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name:-0.01052188873291
name:-0.0071048736572266
name:-0.00039196014404297
Noble; Ross E. Patent Filings

Noble; Ross E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Noble; Ross E..The latest application filed is for "method for forming a through silicon via (tsv)".

Company Profile
0.5.7
  • Noble; Ross E. - Austin TX
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Dual interlayer dielectric stressor integration with a sacrificial underlayer film stack
Grant 8,247,850 - Jawarani , et al. August 21, 2
2012-08-21
Method for forming a through silicon via (TSV)
Grant 8,039,386 - Dao , et al. October 18, 2
2011-10-18
Method For Forming A Through Silicon Via (tsv)
App 20110237073 - Dao; Thuy B. ;   et al.
2011-09-29
Method of forming a semiconductor layer
Grant 7,972,922 - Martinez , et al. July 5, 2
2011-07-05
Method Of Forming A Semiconductor Layer
App 20100129952 - Martinez; Hunter J. ;   et al.
2010-05-27
Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method
Grant 7,611,936 - Mathew , et al. November 3, 2
2009-11-03
Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method
App 20080280429 - Mathew; Leo ;   et al.
2008-11-13
Dual interlayer dielectric stressor integration with a sacrificial underlayer film stack
App 20080164531 - Jawarani; Dharmesh ;   et al.
2008-07-10
Removing Metal Using An Oxidizing Chemistry
App 20070295357 - Lovejoy; Michael Luke ;   et al.
2007-12-27
Semiconductor fabrication process including source/drain recessing and filling
App 20060115949 - Zhang; Da ;   et al.
2006-06-01
Semiconductor device having an insulating layer and method for forming
Grant 6,908,822 - Rendon , et al. June 21, 2
2005-06-21
Semiconductor device having an insulating layer and method for forming
App 20050056899 - Rendon, Michael J. ;   et al.
2005-03-17

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