loadpatents
name:-0.049502849578857
name:-0.043319940567017
name:-0.0061719417572021
Nguyen; Paul P. Patent Filings

Nguyen; Paul P.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nguyen; Paul P..The latest application filed is for "system and method for applying material to a stent".

Company Profile
5.36.34
  • Nguyen; Paul P. - San Jose CA
  • Nguyen; Paul P. - Torrance CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Electrochromic devices and method for forming such devices
Grant 10,788,722 - Nguyen , et al. September 29, 2
2020-09-29
Charge assisted spray deposition method and apparatus
Grant 10,654,056 - Nguyen , et al.
2020-05-19
System And Method For Applying Material To A Stent
App 20200060813 - Nguyen; Paul P. ;   et al.
2020-02-27
Electrochromic device and method for making electrochromic device
Grant 10,564,506 - Nguyen , et al. Feb
2020-02-18
System and method for applying material to a stent
Grant 10,456,245 - Nguyen , et al. Oc
2019-10-29
Electrochromic Device And Method For Making Electrochromic Device
App 20180307110 - Nguyen; Paul P. ;   et al.
2018-10-25
System And Method For Applying Material To A Stent
App 20170325976 - Nguyen; Paul P. ;   et al.
2017-11-16
Electrochromic Devices And Method For Forming Such Devices
App 20170075182 - NGUYEN; Paul P. ;   et al.
2017-03-16
Electrochromic Device And Method For Making Electrochromic Device
App 20150077827 - Nguyen; Paul P. ;   et al.
2015-03-19
Electrochromic device and method for making electrochromic device
Grant 8,842,357 - Nguyen , et al. September 23, 2
2014-09-23
Reflection-controllable electrochromic device using a base metal as a transparent conductor
Grant 8,031,389 - Wang , et al. October 4, 2
2011-10-04
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-plane Equilibrium Magnetization
App 20110140217 - Nguyen; Paul P. ;   et al.
2011-06-16
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-plane Equilibrium Magnetization
App 20110012215 - Nguyen; Paul P. ;   et al.
2011-01-20
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization
Grant 7,821,088 - Nguyen , et al. October 26, 2
2010-10-26
Electrochromic thin-film material
Grant 7,804,635 - Wang , et al. September 28, 2
2010-09-28
Electrochromic Thin-film Material
App 20100238535 - Wang; Zhongchun ;   et al.
2010-09-23
Electrochromic Device And Method For Making Electrochromic Device
App 20100165440 - Nguyen; Paul P. ;   et al.
2010-07-01
Electrochromic devices based on lithium insertion
Grant 7,715,082 - Wang , et al. May 11, 2
2010-05-11
Reflection-Controllable Electrochromic Device Using A Base Metal As A Transparent Conductor
App 20100079845 - Wang; Zhongchun ;   et al.
2010-04-01
Electrical characteristics of electrochromic devices
Grant 7,679,810 - Fuss , et al. March 16, 2
2010-03-16
Durable reflection-controllable electrochromic thin film material
Grant 7,646,526 - Wang , et al. January 12, 2
2010-01-12
Electrical Characteristics Of Electrochromic Devices
App 20090323161 - Fuss; Eugene Anthony ;   et al.
2009-12-31
Electrochromic Devices Based on Lithium Insertion
App 20090323158 - Wang; Zhongchun ;   et al.
2009-12-31
Spin Torque Transfer Magnetic Memory Cell
App 20090302403 - Nguyen; Paul P.
2009-12-10
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
Grant 7,531,882 - Nguyen , et al. May 12, 2
2009-05-12
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
Grant 7,495,303 - Diao , et al. February 24, 2
2009-02-24
Spin Transfer Magnetic Element With Free Layers Having High Perpendicular Anisotropy And In-plan Equilibrium Magnetization
App 20080230819 - Nguyen; Paul P. ;   et al.
2008-09-25
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
Grant 7,369,427 - Diao , et al. May 6, 2
2008-05-06
Magnetoresistive/inductive write head assembly formed with seed layers having a uniform thickness
Grant 7,362,543 - Hsiao , et al. April 22, 2
2008-04-22
Magnetoresistive element having reduced spin transfer induced noise
Grant 7,245,462 - Huai , et al. July 17, 2
2007-07-17
Spin Transfer Magnetic Element Having Low Saturation Magnetization Free Layers
App 20070159734 - Nguyen; Paul P. ;   et al.
2007-07-12
Spin transfer magnetic element having low saturation magnetization free layers
Grant 7,242,045 - Nguyen , et al. July 10, 2
2007-07-10
Spin transfer magnetic elements with spin depolarization layers
