| Patent | Date |
|---|
Semiconductor structure having group III-V device on group IV substrate
Grant 11,349,280 - Preisler , et al. May 31, 2 | 2022-05-31 |
Semiconductor structure having group III-V chiplet on group IV substrate and cavity in proximity to heating element
Grant 11,296,482 - Preisler , et al. April 5, 2 | 2022-04-05 |
Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing
Grant 11,276,682 - Sinha , et al. March 15, 2 | 2022-03-15 |
Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal liners
Grant 11,233,159 - Preisler , et al. January 25, 2 | 2022-01-25 |
Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices
Grant 11,195,920 - Hurwitz , et al. December 7, 2 | 2021-12-07 |
Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches
Grant 11,196,401 - Masse , et al. December 7, 2 | 2021-12-07 |
Semiconductor structure having porous semiconductor layer for RF devices
Grant 11,164,740 - Hurwitz , et al. November 2, 2 | 2021-11-02 |
Semiconductor-on-insulator (SOI) device with reduced parasitic capacitance
Grant 11,164,892 - Hurwitz November 2, 2 | 2021-11-02 |
Radio frequency (RF) filtering using phase-change material (PCM) RF switches
Grant 11,159,145 - El-Hinnawy , et al. October 26, 2 | 2021-10-26 |
High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non-volatile RF switches
Grant 11,158,794 - Masse , et al. October 26, 2 | 2021-10-26 |
Semiconductor structure having through-substrate via (TSV) in porous semiconductor region
Grant 11,145,572 - Howard October 12, 2 | 2021-10-12 |
Method of tuning a radio frequency (RF) module including a non-volatile tunable RF filter
Grant 11,139,792 - Masse , et al. October 5, 2 | 2021-10-05 |
Capacitive and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
Grant 11,088,322 - Slovin , et al. August 10, 2 | 2021-08-10 |
Anode up--cathode down silicon and germanium photodiode
Grant 11,081,610 - Zhu , et al. August 3, 2 | 2021-08-03 |
Non-volatile adjustable phase shifter using non-volatile radio frequency (RF) switch
Grant 11,057,019 - El-Hinnawy , et al. July 6, 2 | 2021-07-06 |
Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance
Grant 11,050,022 - El-Hinnawy , et al. June 29, 2 | 2021-06-29 |
Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits
Grant 11,031,555 - El-Hinnawy , et al. June 8, 2 | 2021-06-08 |
Phase-change material (PCM) radio frequency (RF) switches with trench metal plugs for RF terminals
Grant 11,031,331 - El-Hinnawy , et al. June 8, 2 | 2021-06-08 |
PCM RF switch with PCM contacts having slot lower portions
Grant 11,031,552 - Rose , et al. June 8, 2 | 2021-06-08 |
Method for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
Grant 11,031,689 - Howard , et al. June 8, 2 | 2021-06-08 |
Integrated optical/electrical probe card for testing optical, electrical, and optoelectronic devices in a semiconductor die
Grant 10,996,081 - Qamar , et al. May 4, 2 | 2021-05-04 |
High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications
Grant 10,991,631 - Preisler , et al. April 27, 2 | 2021-04-27 |
Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches
Grant 10,978,639 - El-Hinnawy , et al. April 13, 2 | 2021-04-13 |
Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
Grant 10,944,052 - Slovin , et al. March 9, 2 | 2021-03-09 |
Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch
Grant 10,937,960 - Slovin , et al. March 2, 2 | 2021-03-02 |
Device including PCM RF switch integrated with group III-V semiconductors
Grant 10,916,540 - El-Hinnawy , et al. February 9, 2 | 2021-02-09 |
Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling
Grant 10,916,585 - El-Hinnawy , et al. February 9, 2 | 2021-02-09 |
Germanium photodiode with silicon cap
Grant 10,892,373 - Zhu , et al. January 12, 2 | 2021-01-12 |
Method for fabrication of germanium photodiode with silicon cap
Grant 10,892,374 - Zhu , et al. January 12, 2 | 2021-01-12 |
Phase-change material RF switch
Grant 10,892,411 - Rose , et al. January 12, 2 | 2021-01-12 |
Phase-change material (PCM) radio frequency (RF) switches with capacitive couplings between lower portions and upper portions of RF terminals
Grant 10,886,212 - El-Hinnawy , et al. January 5, 2 | 2021-01-05 |
Method of manufacturing PCM RF switch
Grant 10,862,027 - Slovin , et al. December 8, 2 | 2020-12-08 |
Phase-change material (PCM) radio frequency (RF) switch
Grant 10,862,032 - Rose , et al. December 8, 2 | 2020-12-08 |
Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches
Grant 10,862,477 - Howard , et al. December 8, 2 | 2020-12-08 |
Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors
Grant 10,833,004 - El-Hinnawy , et al. November 10, 2 | 2020-11-10 |
Phase-change material (PCM) RF switch with top metal contact to heating element
Grant 10,833,261 - Rose , et al. November 10, 2 | 2020-11-10 |
Phase-change material (PCM) RF switch having contacts to PCM and heating element
Grant 10,833,260 - Rose , et al. November 10, 2 | 2020-11-10 |
Method of manufacturing phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer
Grant 10,833,259 - Slovin , et al. November 10, 2 | 2020-11-10 |
Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled upper portions of RF terminals
Grant 10,833,005 - El-Hinnawy , et al. November 10, 2 | 2020-11-10 |
Length-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches
Grant 10,811,606 - Howard , et al. October 20, 2 | 2020-10-20 |
Phase-change material (PCM) radio frequency (RF) switches
Grant 10,804,463 - Howard , et al. October 13, 2 | 2020-10-13 |
Phase-change material (PCM) RF switch with contacts to PCM and heating element
Grant 10,804,462 - Rose , et al. October 13, 2 | 2020-10-13 |
Method for fabricating contacts in a phase-change material (PCM) RF switch having a heating element
Grant 10,804,108 - Rose , et al. October 13, 2 | 2020-10-13 |
Heterojunction bipolar transistor fabrication using resist mask edge effects
Grant 10,797,132 - Sharma , et al. October 6, 2 | 2020-10-06 |
High reliability phase-change material (PCM) radio frequency (RF) switch using trap-rich region
Grant 10,770,657 - Slovin , et al. Sep | 2020-09-08 |
Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals
Grant 10,770,389 - El-Hinnawy , et al. Sep | 2020-09-08 |
Bonded two-die device including an integrated circuit (IC) die and a phase-change material (PCM) switch die
Grant 10,770,438 - Slovin , et al. Sep | 2020-09-08 |
High reliability RF switch based on phase-change material
Grant 10,756,268 - Slovin , et al. A | 2020-08-25 |
Read out integrated circuit (ROIC) for rapid testing and characterization of resistivity change of heating element in phase-change material (PCM) radio frequency (RF) switch
Grant 10,749,109 - Howard , et al. A | 2020-08-18 |
Using a shared material for fabrication of a phase-change material (PCM) switch and a resonator
Grant 10,748,963 - Slovin , et al. A | 2020-08-18 |
Width-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches
Grant 10,741,758 - Howard , et al. A | 2020-08-11 |
Read out integrated circuit (ROIC) for rapid testing and characterization of conductivity skew of phase-change material (PCM) in PCM radio frequency (RF) switches
Grant 10,739,290 - Howard , et al. A | 2020-08-11 |
Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element
Grant 10,707,125 - Rose , et al. | 2020-07-07 |
Uniform plate slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches
Grant 10,707,414 - Howard , et al. | 2020-07-07 |
Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated active devices
Grant 10,693,061 - El-Hinnawy , et al. | 2020-06-23 |
Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region
Grant 10,686,010 - Slovin , et al. | 2020-06-16 |
Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated passive devices
Grant 10,686,128 - El-Hinnawy , et al. | 2020-06-16 |
Radio frequency (RF) switch with improved power handling
Grant 10,686,486 - Kanawati , et al. | 2020-06-16 |
Phase-change material (PCM) contact configurations for improving performance in PCM RF switches
Grant 10,686,130 - Howard , et al. | 2020-06-16 |
Integrated semiconductor device including RF isolation regions under phase-change material (PCM) radio frequency (RF) switches
Grant 10,680,174 - Howard , et al. | 2020-06-09 |
Silicide block isolation for reducing off-capacitance of a radio frequency (RF) switch
Grant 10,672,885 - Kanawati | 2020-06-02 |
Silicon-on-insulator (SOI) die including a light emitting layer pedestal-aligned with a light receiving segment
Grant 10,649,137 - Preisler , et al. | 2020-05-12 |
Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance
Grant 10,644,235 - El-Hinnawy , et al. | 2020-05-05 |
Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance
Grant 10,644,236 - Howard , et al. | 2020-05-05 |
High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applications
Grant 10,622,262 - Preisler , et al. | 2020-04-14 |
Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonators
Grant 10,622,560 - Howard , et al. | 2020-04-14 |
Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
Grant 10,615,072 - Kar-Roy , et al. | 2020-04-07 |
Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches
Grant 10,615,338 - Rose , et al. | 2020-04-07 |
Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
Grant 10,615,071 - Kar-Roy , et al. | 2020-04-07 |
Integrated semiconductor device including an electrically insulative substrate under an electrically conductive or semiconductive heat spreader and phase-change material (PCM) radio frequency (RF) switches
Grant 10,593,876 - Howard , et al. | 2020-03-17 |
Array architecture for large scale integration of phase-change material (PCM) radio frequency (RF) switches
Grant 10,593,404 - Slovin , et al. | 2020-03-17 |
Wide contact structure for small footprint radio frequency (RF) switch
Grant 10,586,870 - Kanawati , et al. | 2020-03-10 |
Bi-directional electrostatic discharge protection device for radio frequency circuits
Grant 10,587,114 - Kanawati , et al. | 2020-03-10 |
High power RF switches using multiple optimized transistors and methods for fabricating same
Grant 10,587,233 - Hurwitz , et al. | 2020-03-10 |
Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devices
Grant 10,566,321 - Slovin , et al. Feb | 2020-02-18 |
Heating element designs for phase-change material (PCM) radio frequency (RF) switches
Grant 10,566,528 - El-Hinnawy , et al. Feb | 2020-02-18 |
Power amplifier module using phase-change material (PCM) radio frequency (RF) switches and selectable matching networks
Grant 10,536,124 - Masse , et al. Ja | 2020-01-14 |
Integrated semiconductor device including an electrically insulative and thermally conductive substrate and phase-change material (PCM) radio frequency (RF) switches
Grant 10,535,820 - Howard , et al. Ja | 2020-01-14 |
SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
Grant 10,529,836 - Preisler J | 2020-01-07 |
Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches
Grant 10,529,922 - Howard , et al. J | 2020-01-07 |
Dynamic impedance circuit for uniform voltage distribution in a high power switch branch
Grant 10,530,357 - Kanawati , et al. J | 2020-01-07 |
PCM RF switch fabrication with subtractively formed heater
Grant 10,475,993 - Slovin , et al. Nov | 2019-11-12 |
Manufacturing RF switch based on phase-change material
Grant 10,476,001 - Rose , et al. Nov | 2019-11-12 |
Non-linear shunt circuit for third order harmonic reduction in RF switches
Grant 10,469,121 - Hurwitz , et al. No | 2019-11-05 |
Amplifier using parallel high-speed and low-speed transistors
Grant 10,469,035 - Zheng , et al. No | 2019-11-05 |
High reliability RF switch based on phase-change material
Grant 10,461,253 - Slovin , et al. Oc | 2019-10-29 |
Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers
Grant 10,454,027 - Howard , et al. Oc | 2019-10-22 |
Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon region
Grant 10,347,625 - Moen , et al. July 9, 2 | 2019-07-09 |
Substrate isolation for low-loss radio frequency (RF) circuits
Grant 10,325,907 - Moen , et al. | 2019-06-18 |
Bent polysilicon gate structure for small footprint radio frequency (RF) switch
Grant 10,325,833 - Kanawati , et al. | 2019-06-18 |
Substrate isolation for low-loss radio frequency (RF) circuits
Grant 10,319,716 - Moen , et al. | 2019-06-11 |
BiCMOS integration using a shared SiGe layer
Grant 10,297,591 - Preisler , et al. | 2019-05-21 |
BiCMOS integration with reduced masking steps
Grant 10,290,630 - Preisler , et al. | 2019-05-14 |
Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon region
Grant 10,290,631 - Moen , et al. | 2019-05-14 |
Thermally conductive and electrically isolating layers in semiconductor structures
Grant 10,192,805 - Howard Ja | 2019-01-29 |
Bulk CMOS RF switch with reduced parasitic capacitance
Grant 10,177,045 - Preisler , et al. J | 2019-01-08 |
Bulk CMOS RF switch with reduced parasitic capacitance
Grant 10,177,044 - Preisler , et al. J | 2019-01-08 |
Hybrid MEMs-floating gate device
Grant 10,095,909 - Roizin , et al. October 9, 2 | 2018-10-09 |
SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layer
Grant 10,068,997 - Preisler September 4, 2 | 2018-09-04 |
Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacks
Grant 10,062,644 - Howard , et al. August 28, 2 | 2018-08-28 |
Integration of thermally conductive but electrically isolating layers with semiconductor devices
Grant 10,062,636 - Howard August 28, 2 | 2018-08-28 |
Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuit
Grant 10,062,712 - Moen , et al. August 28, 2 | 2018-08-28 |
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