Ni; Guang Xin
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ni; Guang Xin.The latest application filed is for "gate-tunable graphene-ferroelectric hybrid structure for photonics and plasmonics".
- Ni; Guang Xin - Singapore SG
| Patent | Date |
|---|---|
| Gate-tunable graphene-ferroelectric hybrid structure for photonics and plasmonics Grant 9,184,553 - Ozyilmaz , et al. November 10, 2 | 2015-11-10 |
| Transparent conductor Grant 9,082,523 - Ozyilmaz , et al. July 14, 2 | 2015-07-14 |
| Gate-Tunable Graphene-Ferroelectric Hybrid Structure for Photonics and Plasmonics App 20150155681 - Ozyilmaz; Barbaros ; et al. | 2015-06-04 |
| Transparent Conductor App 20140193626 - Ozyilmaz; Barbaros ; et al. | 2014-07-10 |
| Graphene Memory Cell and Fabrication Methods Thereof App 20110170330 - Oezyilmaz; Barbaros ; et al. | 2011-07-14 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.
| 