Nieh; Chun-Feng

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nieh; Chun-Feng.The latest application filed is for "gate structure of semiconductor device and method of manufacture".

Company Profile

31.74.93

Nieh; Chun-Feng - Hsinchu TW
Nieh; Chun-Feng - Hsinchu City TW
Nieh; Chun-Feng - Hsin-Chu TW
Nieh; Chun-Feng - Hsinchu County N/A TW
Nieh; Chun-Feng - Baoshan Township TW
Nieh; Chun-Feng - Hsinchu Hsien TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Gate Structure Of Semiconductor Device And Method Of Manufacture App 20220310405 - Wang; Tsan-Chun ; et al.	2022-09-29
Reduce Well Dopant Loss in FinFETs Through Co-Implantation App 20220301874 - Liu; Sih-Jie ; et al.	2022-09-22
FinFET device and methods of forming Grant 11,450,757 - Lin , et al. September 20, 2	2022-09-20
Method of forming a semiconductor device with implantation of impurities at high temperature Grant 11,450,743 - Wang , et al. September 20, 2	2022-09-20
Semiconductor Device And Manufacturing Method Thereof App 20220262644 - Chang; Tien-Shun ; et al.	2022-08-18
Semiconductor device and manufacturing method thereof Grant 11,367,621 - Chang , et al. June 21, 2	2022-06-21
Gate structure of semiconductor device and method of manufacture Grant 11,361,977 - Wang , et al. June 14, 2	2022-06-14
Ion implantation for nano-FET Grant 11,348,835 - Lin , et al. May 31, 2	2022-05-31
Reduce well dopant loss in FinFETs through co-implantation Grant 11,348,792 - Liu , et al. May 31, 2	2022-05-31
Method of Implantation for Semiconductor Device App 20220123111 - Wang; Bau-Ming ; et al.	2022-04-21
Method And Device To Reduce Epitaxial Defects Due To Contact Stress Upon A Semicondcutor Wafer App 20220059394 - LIU; Sih-Jie ; et al.	2022-02-24
Ion Implantation for Nano-FET App 20220037465 - Lin; Yu-Chang ; et al.	2022-02-03
Warm Wafer After Ion Cryo-implantation App 20220028707 - Lin; Yu-Chang ; et al.	2022-01-27
Semiconductor Device And Manufacturing Method Thereof App 20210391182 - Chang; Tien-Shun ; et al.	2021-12-16
Dual Dopant Source/drain Regions And Methods Of Forming Same App 20210375687 - Lin; Yu-Chang ; et al.	2021-12-02
Semiconductor Device with Implant and Method of Manufacturing Same App 20210367038 - Lin; Yu-Chang ; et al.	2021-11-25
Implantation And Annealing For Semiconductor Device App 20210328044 - Lin; Yu-Chang ; et al.	2021-10-21
Method Of Manufacturing Semiconductor Devices App 20210313456 - WANG; Tsan-Chun ; et al.	2021-10-07
Gradient doped region of recessed Fin forming a FinFET device Grant 11,133,415 - Lin , et al. September 28, 2	2021-09-28
Formation of semiconductor device structure by implantation Grant 11,127,817 - Wang , et al. September 21, 2	2021-09-21
Method For Fabricating A Semiconductor Device App 20210272850 - WANG; Tsan-Chun ; et al.	2021-09-02
Semiconductor device with implant and method of manufacturing same Grant 11,088,249 - Lin , et al. August 10, 2	2021-08-10
Implantation and annealing for semiconductor device Grant 11,056,573 - Lin , et al. July 6, 2	2021-07-06
Reduce Well Dopant Loss in FinFETs Through Co-Implantation App 20210202253 - Liu; Sih-Jie ; et al.	2021-07-01
Method of manufacturing semiconductor devices Grant 11,043,580 - Wang , et al. June 22, 2	2021-06-22
Method for fabricating a semiconductor device Grant 11,031,293 - Wang , et al. June 8, 2	2021-06-08
Enhanced Channel Strain To Reduce Contact Resistance In Nmos Fet Devices App 20210159226 - LIN; Yu-Chang ; et al.	2021-05-27
Method for fabricating a semiconductor device Grant 11,011,428 - Wang , et al. May 18, 2	2021-05-18
