| Patent | Date |
|---|
Actively tracking switching speed control and regulating switching speed of a power transistor during turn-on
Grant 11,444,613 - Li , et al. September 13, 2 | 2022-09-13 |
Semiconductor device having active and inactive semiconductor mesas
Grant 11,309,410 - Cotorogea , et al. April 19, 2 | 2022-04-19 |
Voltage-Controlled Switching Device with Resistive Path
App 20220102478 - Sandow; Christian Philipp ; et al. | 2022-03-31 |
Power semiconductor device
Grant 11,276,772 - Mauder , et al. March 15, 2 | 2022-03-15 |
Power semiconductor device
Grant 11,264,459 - Baburske , et al. March 1, 2 | 2022-03-01 |
Power Semiconductor Device Having Nanometer-Scale Structure
App 20220059650 - Mauder; Anton ; et al. | 2022-02-24 |
Semiconductor die, semiconductor device and IGBT module
Grant 11,257,914 - Van Treek , et al. February 22, 2 | 2022-02-22 |
Vertical Power Semiconductor Device And Manufacturing Method
App 20220013625 - Schulze; Hans-Joachim ; et al. | 2022-01-13 |
Power semiconductor device having fully depleted channel regions
Grant 11,171,202 - Mauder , et al. November 9, 2 | 2021-11-09 |
Semiconductor Component with Edge Termination Region
App 20210257489 - Mauder; Anton ; et al. | 2021-08-19 |
Method of manufacturing a semiconductor device comprising first and second field stop zone portions
Grant 11,081,544 - Schulze , et al. August 3, 2 | 2021-08-03 |
Insulated gate bipolar transistor device having a fin structure
Grant 11,038,016 - Sandow , et al. June 15, 2 | 2021-06-15 |
Actively tracking switching speed control of a power transistor
Grant 11,031,929 - Maier , et al. June 8, 2 | 2021-06-08 |
Semiconductor component with edge termination region
Grant 11,018,249 - Mauder , et al. May 25, 2 | 2021-05-25 |
Semiconductor Die, Semiconductor Device and IGBT Module
App 20210119003 - Van Treek; Vera ; et al. | 2021-04-22 |
Vertical semiconductor device
Grant 10,957,764 - Niedernostheide , et al. March 23, 2 | 2021-03-23 |
IGBT with fully depletable n- and p-channel regions
Grant 10,950,718 - Mauder , et al. March 16, 2 | 2021-03-16 |
Method for producing a semiconductor component having a channel stopper region
Grant 10,943,974 - Falck , et al. March 9, 2 | 2021-03-09 |
IGBT with fully depletable n- and p-channel regions
Grant 10,903,347 - Mauder , et al. January 26, 2 | 2021-01-26 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20200350402 - Sandow; Christian Philipp ; et al. | 2020-11-05 |
Semiconductor Device Having Active and Inactive Semiconductor Mesas
App 20200295168 - Cotorogea; Maria ; et al. | 2020-09-17 |
Insulated gate bipolar Transistor device having a fin structure
Grant 10,748,995 - Sandow , et al. A | 2020-08-18 |
Power Semiconductor Device
App 20200259007 - A1 | 2020-08-13 |
Power Semiconductor Device
App 20200194550 - Baburske; Roman ; et al. | 2020-06-18 |
Semiconductor device having an active trench and a body trench
Grant 10,680,089 - Cotorogea , et al. | 2020-06-09 |
Power semiconductor device having different channel regions
Grant 10,672,767 - Mauder , et al. | 2020-06-02 |
Power semiconductor transistor
Grant 10,665,706 - Mauder , et al. | 2020-05-26 |
Method of forming a semiconductor device
Grant 10,580,653 - Niedernostheide , et al. | 2020-03-03 |
Bipolar semiconductor device and manufacturing method
Grant 10,566,462 - Schulze , et al. Feb | 2020-02-18 |
Power Semiconductor Device Having Different Channel Regions
