Nishioka; Muneyuki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nishioka; Muneyuki.The latest application filed is for "indium phosphide crystal substrate".

Company Profile

1.6.8

Nishioka; Muneyuki - Kobe JP
NISHIOKA; Muneyuki - Kobe-shi Hyogo
Nishioka; Muneyuki - Itami JP
Nishioka; Muneyuki - Suita JP
Nishioka; Muneyuki - Itami-shi JP
Nishioka; Muneyuki - Iwakuni JP
Nishioka; Muneyuki - Hyogo JP
Nishioka; Muneyuki - Osaka JP
Nishioka; Muneyuki - Yamaguchi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Indium phosphide crystal substrate Grant 11,456,363 - Nishioka , et al. September 27, 2	2022-09-27
Indium Phosphide Crystal Substrate App 20200066850 - NISHIOKA; Muneyuki ; et al.	2020-02-27
Group III nitride semiconductor crystal substrate and semiconductor device Grant 8,698,282 - Okahisa , et al. April 15, 2	2014-04-15
Optical wavelength conversion element having a cesium-lithium-borate crystal Grant 7,948,673 - Yoshimura , et al. May 24, 2	2011-05-24
Al.sub.xGa.sub.yIn.sub.1-x-yN crystal substrate, semiconductor device, and method of manufacturing the same Grant 7,943,964 - Fujiwara , et al. May 17, 2	2011-05-17
Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device App 20100164070 - OKAHISA; Takuji ; et al.	2010-07-01
Method for preparing borate-based crystal and laser oscillation apparatus Grant 7,744,696 - Sasaki , et al. June 29, 2	2010-06-29
A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME App 20090194847 - Fujiwara; Shinsuke ; et al.	2009-08-06
Group Iii Nitride Semiconductor Crystal Growing Method, Group Iii Nitride Semiconductor Crystal Substrate Fabrication Method, And Group Iii Nitride Semiconductor Crystal Substrate App 20090127664 - OKAHISA; Takuji ; et al.	2009-05-21
Group Iii Nitride Semiconductor Crystal Substrate And Semiconductor Device App 20090127662 - Okahisa; Takuji ; et al.	2009-05-21
Group Iii Nitride Semiconductor Crystal Growing Method, Group Iii Nitride Semiconductor Crystal Substrate Fabrication Method, And Group Iii Nitride Semiconductor Crystal Substrate App 20090127663 - Okahisa; Takuji ; et al.	2009-05-21
Wavelength Conversion Optical Element, Method For Fabricating Wavelength Conversion Optical Element, Wavelength Conversion Device, Ultraviolet Laser Irradiator And Laser Material Processing System App 20090080475 - YOSHIMURA; Masashi ; et al.	2009-03-26
Method for preparing borate-based crystal and laser oscillation apparatus App 20060102066 - Sasaki; Takatomo ; et al.	2006-05-18

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