Semiconductor Device with Implant and Method of Manufacturing Same App 20210083056 - Lin; Yu-Chang ; et al.	2021-03-18
Reduce well dopant loss in FinFETs through co-implantation Grant 10,930,507 - Liu , et al. February 23, 2	2021-02-23
Enhanced channel strain to reduce contact resistance in NMOS FET devices Grant 10,916,546 - Lin , et al. February 9, 2	2021-02-09
FinFET Device and Methods of Forming App 20200411672 - Lin; Yu-Chang ; et al.	2020-12-31
Implantation and Annealing for Semiconductor Device App 20200395462 - Lin; Yu-Chang ; et al.	2020-12-17
Gradient Doped Region of Recessed Fin Forming a FinFET Device App 20200395481 - Lin; Jyun-Hao ; et al.	2020-12-17
Gate Structure Of Semiconductor Device And Method Of Manufacture App 20200365414 - Wang; Tsan-Chun ; et al.	2020-11-19
Method and apparatus for forming semiconductor structure Grant 10,832,913 - Wang , et al. November 10, 2	2020-11-10
FinFET device and methods of forming Grant 10,770,570 - Lin , et al. Sep	2020-09-08
Gradient doped region of recessed fin forming a FinFET device Grant 10,763,363 - Lin , et al. Sep	2020-09-01
Gate structure of semiconductor device Grant 10,741,412 - Wang , et al. A	2020-08-11
Mask formation by selectively removing portions of a layer that have not been implanted Grant 10,714,344 - Chang , et al.	2020-07-14
Method of manufacturing semiconductor device Grant 10,714,598 - Wang , et al.	2020-07-14
Method Of Manufacturing Semiconductor Devices App 20200203507 - WANG; Tsan-Chun ; et al.	2020-06-25
Enhanced Channel Strain To Reduce Contact Resistance In Nmos Fet Devices App 20200135736 - LIN; Yu-Chang ; et al.	2020-04-30
Reduce Well Dopant Loss in FinFETs Through Co-Implantation App 20200135469 - Liu; Sih-Jie ; et al.	2020-04-30
Mask Formation by Selectively Removing Portions of a Layer That Have Not Been Implanted App 20200058505 - Chang; Tien-Shun ; et al.	2020-02-20
Method For Fabricating A Semiconductor Device App 20200051865 - WANG; Tsan-Chun ; et al.	2020-02-13
Method For Fabricating A Semiconductor Device App 20200051864 - WANG; Tsan-Chun ; et al.	2020-02-13
Formation Of Semiconductor Device Structure By Implantation App 20200020772 - WANG; Tsan-Chun ; et al.	2020-01-16
FinFET structures and methods of forming the same Grant 10,529,861 - Lin , et al. J	2020-01-07
Enhanced channel strain to reduce contact resistance in NMOS FET devices Grant 10,515,966 - Lin , et al. Dec	2019-12-24
Semiconductor structure and method for manufacturing the same Grant 10,510,619 - Lin , et al. Dec	2019-12-17
Mask formation by selectively removing portions of a layer that have not been implanted Grant 10,460,940 - Chang , et al. Oc	2019-10-29
Gradient Doped Region of Recessed Fin Forming a FinFET Device App 20190312143 - LIN; Jyun-Hao ; et al.	2019-10-10
Mask Formation By Selectively Removing Portions Of A Layer That Have Not Been Implanted App 20190287802 - CHANG; Tien-Shun ; et al.	2019-09-19
Method And Apparatus For Forming Semiconductor Structure App 20190252192 - WANG; TSAN-CHUN ; et al.	2019-08-15
FinFET device and methods of forming Grant 10,326,003 - Chen , et al.	2019-06-18
Semiconductor Structure And Method For Manufacturing The Same App 20190157163 - LIN; YU-CHANG ; et al.	2019-05-23
Semiconductor Device and Method of Manufacture App 20190088498 - Wang; Tsan-Chun ; et al.	2019-03-21
FinFET Device and Methods of Forming App 20190067458 - Lin; Yu-Chang ; et al.	2019-02-28
Method Of Manufacturing Semiconductor Device App 20190006492 - WANG; Tsan-Chun ; et al.	2019-01-03
