Ng; Jia Hui

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ng; Jia Hui.The latest application filed is for "vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a".

Company Profile

4.3.3

Ng; Jia Hui - Singapore SG

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate Grant 11,018,155 - Zhu , et al. May 25, 2	2021-05-25
Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate And A App 20200212065 - Zhu; Hongbin ; et al.	2020-07-02
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge Grant 10,622,374 - Zhu , et al.	2020-04-14
Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate And A Charge storage Structure And Method Of Forming A Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate App 20190043884 - Zhu; Hongbin ; et al.	2019-02-07
Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate Grant 10,090,318 - Zhu , et al. October 2, 2	2018-10-02
Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate And A Charge storage Structure And Method Of Forming A Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A Control Gate App 20180040626 - Zhu; Hongbin ; et al.	2018-02-08

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