App 20190371794 - Mauder; Anton ; et al. | 2019-12-05 |
Transistor device with high current robustness
Grant 10,483,384 - Bhojani , et al. Nov | 2019-11-19 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20190333991 - Sandow; Christian Philipp ; et al. | 2019-10-31 |
Transistor device
Grant 10,461,739 - Basler , et al. Oc | 2019-10-29 |
Power semiconductor device having cells with channel regions of different conductivity types
Grant 10,453,918 - Mauder , et al. Oc | 2019-10-22 |
Semiconductor Device Having an Active Trench and a Body Trench
App 20190319123 - Cotorogea; Maria ; et al. | 2019-10-17 |
Power Semiconductor Transistor
App 20190296135 - Mauder; Anton ; et al. | 2019-09-26 |
Transistor device
Grant 10,404,250 - Basler , et al. Sep | 2019-09-03 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20190267447 - Mauder; Anton ; et al. | 2019-08-29 |
Power semiconductor device having different channel regions
Grant 10,396,074 - Mauder , et al. A | 2019-08-27 |
Semiconductor device having an active trench and a body trench
Grant 10,388,776 - Cotorogea , et al. A | 2019-08-20 |
Semiconductor Component with Edge Termination Region
App 20190237575 - Mauder; Anton ; et al. | 2019-08-01 |
Power semiconductor device having fully depleted channel regions
Grant 10,367,057 - Mauder , et al. July 30, 2 | 2019-07-30 |
Power semiconductor device having fully depleted channel regions
Grant 10,340,336 - Mauder , et al. | 2019-07-02 |
Method for Producing a Semiconductor Component Having a Channel Stopper Region
App 20190198610 - Falck; Elmar ; et al. | 2019-06-27 |
IGBT with Fully Depletable n- and p-Channel Regions
App 20190189789 - Mauder; Anton ; et al. | 2019-06-20 |
Power semiconductor transistor having fully depleted channel region
Grant 10,326,009 - Mauder , et al. | 2019-06-18 |
Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions
App 20190165090 - Schulze; Hans-Joachim ; et al. | 2019-05-30 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20190109188 - Mauder; Anton ; et al. | 2019-04-11 |
Semiconductor Device Having an Active Trench and a Body Trench
App 20190103480 - Cotorogea; Maria ; et al. | 2019-04-04 |
Bipolar transistor with superjunction structure
Grant 10,249,746 - Pfirsch , et al. | 2019-04-02 |
Power Semiconductor Device Having Cells with Channel Regions of Different Conductivity Types
App 20190081142 - Mauder; Anton ; et al. | 2019-03-14 |
Bipolar transistor device with an emitter having two types of emitter regions
Grant 10,224,206 - Baburske , et al. | 2019-03-05 |
Semiconductor device including at least one type of deep-level dopant
Grant 10,177,230 - Voss , et al. J | 2019-01-08 |
Power Semiconductor Device Having Different Channel Regions
App 20180366464 - Mauder; Anton ; et al. | 2018-12-20 |
Power semiconductor device having fully depleted channel region
Grant 10,141,404 - Mauder , et al. Nov | 2018-11-27 |
Power semiconductor device having fully depleted channel regions
Grant 10,134,835 - Mauder , et al. November 20, 2 | 2018-11-20 |
Semiconductor device having an active trench and a body trench
Grant 10,134,885 - Cotorogea , et al. November 20, 2 | 2018-11-20 |
Semiconductor device comprising transistor cell units with different threshold voltages
Grant 10,109,624 - Bina , et al. October 23, 2 | 2018-10-23 |
Power semiconductor device having fully depleted channel regions
Grant 10,083,960 - Mauder , et al. September 25, 2 | 2018-09-25 |