Enhanced Channel Strain To Reduce Contact Resistance In Nmos Fet Devices App 20190006363 - LIN; Yu-Chang ; et al.	2019-01-03
Semiconductor device and method of manufacture Grant 10,163,657 - Wang , et al. Dec	2018-12-25
Method of forming ultra-shallow junctions in semiconductor devices Grant 10,128,115 - Nieh , et al. November 13, 2	2018-11-13
finFET device and methods of forming Grant 10,115,808 - Lin , et al. October 30, 2	2018-10-30
Enhanced channel strain to reduce contact resistance in NMOS FET devices Grant 10,056,383 - Lin , et al. August 21, 2	2018-08-21
High temperature intermittent ion implantation Grant 10,049,856 - Wu , et al. August 14, 2	2018-08-14
Finfet Device And Methods Of Forming App 20180151706 - Lin; Yu-Chang ; et al.	2018-05-31
FINFET Device and Methods of Forming App 20180151701 - Chen; Chia-Cheng ; et al.	2018-05-31
FinFET Structures and Methods of Forming the Same App 20180145177 - Lin; Yu-Chang ; et al.	2018-05-24
III-V multi-channel FinFETs Grant 9,741,800 - Lin , et al. August 22, 2	2017-08-22
Method of manufacturing strained source/drain structures Grant 9,698,057 - Nieh , et al. July 4, 2	2017-07-04
Enhanced Channel Strain To Reduce Contact Resistance In Nmos Fet Devices App 20170179130 - LIN; Yu-Chang ; et al.	2017-06-22
Semiconductor device and method of making Grant 9,653,581 - Lu , et al. May 16, 2	2017-05-16
Formation of high quality Fin in 3D structure by way of two-step implantation Grant 9,634,126 - Nieh , et al. April 25, 2	2017-04-25
Enhanced channel strain to reduce contact resistance in NMOS FET devices Grant 9,607,838 - Lin , et al. March 28, 2	2017-03-28
Enhanced Channel Strain To Reduce Contact Resistance In Nmos Fet Devices App 20170084741 - LIN; Yu-Chang ; et al.	2017-03-23
Methods for introducing carbon to a semiconductor structure and structures formed thereby Grant 9,525,024 - Su , et al. December 20, 2	2016-12-20
Formation Of High Quality Fin In 3d Structure By Way Of Two-step Implantation App 20160343831 - Nieh; Chun-Feng ; et al.	2016-11-24
High Temperature Intermittent Ion Implantation App 20160260580 - Wu; Hsin-Wei ; et al.	2016-09-08
Formation of high quality fin in 3D structure by way of two-step implantation Grant 9,425,290 - Nieh , et al. August 23, 2	2016-08-23
Method for improving selectivity of epi process Grant 9,373,695 - Chen , et al. June 21, 2	2016-06-21
Semiconductor Device And Method Of Making App 20160141394 - Lu; Wen-Tai ; et al.	2016-05-19
High temperature intermittent ion implantation Grant 9,343,312 - Wu , et al. May 17, 2	2016-05-17
Semiconductor device and method of making Grant 9,252,271 - Lu , et al. February 2, 2	2016-02-02
High Temperature Intermittent Ion Implantation App 20160027646 - Wu; Hsin-Wei ; et al.	2016-01-28
Fabrication of ultra-shallow junctions Grant 9,202,693 - Wang , et al. December 1, 2	2015-12-01
III-V Multi-Channel FinFETs App 20150340473 - Lin; Hung-Ta ; et al.	2015-11-26
Formation Of High Quality Fin In 3d Structure By Way Of Two-step Implantation App 20150340472 - Nieh; Chun-Feng ; et al.	2015-11-26
Methods for Introducing Carbon to a Semiconductor Structure and Structures Formed Thereby App 20150325644 - Su; Yu-Chen ; et al.	2015-11-12
Method of Manufacturing Strained Source/Drain Structures App 20150262886 - Nieh; Chun-Feng ; et al.	2015-09-17
Semiconductor device with conformal doping and method of making Grant 9,123,564 - Lin , et al. September 1, 2	2015-09-01
