loadpatents
Patent applications and USPTO patent grants for Nishimatsu; Shigeru.The latest application filed is for "surface analyzing method and apparatus".
Patent | Date |
---|---|
Surface analyzing method and apparatus Grant 5,220,169 - Ninomiya , et al. June 15, 1 | 1993-06-15 |
Method of semiconductor surface measurment and an apparatus for realizing the same Grant 5,140,272 - Nishimatsu , et al. August 18, 1 | 1992-08-18 |
Surface analysis method and apparatus Grant 5,138,158 - Ninomiya , et al. August 11, 1 | 1992-08-11 |
Method of surface treatment Grant 5,108,543 - Suzuki , et al. April 28, 1 | 1992-04-28 |
Surface treatment method Grant 5,108,778 - Suzuki , et al. April 28, 1 | 1992-04-28 |
Surface treatment apparatus Grant 4,901,667 - Suzuki , et al. February 20, 1 | 1990-02-20 |
Method for microwave plasma processing Grant 4,705,595 - Okudaira , et al. November 10, 1 | 1987-11-10 |
Dry-processing apparatus Grant 4,624,214 - Suzuki , et al. November 25, 1 | 1986-11-25 |
Method and apparatus for monitoring etching Grant 4,609,426 - Ogawa , et al. September 2, 1 | 1986-09-02 |
Method and apparatus for surface treatment by plasma Grant 4,579,623 - Suzuki , et al. April 1, 1 | 1986-04-01 |
Microwave plasma etching apparatus Grant 4,559,100 - Ninomiya , et al. December 17, 1 | 1985-12-17 |
Surface treatment apparatus Grant 4,522,674 - Ninomiya , et al. June 11, 1 | 1985-06-11 |
Method for growing silicon-including film by employing plasma deposition Grant 4,481,229 - Suzuki , et al. November 6, 1 | 1984-11-06 |
Microwave plasma etching Grant 4,462,863 - Nishimatsu , et al. July 31, 1 | 1984-07-31 |
Semiconductor device with multi-layered electrodes Grant 4,451,841 - Hori , et al. May 29, 1 | 1984-05-29 |
Microwave plasma source Grant 4,433,228 - Nishimatsu , et al. February 21, 1 | 1984-02-21 |
Microwave plasma etching apparatus having fan-shaped discharge Grant 4,430,138 - Suzuki , et al. February 7, 1 | 1984-02-07 |
Process for plasma etching Grant 4,330,384 - Okudaira , et al. May 18, 1 | 1982-05-18 |
Dry etching apparatus Grant 4,298,419 - Suzuki , et al. November 3, 1 | 1981-11-03 |
Semiconductor device and process for making the same Grant 4,270,262 - Hori , et al. June 2, 1 | 1981-06-02 |
Insulated gate field effect transistor having drain region containing low impurity concentration layer Grant 4,005,450 - Yoshida , et al. January 25, 1 | 1977-01-25 |
Insulated Gate Field Effect Transistors And Method Of Producing The Same Grant 3,787,962 - Yoshida , et al. January 29, 1 | 1974-01-29 |
Method Of Making Semiconductor Devices Grant 3,767,483 - Tokuyama , et al. October 23, 1 | 1973-10-23 |
Method For Fabricating Semiconductor Devices By Ion Implantation Grant 3,615,875 - Morita , et al. October 26, 1 | 1971-10-26 |
Method Of Forming A Junction By Ion Implantation Grant 3,607,449 - Tokuyama , et al. September 21, 1 | 1971-09-21 |
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