Transistor Device
App 20180269871 - BASLER; Thomas ; et al. | 2018-09-20 |
Transistor Device
App 20180269872 - BASLER; Thomas ; et al. | 2018-09-20 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20180269285 - Sandow; Christian Philipp ; et al. | 2018-09-20 |
Semiconductor diode with trench structures and including doped layers and doped zones of opposite conductivity types providing high surge energy capacity
Grant 10,069,016 - Mauder , et al. September 4, 2 | 2018-09-04 |
Power semiconductor device having fully depleted channel regions
Grant 9,997,517 - Mauder , et al. June 12, 2 | 2018-06-12 |
Bipolar Transistor With Superjunction Structure
App 20180158937 - PFIRSCH; Frank Dieter ; et al. | 2018-06-07 |
Insulated gate bipolar transistor device having a fin structure
Grant 9,978,837 - Sandow , et al. May 22, 2 | 2018-05-22 |
Power Semiconductor Transistor Having Fully Depleted Channel Region
App 20180138301 - Mauder; Anton ; et al. | 2018-05-17 |
Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area
Grant 9,947,741 - Schulze , et al. April 17, 2 | 2018-04-17 |
Bipolar transistor with superjunction structure
Grant 9,917,181 - Pfirsch , et al. March 13, 2 | 2018-03-13 |
Transistor Device with High Current Robustness
App 20180061971 - Bhojani; Riteshkumar ; et al. | 2018-03-01 |
Insulated gate semiconductor device with soft switching behavior
Grant 9,899,377 - Schulze , et al. February 20, 2 | 2018-02-20 |
Method of manufacturing a bipolar semiconductor switch
Grant 9,882,038 - Schulze , et al. January 30, 2 | 2018-01-30 |
Semiconductor component including a short-circuit structure
Grant 9,876,004 - Schulze , et al. January 23, 2 | 2018-01-23 |
Bipolar Transistor Device With an Emitter Having Two Types of Emitter Regions
App 20180012764 - Baburske; Roman ; et al. | 2018-01-11 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006110 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006027 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006109 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Regions
App 20180006029 - Mauder; Anton ; et al. | 2018-01-04 |
Power Semiconductor Device Having Fully Depleted Channel Region
App 20180006115 - Mauder; Anton ; et al. | 2018-01-04 |
Semiconductor device with a reduced band gap zone
Grant 9,859,272 - Schulze , et al. January 2, 2 | 2018-01-02 |
Power semiconductor transistor having fully depleted channel region
Grant 9,859,408 - Mauder , et al. January 2, 2 | 2018-01-02 |
Semiconductor component and integrated circuit
Grant 9,825,136 - Niedernostheide , et al. November 21, 2 | 2017-11-21 |
Semiconductor devices
Grant 9,819,341 - Sandow , et al. November 14, 2 | 2017-11-14 |
Semiconductor Device Comprising Transistor Cell Units With Different Threshold Voltages
App 20170309619 - Bina; Markus ; et al. | 2017-10-26 |
Semiconductor Device Having an Active Trench and a Body Trench
App 20170250271 - Cotorogea; Maria ; et al. | 2017-08-31 |
Bipolar transistor device with an emitter having two types of emitter regions
Grant 9,741,571 - Baburske , et al. August 22, 2 | 2017-08-22 |
IGBT having at least one first type transistor cell and reduced feedback capacitance
Grant 9,741,795 - Sandow , et al. August 22, 2 | 2017-08-22 |
Method of Manufacturing a Bipolar Semiconductor Switch
App 20170179268 - Schulze; Hans-Joachim ; et al. | 2017-06-22 |
Semiconductor device having an active trench and a body trench
