| Patent | Date |
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Method For Operating Filtration Apparatus And Filtration Apparatus
App 20180369723 - MIKI; Hiroko ; et al. | 2018-12-27 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 10,078,059 - Ishibashi , et al. September 18, 2 | 2018-09-18 |
Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device
Grant 9,691,608 - Tanaka , et al. June 27, 2 | 2017-06-27 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20170115239 - ISHIBASHI; Keiji ; et al. | 2017-04-27 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 9,570,540 - Ishibashi , et al. February 14, 2 | 2017-02-14 |
Silicon Carbide Substrate, Silicon Carbide Semiconductor Device, And Methods For Manufacturing Silicon Carbide Substrate And Silicon Carbide Semiconductor Device
App 20160086798 - Tanaka; So ; et al. | 2016-03-24 |
Group III nitride crystal substrate
Grant 9,035,429 - Nishiura , et al. May 19, 2 | 2015-05-19 |
Compound semiconductor substrate
Grant 9,000,567 - Miyahara , et al. April 7, 2 | 2015-04-07 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20140349112 - ISHIBASHI; Keiji ; et al. | 2014-11-27 |
Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method
Grant 8,841,215 - Ishibashi , et al. September 23, 2 | 2014-09-23 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 8,828,140 - Ishibashi , et al. September 9, 2 | 2014-09-09 |
Method Of Surface Treatment Of Group Iii Nitride Crystal Film, Group Iii Nitride Crystal Substrate, Group Iii Nitride Crystal Substrate With Epitaxial Layer, And Semiconductor Device
App 20140124826 - Ishibashi; Keiji ; et al. | 2014-05-08 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20130292802 - ISHIBASHI; Keiji ; et al. | 2013-11-07 |
Method Of Processing A Surface Of Group Iii Nitride Crystal And Group Iii Nitride Crystal Substrate
App 20130075867 - NISHIURA; Takayuki ; et al. | 2013-03-28 |
Method of packaging compound semiconductor substrates
Grant 8,381,493 - Nishiura , et al. February 26, 2 | 2013-02-26 |
Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
Grant 8,338,299 - Nishiura , et al. December 25, 2 | 2012-12-25 |
Compound Semiconductor Substrate
App 20120292747 - MIYAHARA; Kenichi ; et al. | 2012-11-22 |
Polishing Agent, Compound Semiconductor Manufacturing Method, and Semiconductor Device Manufacturing Method
App 20120164833 - Ishibashi; Keiji ; et al. | 2012-06-28 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 8,192,543 - Ishibashi , et al. June 5, 2 | 2012-06-05 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
Grant 8,177,911 - Hachigo , et al. May 15, 2 | 2012-05-15 |
Damage Evaluation Method Of Compound Semiconductor Member, Production Method Of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member, And Gallium Nitride Compound Semiconductor Membrane
App 20120100643 - Hachigo; Akihiro ; et al. | 2012-04-26 |
Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate
Grant 8,133,815 - Mezaki , et al. March 13, 2 | 2012-03-13 |
Production method of compound semiconductor member
Grant 8,115,927 - Hachigo , et al. February 14, 2 | 2012-02-14 |
GaAs semiconductor substrate for group III-V compound semiconductor device
Grant 8,044,493 - Nishiura October 25, 2 | 2011-10-25 |
III-V compound semiconductor substrate manufacturing method
Grant 7,960,284 - Hachigo , et al. June 14, 2 | 2011-06-14 |
Nitride-based Compound Semiconductor Device, Compound Semiconductor Device, And Method Of Producing The Devices
App 20110018105 - Hachigo; Akihiro ; et al. | 2011-01-27 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 7,854,804 - Ishibashi , et al. December 21, 2 | 2010-12-21 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
Grant 7,851,381 - Ishibashi , et al. December 14, 2 | 2010-12-14 |
Method Of Processing A Surface Of Group Iii Nitride Crystal And Group Iii Nitride Crystal Substrate
App 20100248478 - NISHIURA; Takayuki ; et al. | 2010-09-30 |
Method Of Surface Treatment Of Group Iii Nitride Crystal Film, Group Iii Nitride Crystal Substrate, Group Iii Nitride Crystal Substrate With Epitaxial Layer, And Semiconductor Device
App 20100227532 - Ishibashi; Keiji ; et al. | 2010-09-09 |
Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal
Grant 7,737,043 - Nishiura , et al. June 15, 2 | 2010-06-15 |
Nitride Crystal, Nitride Crystal Substrate, Epilayer-containing Nitride Crystal Substrate, Semiconductor Device And Method Of Manufacturing The Same
App 20100123168 - ISHIBASHI; Keiji ; et al. | 2010-05-20 |
Nitride semiconductor substrate, and method for working nitride semiconductor substrate
Grant 7,713,844 - Nishiura , et al. May 11, 2 | 2010-05-11 |
Damage Evaluation Method Of Compound Semiconductor Member, Production Method Of Compound Semiconductor Member, Gallium Nitride Compound Semiconductor Member, And Gallium Nitride Compound Semiconductor Membrane
