Patent | Date |
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Method and apparatus for suppressing the channeling effect in high energy deep well implantation Grant 6,806,147 - Yu , et al. October 19, 2 | 2004-10-19 |
Ion implantation with improved ion source life expectancy Grant 6,756,600 - Ng , et al. June 29, 2 | 2004-06-29 |
Method for ultra thin resist linewidth reduction using implantation Grant 6,642,152 - Ng , et al. November 4, 2 | 2003-11-04 |
XE preamorphizing implantation Grant 6,624,037 - Buynoski , et al. September 23, 2 | 2003-09-23 |
XE preamorphizing implantation App 20030027381 - Buynoski, Matthew Stephen ;   et al. | 2003-02-06 |
Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI groove Grant 6,514,833 - Ishida , et al. February 4, 2 | 2003-02-04 |
Non-uniform channel profile via enhanced diffusion Grant 6,503,801 - Rouse , et al. January 7, 2 | 2003-01-07 |
Minimized contamination of semiconductor wafers within an implantation system Grant 6,452,198 - Mani , et al. September 17, 2 | 2002-09-17 |
Flash memory erase speed by fluorine implant or fluorination Grant 6,445,030 - Wu , et al. September 3, 2 | 2002-09-03 |
Semiconductor with laterally non-uniform channel doping profile and manufacturing method therefor Grant 6,380,041 - Yeap , et al. April 30, 2 | 2002-04-30 |
Ion Implantation With Improved Ion Source Life Expectancy App 20020000523 - NG, CHE-HOO ;   et al. | 2002-01-03 |
Method for preparing narrow photoresist lines Grant 6,232,048 - Buynoski , et al. May 15, 2 | 2001-05-15 |
Method for forming a shallow junction in a semiconductor device using antimony dimer Grant 6,191,012 - Ng , et al. February 20, 2 | 2001-02-20 |
Mosfet with gate plug using differential oxide growth Grant 6,136,674 - An , et al. October 24, 2 | 2000-10-24 |
End-of-range damage suppression for ultra-shallow junction formation Grant 6,074,937 - Pramanick , et al. June 13, 2 | 2000-06-13 |
Ultra shallow junction formation using amorphous silicon layer Grant 6,008,098 - Pramanick , et al. December 28, 1 | 1999-12-28 |
Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride/oxynitride films Grant 5,940,735 - Mehta , et al. August 17, 1 | 1999-08-17 |
Virtual hard mask for etching Grant 5,876,903 - Ng , et al. March 2, 1 | 1999-03-02 |
Conductive layer with anti-reflective surface portion Grant 5,841,179 - Pramanick , et al. November 24, 1 | 1998-11-24 |