Grant 9,680,005 - Cotorogea , et al. June 13, 2 | 2017-06-13 |
Field-Effect Semiconductor Device Having Pillar Regions of Different Conductivity Type Arranged in an Active Area
App 20170148872 - Schulze; Hans-Joachim ; et al. | 2017-05-25 |
Method Of Forming A Semiconductor Device
App 20170140938 - NIEDERNOSTHEIDE; Franz-Josef ; et al. | 2017-05-18 |
Semiconductor device with auxiliary structure including deep level dopants
Grant 9,647,100 - Schulze , et al. May 9, 2 | 2017-05-09 |
Insulated Gate Semiconductor Device With Soft Switching Behavior
App 20170125407 - SCHULZE; Hans-Joachim ; et al. | 2017-05-04 |
Bipolar Transistor With Superjunction Structure
App 20170117394 - PFIRSCH; Frank Dieter ; et al. | 2017-04-27 |
Power Semiconductor Transistor Having Fully Depleted Channel Region
App 20170117397 - Mauder; Anton ; et al. | 2017-04-27 |
Bipolar semiconductor switch and a manufacturing method therefor
Grant 9,627,517 - Schulze , et al. April 18, 2 | 2017-04-18 |
Insulated Gate Bipolar Transistor Device Having a Fin Structure
App 20170084692 - Sandow; Christian Philipp ; et al. | 2017-03-23 |
Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
Grant 9,570,607 - Schulze , et al. February 14, 2 | 2017-02-14 |
Semiconductor Devices
App 20170033794 - Sandow; Christian Philipp ; et al. | 2017-02-02 |
Semiconductor Device with a Reduced Band Gap Zone
App 20170025408 - Schulze; Hans-Joachim ; et al. | 2017-01-26 |
Increasing the doping efficiency during proton irradiation
Grant 9,536,740 - Schulze , et al. January 3, 2 | 2017-01-03 |
Insulated gate bipolar transistor device, semiconductor device and method for forming said devices
Grant 9,525,029 - Sandow , et al. December 20, 2 | 2016-12-20 |
Bipolar Transistor Device With an Emitter Having Two Types of Emitter Regions
App 20160284803 - Baburske; Roman ; et al. | 2016-09-29 |
Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex
Grant 9,412,824 - Neidhart , et al. August 9, 2 | 2016-08-09 |
Insulated gate bipolar transistor
Grant 9,373,710 - Van Treek , et al. June 21, 2 | 2016-06-21 |
Semiconductor Component Including A Short-circuit Structure
App 20160155735 - Schulze; Hans-Joachim ; et al. | 2016-06-02 |
Semiconductor Device with Auxiliary Structure Including Deep Level Dopants
App 20160111528 - Schulze; Hans-Joachim ; et al. | 2016-04-21 |
Field-Effect Semiconductor Device Having Alternating N-Type and P-Type Pillar Regions Arranged in an Active Area
App 20160064554 - Schulze; Hans-Joachim ; et al. | 2016-03-03 |
Semiconductor component including a short-circuit structure
Grant 9,269,769 - Schulze , et al. February 23, 2 | 2016-02-23 |
Semiconductor body with strained monocrystalline region
Grant 9,245,943 - Schulze , et al. January 26, 2 | 2016-01-26 |
IGBT Having at Least One First Type Transistor Cell and Reduced Feedback Capacitance
App 20160005818 - Sandow; Christian Philipp ; et al. | 2016-01-07 |
Insulated Gate Bipolar Transistor Device, Semiconductor Device and Method for Forming Said Devices
App 20150380533 - Sandow; Christian Philipp ; et al. | 2015-12-31 |
Charge compensation semiconductor devices
Grant 9,209,292 - Schulze , et al. December 8, 2 | 2015-12-08 |
Semiconductor Device Having an Active Trench and a Body Trench
App 20150349116 - Cotorogea; Maria ; et al. | 2015-12-03 |
Insulated Gate Bipolar Transistor
App 20150333161 - Van Treek; Vera ; et al. | 2015-11-19 |
Vertical Semiconductor Device