App 20100068834 - Hachigo; Akihiro ; et al. | 2010-03-18 |
Nitride-based Compound Semiconductor, Method Of Cleaning A Compound Semiconductor, Method Of Producing The Same, And Substrate
App 20090291567 - HACHIGO; AKIHIRO ; et al. | 2009-11-26 |
GaAs semiconductor substrate and fabrication method thereof
Grant 7,619,301 - Nishiura , et al. November 17, 2 | 2009-11-17 |
Method of Packaging Compound Semiconductor Substrates
App 20090249747 - Nishiura; Takayuki ; et al. | 2009-10-08 |
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
Grant 7,569,493 - Hachigo , et al. August 4, 2 | 2009-08-04 |
Polishing Slurry, Method Of Treating Surface Of Gaxin1-xasyp1-y Crystal And Gaxin1-xasyp1-y Crystal Substrate
App 20090159845 - ISHIBASHI; Keiji ; et al. | 2009-06-25 |
GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III-V COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
App 20090140390 - NISHIURA; Takayuki | 2009-06-04 |
Polishing slurry, method of treating surface of Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal and Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal substrate
Grant 7,507,668 - Ishibashi , et al. March 24, 2 | 2009-03-24 |
GaAs semiconductor substrate and fabrication method thereof
App 20080296738 - Nishiura; Takayuki ; et al. | 2008-12-04 |
Method of Polishing Compound Semiconductor Substrate, Compound Semiconductor Substrate, Method of Manufacturing Compound Semiconductor Epitaxial Substrate, and Compound Semiconductor Epitaxial Substrate
App 20080299350 - Mezaki; Yoshio ; et al. | 2008-12-04 |
Method of Cleaning Gaas Substrate, Method of Producing Gaas Substrate, Method of Fabricating Epitaxial Susbstrate, and Gaas Wafer
App 20080292877 - Horie; Yusuke ; et al. | 2008-11-27 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
App 20080272392 - Ishibashi; Keiji ; et al. | 2008-11-06 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
App 20080271667 - Ishibashi; Keiji ; et al. | 2008-11-06 |
Method of surface treating substrates and method of manufacturing III-V compound semiconductors
Grant 7,432,186 - Nishiura , et al. October 7, 2 | 2008-10-07 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
Grant 7,416,604 - Ishibashi , et al. August 26, 2 | 2008-08-26 |
III-V Compound Semiconductor Substrate Manufacturing Method
App 20080176400 - Hachigo; Akihiro ; et al. | 2008-07-24 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane
App 20080044338 - Hachigo; Akihiro ; et al. | 2008-02-21 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device
App 20070281484 - Ishibashi; Keiji ; et al. | 2007-12-06 |
Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal
App 20070269989 - Nishiura; Takayuki ; et al. | 2007-11-22 |
Method of processing a surface of group III nitride crystal and group III nitride crystal substrate
App 20070254401 - Nishiura; Takayuki ; et al. | 2007-11-01 |
Surface treatment method of compound semiconductor substrate, fabrication method of compound semiconductor, compound semiconductor substrate, and semiconductor wafer
App 20070207630 - Nishiura; Takayuki ; et al. | 2007-09-06 |
Nitride semiconductor substrate, and method for working nitride semiconductor substrate
App 20070080366 - Nishiura; Takayuki ; et al. | 2007-04-12 |
Polishing slurry, method of treating surface of GaxIn1-xASyP1-y crystal and GaxIn1-xASyP1-y crystal substrate
App 20070075041 - Ishibashi; Keiji ; et al. | 2007-04-05 |
Container, a packaging body, manufacturing method of a container, manufacturing method of a packaging body, and a compound semiconductor substrate
App 20070023321 - Gotou; Noboru ; et al. | 2007-02-01 |
Method of Surface Treating Substrates and Method of Manufacturing III-V Compound Semiconductors
App 20070014915 - Nishiura; Takayuki ; et al. | 2007-01-18 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
App 20060292728 - Ishibashi; Keiji ; et al. | 2006-12-28 |
Method of working nitride semiconductor crystal
App 20060292832 - Ishibashi; Keiji ; et al. | 2006-12-28 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
App 20060281201 - Hachigo; Akihiro ; et al. | 2006-12-14 |
Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate
App 20060281328 - Nishiura; Takayuki ; et al. | 2006-12-14 |
Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane
App 20060272573 - Hachigo; Akihiro ; et al. | 2006-12-07 |
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of producing the same, and substrate
App 20060264011 - Hachigo; Akihiro ; et al. | 2006-11-23 |
Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
App 20060236922 - Ishibashi; Keiji ; et al. | 2006-10-26 |
Group III-V compound semiconductor wafers and manufacturing method thereof
App 20010023022 - Nishiura, Takayuki ; et al. | 2001-09-20 |
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