Nishino; Shigehiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nishino; Shigehiro.The latest application filed is for "voltage division resistor for acceleration tubes, acceleration tube, and accelerator".

Company Profile

0.10.5

Nishino; Shigehiro - Kyoto JP
Nishino, Shigehiro - Kyoto-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Voltage division resistor for acceleration tubes, acceleration tube, and accelerator Grant 7,671,546 - Nishino , et al. March 2, 2	2010-03-02
Large-diameter SiC wafer and manufacturing method thereof Grant 7,544,249 - Nishino , et al. June 9, 2	2009-06-09
Voltage Division Resistor for Acceleration Tubes, Acceleration Tube, and Accelerator App 20090039804 - Nishino; Shigehiro ; et al.	2009-02-12
Ion Source App 20080067411 - Nishino; Shigehiro ; et al.	2008-03-20
Large-diameter sic wafer and manufacturing method thereof App 20060097266 - Nishino; Shigehiro ; et al.	2006-05-11
Production method of .alpha.-SiC wafer Grant 6,995,036 - Nishino , et al. February 7, 2	2006-02-07
Production method of alpha-sic wafer App 20040241343 - Nishino, Shigehiro ; et al.	2004-12-02
Method of making SiC single crystal and apparatus for making SiC single crystal Grant 6,391,109 - Shiomi , et al. May 21, 2	2002-05-21
Method and apparatus for producing silicon carbide single crystal Grant 6,336,971 - Nagato , et al. January 8, 2	2002-01-08
Method of making SiC single crystal and apparatus for making SiC single crystal App 20010000864 - Shiomi, Hiromu ; et al.	2001-05-10
Method of making SiC single crystal and apparatus for making SiC single crystal Grant 6,193,797 - Shiomi , et al. February 27, 2	2001-02-27
Method of making GaN single crystal and apparatus for making GaN single crystal Grant 6,136,093 - Shiomi , et al. October 24, 2	2000-10-24

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