App 20150303260 - Niedernostheide; Franz Josef ; et al. | 2015-10-22 |
IGBT with reduced feedback capacitance
Grant 9,166,027 - Sandow , et al. October 20, 2 | 2015-10-20 |
Semiconductor Device Including at Least One Type of Deep-Level Dopant
App 20150270347 - Voss; Stephan ; et al. | 2015-09-24 |
Semiconductor device
Grant 9,142,655 - Cotorogea , et al. September 22, 2 | 2015-09-22 |
Semiconductor Component And Integrated Circuit
App 20150263106 - Niedernostheide; Franz Josef ; et al. | 2015-09-17 |
Increasing The Doping Efficiency During Proton Irradiation
App 20150235853 - Schulze; Hans-Joachim ; et al. | 2015-08-20 |
Semiconductor component with improved dynamic behavior
Grant 9,105,682 - Felsl , et al. August 11, 2 | 2015-08-11 |
Semiconductor Body with Strained Monocrystalline Region
App 20150221719 - Schulze; Hans-Joachim ; et al. | 2015-08-06 |
Semiconductor device including first and second semiconductor materials
Grant 9,082,741 - Voss , et al. July 14, 2 | 2015-07-14 |
Increasing the doping efficiency during proton irradiation
Grant 9,054,035 - Schulze , et al. June 9, 2 | 2015-06-09 |
Semiconductor device with laterally varying doping concentrations
Grant 9,054,151 - Schulze , et al. June 9, 2 | 2015-06-09 |
Semiconductor Component Having A Dopant Region Formed By A Dopant Composed Of An Oxygen / Vacancy Complex
App 20150123247 - Neidhart; Thomas ; et al. | 2015-05-07 |
Semiconductor Diode with Trench Structures
App 20150097262 - Mauder; Anton ; et al. | 2015-04-09 |
IGBT with Reduced Feedback Capacitance
App 20150091053 - Sandow; Christian Philipp ; et al. | 2015-04-02 |
Charge Compensation Semiconductor Devices
App 20150021670 - Schulze; Hans-Joachim ; et al. | 2015-01-22 |
Semiconductor device with trench structures including a recombination structure and a fill structure
Grant 8,921,931 - Mauder , et al. December 30, 2 | 2014-12-30 |
Semiconductor device having two monocrystalline semiconductor regions with a different lattice constant and a strained semiconductor region between
Grant 8,889,531 - Schulze , et al. November 18, 2 | 2014-11-18 |
Semiconductor device having a floating semiconductor zone
Grant 8,872,264 - Pfirsch , et al. October 28, 2 | 2014-10-28 |
Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body
Grant 8,859,409 - Neidhart , et al. October 14, 2 | 2014-10-14 |
Semiconductor Device
App 20140264432 - Cotorogea; Maria ; et al. | 2014-09-18 |
Semiconductor device including a dielectric structure in a trench
Grant 8,829,562 - Schulze , et al. September 9, 2 | 2014-09-09 |
Bipolar Semiconductor Switch and a Manufacturing Method Therefor
App 20140217463 - Schulze; Hans-Joachim ; et al. | 2014-08-07 |
Increasing The Doping Efficiency During Proton Irradiation
App 20140151858 - Schulze; Hans-Joachim ; et al. | 2014-06-05 |
Method for fabricating a semiconductor having a graded pn junction
Grant 8,741,750 - Hille , et al. June 3, 2 | 2014-06-03 |
Vertical semiconductor device
Grant 8,653,556 - Niedernostheide , et al. February 18, 2 | 2014-02-18 |
Semiconductor Device with Laterally Varying Doping Concentrations
App 20140034998 - Schulze; Hans-Joachim ; et al. | 2014-02-06 |
Semiconductor Device Including a Dielectric Structure in a Trench
App 20140027812 - Schulze; Hans-Joachim ; et al. | 2014-01-30 |
Integrated circuit having doped semiconductor body and method
Grant 8,637,328 - Pfirsch , et al. January 28, 2 | 2014-01-28 |
Semiconductor Device with Trench Structures