Formation of High Quality Fin in 3D Structure by Way of Two-Step Implantation App 20150228766 - Nieh; Chun-Feng ; et al.	2015-08-13
Methods for introducing carbon to a semiconductor structure Grant 9,105,570 - Su , et al. August 11, 2	2015-08-11
Formation of high quality fin in 3D structure by way of two-step implantation Grant 9,099,495 - Nieh , et al. August 4, 2	2015-08-04
III-V multi-channel FinFETs Grant 9,099,388 - Lin , et al. August 4, 2	2015-08-04
Semiconductor Device With Conformal Doping And Method Of Making App 20150162330 - Lin; Yu-Chang ; et al.	2015-06-11
Method of manufacturing strained source/drain structures Grant 9,048,253 - Nieh , et al. June 2, 2	2015-06-02
Semiconductor Device And Method Of Making App 20150145066 - Lu; Wen-Tai ; et al.	2015-05-28
Fabrication Of Ultra-shallow Junctions App 20140213047 - WANG; Li-Ting ; et al.	2014-07-31
Method of Manufacturing Strained Source/Drain Structures App 20140024188 - Nieh; Chun-Feng ; et al.	2014-01-23
Methods for Introducing Carbon to a Semiconductor Structure and Structures Formed Thereby App 20140015104 - Su; Yu-Chen ; et al.	2014-01-16
Junction leakage reduction through implantation Grant 8,629,013 - Nieh , et al. January 14, 2	2014-01-14
Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process Grant 8,629,037 - Nieh , et al. January 14, 2	2014-01-14
Method For Improving Selectivity Of EPI Process App 20130299876 - Chen; Kuan-Yu ; et al.	2013-11-14
Method of manufacturing strained source/drain structures Grant 8,569,139 - Nieh , et al. October 29, 2	2013-10-29
Method of making a FinFET device Grant 8,497,177 - Chang , et al. July 30, 2	2013-07-30
Method for improving selectivity of epi process Grant 8,487,354 - Chen , et al. July 16, 2	2013-07-16
Method For Forming High Mobility Channels In Iii-v Family Channel Devices App 20130137238 - NIEH; Chun-Feng ; et al.	2013-05-30
III-V Multi-Channel FinFETs App 20130099283 - Lin; Hung-Ta ; et al.	2013-04-25
Junction Leakage Reduction Through Implantation App 20130095642 - Nieh; Chun-Feng ; et al.	2013-04-18
Forming A Protective Film On A Back Side Of A Silicon Wafer In A Iii-v Family Fabrication Process App 20130078783 - Nieh; Chun-Feng ; et al.	2013-03-28
Multi-strained source/drain structures Grant 8,405,160 - Cheng , et al. March 26, 2	2013-03-26
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 8,404,546 - Woon , et al. March 26, 2	2013-03-26
Method of enhancing dopant activation without suffering additional dopant diffusion Grant 8,273,633 - Kuo , et al. September 25, 2	2012-09-25
Shallow junction formation and high dopant activation rate of MOS devices Grant 8,212,253 - Nieh , et al. July 3, 2	2012-07-03
Method Of Manufacturing Strained Source/drain Structures App 20120108026 - NIEH; Chun-Feng ; et al.	2012-05-03
Method Of Forming Ultra-shallow Junctions In Semiconductor Devices App 20120100686 - LU; Wei-Yuan ; et al.	2012-04-26
Shallow Junction Formation and High Dopant Activation Rate of MOS Devices App 20110316079 - Nieh; Chun-Feng ; et al.	2011-12-29
Multi-strained Source/drain Structures App 20110291201 - Cheng; Chun-Fai ; et al.	2011-12-01
Shallow junction formation and high dopant activation rate of MOS devices Grant 8,039,375 - Nieh , et al. October 18, 2	2011-10-18
High Temperature Implantation Method For Stressor Formation App 20110212590 - Wu; Chii-Ming ; et al.	2011-09-01
Method Of Forming Ultra-shallow Junctions In Semiconductor Devices App 20110212592 - NIEH; Chun-Feng ; et al.	2011-09-01
