Ng; Chiu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Ng; Chiu.The latest application filed is for "semiconductor device having a superjunction structure".
Company Profile
0.28.28
- Ng; Chiu - El Segundo CA
- Ng; Chiu - EI Segundo CA
Patent Activity
| Patent | Date |
|---|---|
| Bipolar semiconductor device with multi-trench enhancement regions Grant 10,164,078 - Udrea , et al. Dec | 2018-12-25 |
| Semiconductor device having a superjunction structure Grant 10,115,812 - Udrea , et al. October 30, 2 | 2018-10-30 |
| Bipolar semiconductor device with sub-cathode enhancement regions Grant 9,871,128 - Udrea , et al. January 16, 2 | 2018-01-16 |
| Semiconductor Device Having a Superjunction Structure App 20180012983 - Udrea; Florin ; et al. | 2018-01-11 |
| IGBT having deep gate trench Grant 9,859,407 - Tang , et al. January 2, 2 | 2018-01-02 |
| Bipolar semiconductor device having a deep charge-balanced structure Grant 9,831,330 - Udrea , et al. November 28, 2 | 2017-11-28 |
| IGBT having a deep superjunction structure Grant 9,799,725 - Udrea , et al. October 24, 2 | 2017-10-24 |
| Bipolar Semiconductor Device with Sub-Cathode Enhancement Regions App 20170271487 - Udrea; Florin ; et al. | 2017-09-21 |
| Bipolar Semiconductor Device with Multi-Trench Enhancement Regions App 20170271488 - Udrea; Florin ; et al. | 2017-09-21 |
| Bipolar Semiconductor Device Having Localized Enhancement Regions App 20170271445 - Udrea; Florin ; et al. | 2017-09-21 |
| Bipolar semiconductor device having a charge-balanced inter-trench structure Grant 9,768,284 - Udrea , et al. September 19, 2 | 2017-09-19 |
| IGBT having an inter-trench superjunction structure Grant 9,685,506 - Udrea , et al. June 20, 2 | 2017-06-20 |
| IGBT with buried emitter electrode Grant 9,496,378 - Tang , et al. November 15, 2 | 2016-11-15 |
| IGBT Having a Deep Superjunction Structure App 20160260825 - Udrea; Florin ; et al. | 2016-09-08 |
| Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure App 20160260823 - Udrea; Florin ; et al. | 2016-09-08 |
| IGBT Having an Inter-Trench Superjunction Structure App 20160260799 - Udrea; Florin ; et al. | 2016-09-08 |
| Bipolar Semiconductor Device Having a Charge-Balanced Inter-Trench Structure App 20160260824 - Udrea; Florin ; et al. | 2016-09-08 |
| IGBT Having Deep Gate Trench App 20160204238 - Tang; Yi ; et al. | 2016-07-14 |
| IGBT with Buried Emitter Electrode App 20160155832 - Tang; Yi ; et al. | 2016-06-02 |
| Deep gate trench IGBT Grant 9,299,819 - Tang , et al. March 29, 2 | 2016-03-29 |
| IGBT with buried emitter electrode Grant 9,245,985 - Tang , et al. January 26, 2 | 2016-01-26 |
| Deep Gate Trench IGBT App 20130256745 - Tang; Yi ; et al. | 2013-10-03 |
| IGBT with Buried Emitter Electrode App 20130256744 - Tang; Yi ; et al. | 2013-10-03 |
| Semiconductor device having increased switching speed Grant 8,314,002 - Francis , et al. November 20, 2 | 2012-11-20 |
| Variable threshold trench IGBT with offset emitter contacts Grant 8,067,797 - Ng , et al. November 29, 2 | 2011-11-29 |
| Trench IGBT with depletion stop layer Grant 7,956,419 - Francis , et al. June 7, 2 | 2011-06-07 |
| Trench IGBT for highly capacitive loads Grant 7,655,977 - Ng , et al. February 2, 2 | 2010-02-02 |
| Variable Threshold Trench Igbt With Offset Emitter Contacts App 20090146177 - Ng; Chiu ; et al. | 2009-06-11 |
| High voltage non punch through IGBT for switch mode power supplies Grant 7,534,666 - Francis , et al. May 19, 2 | 2009-05-19 |
| IGBT with amorphous silicon transparent collector Grant 7,507,608 - Francis , et al. March 24, 2 | 2009-03-24 |
| Process to create buried heavy metal at selected depth Grant 7,485,920 - Francis , et al. February 3, 2 | 2009-02-03 |
| Angled implant for shorter trench emitter Grant 7,335,947 - Francis , et al. February 26, 2 | 2008-02-26 |
| Trench IGBT with depletion stop layer App 20070096167 - Francis; Richard ; et al. | 2007-05-03 |
| Trench IGBT for highly capacitive loads App 20070085148 - Ng; Chiu ; et al. | 2007-04-19 |
| Trench IGBT with increased short circuit capability App 20070063269 - Ng; Chiu ; et al. | 2007-03-22 |
| Deep N diffusion for trench IGBT App 20070034941 - Francis; Richard ; et al. | 2007-02-15 |
| High voltage non punch through IGBT for switch mode power supplies App 20070026577 - Francis; Richard ; et al. | 2007-02-01 |
| IGBT with amorphous silicon transparent collector App 20060094179 - Francis; Richard ; et al. | 2006-05-04 |
| IGBT with amorphous silicon transparent collector Grant 7,005,702 - Francis , et al. February 28, 2 | 2006-02-28 |
| Semiconductor device having increased switching speed App 20050227461 - Francis, Richard ; et al. | 2005-10-13 |
| Angled implant for shorter trench emitter App 20050212039 - Francis, Richard ; et al. | 2005-09-29 |
| Angled implant for shorter trench emitter Grant 6,919,248 - Francis , et al. July 19, 2 | 2005-07-19 |
| Angled implant for shorter trench emitter App 20040178457 - Francis, Richard ; et al. | 2004-09-16 |
| Diode with weak anode Grant 6,753,580 - Francis , et al. June 22, 2 | 2004-06-22 |
| Hydrogen implant for buffer zone of punch-through non EPI IGBT Grant 6,707,111 - Francis , et al. March 16, 2 | 2004-03-16 |
| Trench IGBT Grant 6,683,331 - Francis , et al. January 27, 2 | 2004-01-27 |
| Trench IGBT App 20030201454 - Francis, Richard ; et al. | 2003-10-30 |
| Hybrid IGBT and MOSFET for zero current at zero voltage Grant 6,627,961 - Francis , et al. September 30, 2 | 2003-09-30 |
| Fast recovery diode and method for its manufacture Grant 6,603,153 - Francis , et al. August 5, 2 | 2003-08-05 |
| Process to create buried heavy metal at selected depth App 20030057522 - Francis, Richard ; et al. | 2003-03-27 |
| Hydrogen implant for buffer zone of punch-through non EPI IGBT App 20020190281 - Francis, Richard ; et al. | 2002-12-19 |
| Hydrogen implant for buffer zone of punch-through non epi IGBT Grant 6,482,681 - Francis , et al. November 19, 2 | 2002-11-19 |
| Process for forming power MOSFET device in float zone, non-epitaxial silicon App 20020019084 - Francis, Richard ; et al. | 2002-02-14 |
| Fast recovery diode and method for its manufacture App 20020008246 - Francis, Richard ; et al. | 2002-01-24 |
| Power transistor device having ultra deep increased concentration region Grant 5,766,966 - Ng June 16, 1 | 1998-06-16 |
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