App 20130320487 - Mauder; Anton ; et al. | 2013-12-05 |
Semiconductor Device Including First and Second Semiconductor Materials
App 20130307018 - Voss; Stephan ; et al. | 2013-11-21 |
Method for forming laterally varying doping concentrations and a semiconductor device
Grant 8,587,025 - Schulze , et al. November 19, 2 | 2013-11-19 |
Semiconductor Device Having A Floating Semiconductor Zone
App 20130270632 - Pfirsch; Frank ; et al. | 2013-10-17 |
Semiconductor Component Comprising A Dopant Region In A Semiconductor Body And A Method For Producing A Dopant Region In A Semiconductor Body
App 20130249058 - Neidhart; Thomas ; et al. | 2013-09-26 |
Semiconductor device having a floating semiconductor zone
Grant 8,482,062 - Pfirsch , et al. July 9, 2 | 2013-07-09 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
Grant 8,415,710 - Schulze , et al. April 9, 2 | 2013-04-09 |
Semiconductor device and fabrication method
Grant 8,367,532 - Mauder , et al. February 5, 2 | 2013-02-05 |
Semiconductor Device Having A Floating Semiconductor Zone
App 20130001640 - Pfirsch; Frank ; et al. | 2013-01-03 |
Semiconductor device with a field stop zone and process of producing the same
Grant 8,343,862 - Schulze , et al. January 1, 2 | 2013-01-01 |
Integrated Circuit Having Doped Semiconductor Body And Method
App 20120313225 - Pfirsch; Frank ; et al. | 2012-12-13 |
Semiconductor Device And Fabrication Method
App 20120315747 - MAUDER; Anton ; et al. | 2012-12-13 |
Semiconductor device having a floating semiconductor zone
Grant 8,264,033 - Pfirsch , et al. September 11, 2 | 2012-09-11 |
Semiconductor Component with Improved Dynamic Behavior
App 20120217539 - Felsl; Hans Peter ; et al. | 2012-08-30 |
Semiconductor device and fabrication method
Grant 8,252,671 - Mauder , et al. August 28, 2 | 2012-08-28 |
Integrated circuit having doped semiconductor body and method
Grant 8,236,676 - Pfirsch , et al. August 7, 2 | 2012-08-07 |
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
Grant 8,178,411 - Barthelmess , et al. May 15, 2 | 2012-05-15 |
Semiconductor body with strained region
App 20120112242 - Schulze; Hans-Joachim ; et al. | 2012-05-10 |
Igbt Module And A Circuit
App 20120098097 - Felsl; Hans-Peter ; et al. | 2012-04-26 |
Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component
Grant 8,101,506 - Schulze , et al. January 24, 2 | 2012-01-24 |
Semiconductor Device And Fabrication Method
App 20110275202 - MAUDER; Anton ; et al. | 2011-11-10 |
Semiconductor element
Grant 8,035,195 - Niedernostheide , et al. October 11, 2 | 2011-10-11 |
Method of fabricating a diode
Grant 8,034,700 - Schulze , et al. October 11, 2 | 2011-10-11 |
Semiconductor Device With A Field Stop Zone And Process Of Producing The Same
App 20110207310 - Schulze; Hans-Joachim ; et al. | 2011-08-25 |
Semiconductor device and fabrication method
Grant 8,003,502 - Mauder , et al. August 23, 2 | 2011-08-23 |
Semiconductor device with a field stop zone and process of producing the same
Grant 7,989,888 - Schulze , et al. August 2, 2 | 2011-08-02 |
Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method
App 20110127576 - Schulze; Hans-Joachim ; et al. | 2011-06-02 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
Grant 7,884,389 - Schulze , et al. February 8, 2 | 2011-02-08 |
Semiconductor Device Having A Floating Semiconductor Zone
App 20110018029 - Pfirsch; Frank ; et al. | 2011-01-27 |
