - Noda February 22, 2 | 2005-02-22 |
Semiconductor device App 20040169194 - Noda, Takao | 2004-09-02 |
Heterojunction type compound semiconductor field effect transistor and its manufacturing method App 20040164317 - Nishihori, Kazuya ;   et al. | 2004-08-26 |
Cathode electroactive material, production method therefor and secondary cell App 20040135128 - Noda, Takao ;   et al. | 2004-07-15 |
Repair tool for depression in putting green on golf course App 20040082410 - Noda, Takao | 2004-04-29 |
Cathode electroactive material, production method therefor and secondary cell Grant 6,699,618 - Noda , et al. March 2, 2 | 2004-03-02 |
Cathode electroactive material, production method therefor, and nonaqueous secondary cell using the same Grant 6,673,491 - Shirakawa , et al. January 6, 2 | 2004-01-06 |
Cathode electroactive material, production method therefor and secondary cell App 20030054248 - Noda, Takao ;   et al. | 2003-03-20 |
Cathode electroactive material, production method and nonaqueous secondary battery comprising the same Grant 6,337,157 - Shirakawa , et al. January 8, 2 | 2002-01-08 |
Cathode Electroactive Material, Production Method And Nonaqueous Secondary Battery Comprising The Same App 20010053482 - SHIRAKAWA, AKIHIKO ;   et al. | 2001-12-20 |
Cathode electroactive material, production method therefor, and nonaqueous secondary cell using the same App 20010014421 - Shirakawa, Akihiko ;   et al. | 2001-08-16 |
Semiconductor device Grant 6,072,203 - Nozaki , et al. June 6, 2 | 2000-06-06 |
High electron mobility transistor Grant 5,319,223 - Fujita , et al. June 7, 1 | 1994-06-07 |
Method of manufacturing a p-type compound semiconductor thin film containing a III-group element and a v-group element by metal organics chemical vapor deposition Grant 5,168,077 - Ashizawa , et al. December 1, 1 | 1992-12-01 |
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