loadpatents
Patent applications and USPTO patent grants for NG; Siu Tang.The latest application filed is for "single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber".
Patent | Date |
---|---|
Single Ring Design For High Yield, Substrate Extreme Edge Defect Reduction In Icp Plasma Processing Chamber App 20160099162 - NG; Siu Tang ;   et al. | 2016-04-07 |
Plasma generation source employing dielectric conduit assemblies having removable interfaces and related assemblies and methods Grant 9,155,184 - Ng , et al. October 6, 2 | 2015-10-06 |
Plasma Generation Source Employing Dielectric Conduit Assemblies Having Removable Interfaces And Related Assemblies And Methods App 20150137681 - NG; Siu Tang ;   et al. | 2015-05-21 |
Method Of Performing An In Situ Chamber Clean App 20120094499 - Ng; Siu Tang ;   et al. | 2012-04-19 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.