Method for manufacturing a semiconductor substrate including laser annealing
Grant 7,842,590 - Gutt , et al. November 30, 2 | 2010-11-30 |
Semiconductor component with high concentration doped zone embedded in emitter region
Grant 7,838,970 - Schulze , et al. November 23, 2 | 2010-11-23 |
Diode
Grant 7,838,969 - Schulze , et al. November 23, 2 | 2010-11-23 |
High speed diode
Grant 7,812,368 - Schulze , et al. October 12, 2 | 2010-10-12 |
Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
Grant 7,749,876 - Barthelmess , et al. July 6, 2 | 2010-07-06 |
Method For Producing A Buried N-doped Semiconductor Zone In A Semiconductor Body And Semiconductor Component
App 20100167509 - Schulze; Hans-Joachim ; et al. | 2010-07-01 |
Method Of Fabricating A Diode
App 20100136774 - Schulze; Hans-Joachim ; et al. | 2010-06-03 |
Thyristor which can be triggered electrically and by radiation
Grant 7,696,528 - Kellner-Werdehausen , et al. April 13, 2 | 2010-04-13 |
Method For Fabricating A Semiconductor Having A Graded Pn Junction
App 20100087053 - Hille; Frank ; et al. | 2010-04-08 |
Thyristor with recovery protection
Grant 7,687,826 - Schulze , et al. March 30, 2 | 2010-03-30 |
Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component
Grant 7,675,108 - Schulze , et al. March 9, 2 | 2010-03-09 |
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
Grant 7,667,297 - Barthelmess , et al. February 23, 2 | 2010-02-23 |
Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone
App 20100015818 - Barthelmess; Reiner ; et al. | 2010-01-21 |
Vertical semiconductor device having semiconductor zones for improved operability under dynamic processes
Grant 7,649,244 - Niedernostheide , et al. January 19, 2 | 2010-01-19 |
Method For Manufacturing A Semiconductor Substrate Including Laser Annealing
App 20090267200 - Gutt; Thomas ; et al. | 2009-10-29 |
Vertical Semiconductor Device
App 20090212322 - Niedernostheide; Franz Josef ; et al. | 2009-08-27 |
Semiconductor device and Fabrication method
App 20090186462 - Mauder; Anton ; et al. | 2009-07-23 |
Reverse conducting IGBT with vertical carrier lifetime adjustment
Grant 7,557,386 - Ruething , et al. July 7, 2 | 2009-07-07 |
Semiconductor Component Including A Short-circuit Structure
App 20090140290 - Schulze; Hans-Joachim ; et al. | 2009-06-04 |
Semiconductor device with a field stop zone
Grant 7,538,412 - Schulze , et al. May 26, 2 | 2009-05-26 |
Thyristor arrangement with turnoff protection
Grant 7,521,730 - Niedernostheide , et al. April 21, 2 | 2009-04-21 |
Semiconductor device and fabrication method suitable therefor
Grant 7,514,750 - Mauder , et al. April 7, 2 | 2009-04-07 |
Semiconductor diode and production method suitable therefor
Grant 7,511,353 - Mauder , et al. March 31, 2 | 2009-03-31 |
Thyristor And Methods For Producing A Thyristor
App 20090057714 - Schulze; Hans-Joachim ; et al. | 2009-03-05 |
Method for producing semiconductor elements
Grant 7,485,550 - Mauder , et al. February 3, 2 | 2009-02-03 |
Semiconductor Element
App 20080290466 - Niedernostheide; Franz Josef ; et al. | 2008-11-27 |
Diode
App 20080173968 - Schulze; Hans-Joachim ; et al. | 2008-07-24 |
Method for the Production of a Buried Stop Zone in a Semiconductor Component and Semiconductor Component Comprising a Buried Stop Zone
App 20080160732 - Barthelmess; Reiner ; et al. | 2008-07-03 |
Integrated Circuit Having Doped Semiconductor Body And Method