Method for obtaining quality ultra-shallow doped regions and device having same Grant 7,994,016 - Tsai , et al. August 9, 2	2011-08-09
Method For Obtaining Quality Ultra-shallow Doped Regions And Device Having Same App 20110111571 - TSAI; Chun Hsiung ; et al.	2011-05-12
Method For Improving Selectivity Of Epi Process App 20110042729 - Chen; Kuan-Yu ; et al.	2011-02-24
Reducing Local Mismatch of Devices Using Cryo-Implantation App 20110039390 - Nieh; Chun-Feng ; et al.	2011-02-17
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20110027955 - Woon; Wei-Yen ; et al.	2011-02-03
Source/drain carbon implant and RTA anneal, pre-SiGe deposition Grant 7,838,887 - Woon , et al. November 23, 2	2010-11-23
Semiconductor device having ultra-shallow and highly activated source/drain extensions Grant 7,741,699 - Ku , et al. June 22, 2	2010-06-22
Source/Drain Carbon Implant and RTA Anneal, Pre-SiGe Deposition App 20090273034 - Woon; Wei-Yen ; et al.	2009-11-05
Super anneal for process induced strain modulation Grant 7,528,028 - Liang , et al. May 5, 2	2009-05-05
Short channel effect engineering in MOS device using epitaxially carbon-doped silicon Grant 7,504,292 - Ku , et al. March 17, 2	2009-03-17
Profile confinement to improve transistor performance Grant 7,498,642 - Chen , et al. March 3, 2	2009-03-03
Advanced activation approach for MOS devices Grant 7,494,857 - Chen , et al. February 24, 2	2009-02-24
Junction leakage reduction in SiGe process by implantation Grant 7,482,211 - Nieh , et al. January 27, 2	2009-01-27
Shallow junction formation and high dopant activation rate of MOS devices App 20080293204 - Nieh; Chun-Feng ; et al.	2008-11-27
Method Of Enhancing Dopant Activation Without Suffering Additional Dopant Diffusion App 20080242039 - Ku; Keh-Chiang ; et al.	2008-10-02
Advanced activation approach for MOS devices App 20080160709 - Chen; Chien-Hao ; et al.	2008-07-03
Short channel effect engineering in MOS device using epitaxially carbon-doped silicon App 20080132019 - Ku; Keh-Chiang ; et al.	2008-06-05
Junction leakage reduction in SiGe process by implantation App 20070298565 - Nieh; Chun-Feng ; et al.	2007-12-27
Junction leakage reduction in SiGe process by tilt implantation App 20070298557 - Nieh; Chun-Feng ; et al.	2007-12-27
Ultra-shallow and highly activated source/drain extension formation using phosphorus App 20070284615 - Ku; Keh-Chiang ; et al.	2007-12-13
Shallow source/drain regions for CMOS transistors App 20070037326 - Chen; Chien-Hao ; et al.	2007-02-15
Method of forming a MOS device having a strained channel region App 20070010073 - Chen; Chien-Hao ; et al.	2007-01-11
Impurity co-implantation to improve transistor performance App 20060284249 - Chen; Chien-Hao ; et al.	2006-12-21
Super anneal for process induced strain modulation App 20060286758 - Liang; Mong Song ; et al.	2006-12-21
Method of forming the N-MOS and P-MOS gates of a CMOS semiconductor device App 20060263992 - Chen; Chien-Hao ; et al.	2006-11-23
Profile confinement to improve transistor performance App 20060244080 - Chen; Chien-Hao ; et al.	2006-11-02
Methods and systems for rapid thermal processing App 20060035477 - Mai; Karen ; et al.	2006-02-16
Method of fabricating stacked gate dielectric layer App 20040241948 - Nieh, Chun-Feng ; et al.	2004-12-02
Method of etching a metal line App 20040166691 - Nieh, Chun-Feng ; et al.	2004-08-26
Method of fabricating a shallow trench isolation structure App 20040142562 - Chen, Zhen-Long ; et al.	2004-07-22
Method of etching a low-k dielectric layer App 20040121604 - Nieh, Chun-Feng ; et al.	2004-06-24