Neudeck; Philip G.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Neudeck; Philip G..The latest application filed is for "method for providing semiconductors having self-aligned ion implant".

Company Profile

1.19.4

Neudeck; Philip G. - Cleveland OH
Neudeck; Philip G. - Olmsted Township OH
Neudeck; Philip G. - Olmstead Township OH
Neudeck; Philip G. - Ohmsted Falls OH US
Neudeck; Philip G. - Olmsted Falls OH
Neudeck; Philip G. - Strongsville OH

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Compensation for device property variation according to wafer location Grant 11,128,293 - Krasowski , et al. September 21, 2	2021-09-21
Reliability extreme temperature integrated circuits and method for producing the same Grant 11,004,802 - Spry , et al. May 11, 2	2021-05-11
Larger-area integrated electrical metallization dielectric structures with stress-managed unit cells for more capable extreme environment semiconductor electronics Grant 10,490,550 - Spry , et al. Nov	2019-11-26
Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits Grant 10,256,202 - Spry , et al.	2019-04-09
Current source logic gate Grant 10,122,363 - Krasowski , et al. November 6, 2	2018-11-06
Interconnection of semiconductor devices in extreme environment microelectronic integrated circuit chips Grant 9,978,686 - Spry , et al. May 22, 2	2018-05-22
Method for providing semiconductors having self-aligned ion implant Grant 8,841,698 - Neudeck September 23, 2	2014-09-23
Method For Providing Semiconductors Having Self-Aligned Ion Implant App 20110212583 - Neudeck; Philip G.	2011-09-01
Method for providing semiconductors having self-aligned ion implant Grant 7,935,601 - Neudeck May 3, 2	2011-05-03
Method for the growth of large low-defect single crystals Grant 7,449,065 - Powell , et al. November 11, 2	2008-11-11
Method for the production of nanometer scale step height reference specimens Grant 6,869,480 - Abel , et al. March 22, 2	2005-03-22
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations Grant 6,783,592 - Neudeck , et al. August 31, 2	2004-08-31
Method for growth of bulk crystals by vapor phase epitaxy App 20040144301 - Neudeck, Philip G. ; et al.	2004-07-29
Gas sensors using SiC semiconductors and method of fabrication thereof Grant 6,763,699 - Hunter , et al. July 20, 2	2004-07-20
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations App 20040069212 - Neudeck, Philip G. ; et al.	2004-04-15
Method for growing low-defect single crystal heteroepitaxial films Grant 6,488,771 - Powell , et al. December 3, 2	2002-12-03
Methods for growth of relatively large step-free SiC crystal surfaces Grant 6,461,944 - Neudeck , et al. October 8, 2	2002-10-08
Methods For Growth Of Relatively Large Step-free Sic Crystal Surfaces App 20020106842 - Neudeck, Philip G. ; et al.	2002-08-08
Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon Grant 6,165,874 - Powell , et al. December 26, 2	2000-12-26
Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon Grant 5,915,194 - Powell , et al. June 22, 1	1999-06-22
Compound semi-conductors and controlled doping thereof Grant 5,709,745 - Larkin , et al. January 20, 1	1998-01-20
Compound semiconductor and controlled doping thereof Grant 5,463,978 - Larkin , et al. November 7, 1	1995-11-07

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