App 20080122001 - Pfirsch; Frank ; et al. | 2008-05-29 |
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
Grant 7,361,970 - Barthelmess , et al. April 22, 2 | 2008-04-22 |
Semiconductor Device With A Field Stop Zone And Process Of Producing The Same
App 20080054369 - Schulze; Hans-Joachim ; et al. | 2008-03-06 |
Semiconductor device with a field stop zone
App 20080001257 - Schulze; Hans-Joachim ; et al. | 2008-01-03 |
Reverse conducting IGBT with vertical carrier lifetime adjustment
App 20070231973 - Ruething; Holger ; et al. | 2007-10-04 |
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
App 20070215981 - Schulze; Hans-Joachim ; et al. | 2007-09-20 |
Method for fabricating a semiconductor having a field zone
Grant 7,268,079 - Falck , et al. September 11, 2 | 2007-09-11 |
Thyristor Which Can Be Triggered Electrically And By Radiation, And Methods For Making Contact With It
App 20070131963 - Kellner-Werdehausen; Uwe ; et al. | 2007-06-14 |
Vertical semiconductor device
App 20070120170 - Niedernostheide; Franz Josef ; et al. | 2007-05-31 |
Method for production of deep p regions in silicon, and semiconductor components produced using the method
Grant 7,195,994 - Schulze , et al. March 27, 2 | 2007-03-27 |
Thyristor with recovery protection
App 20070051972 - Schulze; Hans-Joachim ; et al. | 2007-03-08 |
High speed diode
App 20070029634 - Schulze; Hans-Joachim ; et al. | 2007-02-08 |
Diode
App 20070007587 - Barthelmess; Reiner ; et al. | 2007-01-11 |
Method for Producing a Stop Zone in a Semiconductor Body and Semiconductor Component Having a Stop Zone
App 20060286753 - Barthelmess; Reiner ; et al. | 2006-12-21 |
Thyristor with integrated resistance and method for producing it
App 20060267104 - Scholz; Detlef ; et al. | 2006-11-30 |
Semiconductor device and fabrication method suitable therefor
App 20060081923 - Mauder; Anton ; et al. | 2006-04-20 |
Method for fabricating field rings
App 20060051923 - Falck; Elmar ; et al. | 2006-03-09 |
Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component
App 20060043470 - Schulze; Hans-Joachim ; et al. | 2006-03-02 |
Method for producing semiconductor elements
App 20060030126 - Mauder; Anton ; et al. | 2006-02-09 |
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
App 20050280076 - Barthelmess, Reiner ; et al. | 2005-12-22 |
Thyristor component with improved blocking capabilities in the reverse direction
App 20050258448 - Barthelmess, Reiner ; et al. | 2005-11-24 |
Semiconductor component
App 20050258455 - Schulze, Hans-Joachim ; et al. | 2005-11-24 |
Semiconductor component
Grant 6,963,088 - Kellner-Werdehausen , et al. November 8, 2 | 2005-11-08 |
Method for production of deep p regions in silicon, and semiconductor components produced using the method
App 20050164476 - Schulze, Hans-Joachim ; et al. | 2005-07-28 |
Semiconductor diode and production method suitable therefor
App 20050116249 - Mauder, Anton ; et al. | 2005-06-02 |
Semiconductor component
App 20040169256 - Kellner-Werdehausen, Uwe ; et al. | 2004-09-02 |
Thyristor with recovery time voltage surge resistance
Grant 6,727,526 - Niedernostheide , et al. April 27, 2 | 2004-04-27 |
Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor
Grant 6,723,586 - Niedernostheide , et al. April 20, 2 | 2004-04-20 |
Method for setting the breakover voltage of a thyristor
App 20020022306 - Schulze, Hans-Joachim ; et al. | 2002-02-21 |
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