| Patent | Date |
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Metal-oxide-semiconductor device structures with tailored dopant depth profiles
Grant 7,994,575 - Furukawa , et al. August 9, 2 | 2011-08-09 |
Methods for fabricating a metal-oxide-semiconductor device structure
Grant 7,951,660 - Furukawa , et al. May 31, 2 | 2011-05-31 |
Methods and structures for promoting stable synthesis of carbon nanotubes
Grant 7,851,064 - Furukawa , et al. December 14, 2 | 2010-12-14 |
Vertical carbon nanotube field effect transistors and arrays
Grant 7,829,883 - Furukawa , et al. November 9, 2 | 2010-11-09 |
Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
Grant 7,820,502 - Furukawa , et al. October 26, 2 | 2010-10-26 |
Vertical nanotube semiconductor device structures and methods of forming the same
Grant 7,691,720 - Furukawa , et al. April 6, 2 | 2010-04-06 |
Shallow trench isolation fill by liquid phase deposition of SiO.sub.2
Grant 7,525,156 - Hakey , et al. April 28, 2 | 2009-04-28 |
Vertical Nanotube Semiconductor Device Structures And Methods Of Forming The Same
App 20080227264 - Furukawa; Toshiharu ; et al. | 2008-09-18 |
SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
App 20080197448 - Hakey; Mark Charles ; et al. | 2008-08-21 |
Methods And Structures For Promoting Stable Synthesis Of Carbon Nanotubes
App 20080160312 - Furukawa; Toshiharu ; et al. | 2008-07-03 |
Methods and structures for promoting stable synthesis of carbon nanotubes
Grant 7,374,793 - Furukawa , et al. May 20, 2 | 2008-05-20 |
Methods Of Fabricating Vertical Carbon Nanotube Field Effect Transistors For Arrangement In Arrays And Field Effect Transistors And Arrays Formed Thereby
App 20080044954 - Furukawa; