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Compensation for device property variation according to wafer location Grant 11,128,293 - Krasowski , et al. September 21, 2 | 2021-09-21 |
Reliability extreme temperature integrated circuits and method for producing the same Grant 11,004,802 - Spry , et al. May 11, 2 | 2021-05-11 |
Larger-area integrated electrical metallization dielectric structures with stress-managed unit cells for more capable extreme environment semiconductor electronics Grant 10,490,550 - Spry , et al. Nov | 2019-11-26 |
Durable bond pad structure for electrical connection to extreme environment microelectronic integrated circuits Grant 10,256,202 - Spry , et al. | 2019-04-09 |
Current source logic gate Grant 10,122,363 - Krasowski , et al. November 6, 2 | 2018-11-06 |
Interconnection of semiconductor devices in extreme environment microelectronic integrated circuit chips Grant 9,978,686 - Spry , et al. May 22, 2 | 2018-05-22 |
Method for providing semiconductors having self-aligned ion implant Grant 8,841,698 - Neudeck September 23, 2 | 2014-09-23 |
Method For Providing Semiconductors Having Self-Aligned Ion Implant App 20110212583 - Neudeck; Philip G. | 2011-09-01 |
Method for providing semiconductors having self-aligned ion implant Grant 7,935,601 - Neudeck May 3, 2 | 2011-05-03 |
Method for the growth of large low-defect single crystals Grant 7,449,065 - Powell , et al. November 11, 2 | 2008-11-11 |
Method for the production of nanometer scale step height reference specimens Grant 6,869,480 - Abel , et al. March 22, 2 | 2005-03-22 |
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations Grant 6,783,592 - Neudeck , et al. August 31, 2 | 2004-08-31 |
Method for growth of bulk crystals by vapor phase epitaxy App 20040144301 - Neudeck, Philip G. ;   et al. | 2004-07-29 |
Gas sensors using SiC semiconductors and method of fabrication thereof Grant 6,763,699 - Hunter , et al. July 20, 2 | 2004-07-20 |
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations App 20040069212 - Neudeck, Philip G. ;   et al. | 2004-04-15 |
Method for growing low-defect single crystal heteroepitaxial films Grant 6,488,771 - Powell , et al. December 3, 2 | 2002-12-03 |
Methods for growth of relatively large step-free SiC crystal surfaces Grant 6,461,944 - Neudeck , et al. October 8, 2 | 2002-10-08 |
Methods For Growth Of Relatively Large Step-free Sic Crystal Surfaces App 20020106842 - Neudeck, Philip G. ;   et al. | 2002-08-08 |
Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon Grant 6,165,874 - Powell , et al. December 26, 2 | 2000-12-26 |
Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon Grant 5,915,194 - Powell , et al. June 22, 1 | 1999-06-22 |
Compound semi-conductors and controlled doping thereof Grant 5,709,745 - Larkin , et al. January 20, 1 | 1998-01-20 |
Compound semiconductor and controlled doping thereof Grant 5,463,978 - Larkin , et al. November 7, 1 | 1995-11-07 |