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Patent applications and USPTO patent grants for Ning; Xian Jie.The latest application filed is for "integration scheme for strained source/drain cmos using oxide hard mask".
Patent | Date |
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Integration scheme for strained source/drain CMOS using oxide hard mask Grant 8,058,120 - Ning , et al. November 15, 2 | 2011-11-15 |
Integration Scheme For Strained Source/drain Cmos Using Oxide Hard Mask App 20110070701 - Ning; Xian Jie ;   et al. | 2011-03-24 |
Method and structure of manufacturing high capacitance metal on insulator capacitors in copper Grant 7,015,110 - Ning March 21, 2 | 2006-03-21 |
Method for fabricating copper damascene structures in porous dielectric materials Grant 6,972,251 - Ning December 6, 2 | 2005-12-06 |
Method and structure of manufacturing high capacitance metal on insulator capacitors in copper App 20050140010 - Ning, Xian Jie | 2005-06-30 |
Method for fabricating copper damascene structures in porous dielectric materials App 20040126997 - Ning, Xian Jie | 2004-07-01 |
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