Newton; Kenneth J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Newton; Kenneth J..The latest application filed is for "method of forming dual-damascene structure".

Company Profile

0.6.5

Newton; Kenneth J. - McKinney TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Process flow for dual damescene interconnect structures Grant 6,872,665 - Celii , et al. March 29, 2	2005-03-29
Pre-pattern surface modification of low-k dielectrics Grant 6,861,348 - Kirkpatrick , et al. March 1, 2	2005-03-01
In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning Grant 6,797,633 - Jiang , et al. September 28, 2	2004-09-28
Method of forming dual-damascene structure Grant 6,774,031 - Ali , et al. August 10, 2	2004-08-10
Method of forming dual-damascene structure App 20040121581 - Ali, Abbas ; et al.	2004-06-24
Pre-pattern surface modification for low-k dielectrics using A H2 plasma Grant 6,720,247 - Kirkpatrick , et al. April 13, 2	2004-04-13
Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics Grant 6,455,411 - Jiang , et al. September 24, 2	2002-09-24
Pre-pattern surface modification for low-k dielectrics using A H2 plasma App 20020111017 - Kirkpatrick, Brian K. ; et al.	2002-08-15
Pre-pattern surface modification for low-k dielectrics App 20020111037 - Kirkpatrick, Brian K. ; et al.	2002-08-15
In-situ plasma ash/treatment after via etch of low-k films for poison-free dual damascene trench patterning App 20020081855 - Jiang, Ping ; et al.	2002-06-27
Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics App 20020031906 - Jiang, Ping ; et al.	2002-03-14

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