Grant 7,233,039 - Huai , et al. June 19, 2
2007-06-19
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
Grant 7,227,773 - Nguyen , et al. June 5, 2
2007-06-05
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
App 20070120211 - Diao; Zhitao ;   et al.
2007-05-31
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
Grant 7,190,611 - Nguyen , et al. March 13, 2
2007-03-13
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
Grant 7,161,829 - Huai , et al. January 9, 2
2007-01-09
Magnetic element utilizing spin transfer and an mram device using the magnetic element
Grant 7,106,624 - Huai , et al. September 12, 2
2006-09-12
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
App 20060081953 - Nguyen; Paul P. ;   et al.
2006-04-20
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
App 20060049472 - Diao; Zhitao ;   et al.
2006-03-09
Three-terminal magnetostatically coupled spin transfer-based MRAM cell
Grant 7,009,877 - Huai , et al. March 7, 2
2006-03-07
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
Grant 6,992,359 - Nguyen , et al. January 31, 2
2006-01-31
Magnetic memory element utilizing spin transfer switching and storing multiple bits
Grant 6,985,385 - Nguyen , et al. January 10, 2
2006-01-10
Spin transfer magnetic elements with spin depolarization layers
App 20050237787 - Huai, Yiming ;   et al.
2005-10-27
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element
Grant 6,958,927 - Nguyen , et al. October 25, 2
2005-10-25
Method of depositing material into high aspect ratio features
Grant 6,948,231 - Hsiao , et al. September 27, 2
2005-09-27
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
App 20050201023 - Huai, Yiming ;   et al.
2005-09-15
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
App 20050189574 - Nguyen, Paul P. ;   et al.
2005-09-01
Method of depositing material into high aspect ratio features
App 20050185334 - Hsiao, Richard ;   et al.
2005-08-25
Spin transfer magnetic element having low saturation magnetization free layers
App 20050184839 - Nguyen, Paul P. ;   et al.
2005-08-25
Methods for providing a sub .15 micron magnetic memory structure
Grant 6,933,155 - Albert , et al. August 23, 2
2005-08-23
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,920,063 - Huai , et al. July 19, 2
2005-07-19
Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,888,742 - Nguyen , et al. May 3, 2
2005-05-03
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
App 20050063222 - Huai, Yiming ;   et al.
2005-03-24
Magnetic memory element utilizing spin transfer switching and storing multiple bits
App 20050045913 - Nguyen, Paul P. ;   et al.
2005-03-03
Magnetoresistive element having reduced spin transfer induced noise
App 20050041342 - Huai, Yiming ;   et al.
2005-02-24
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,847,547 - Albert , et al. January 25, 2
2005-01-25
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,838,740 - Huai , et al. January 4, 2
2005-01-04
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,829,161 - Huai , et al. December 7, 2
2004-12-07
Methos For Providing A Sub .15 Micron Magnetic Memory Structure
App 20040235201 - Albert, Frank ;   et al.
2004-11-25
Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
App 20040170055 - Albert, Frank ;   et al.
2004-09-02
Magnetostatically Coupled Magnetic Elements Utilizing Spin Transfer And An Mram Device Using The Magnetic Element
App 20040136231 - Huai, Yiming ;   et al.
2004-07-15
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
App 20040130940 - Huai, Yiming ;   et al.
2004-07-08
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
App 20040130936 - Nguyen, Paul P. ;   et al.
2004-07-08
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element
App 20040061154 - Huai, Yiming ;   et al.
2004-04-01
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
Grant 6,714,444 - Huai , et al. March 30, 2
2004-03-30
Magnetic Element Utilizing Spin Transfer And An Mram Device Using The Magnetic Element
App 20040027853 - Huai, Yiming ;   et al.
2004-02-12
Method of depositing material into high aspect ratio features
App 20030218835 - Hsiao, Richard ;   et al.
2003-11-27
Nanopost arrays and process for making same
Grant 6,185,961 - Tonucci , et al. February 13, 2
2001-02-13

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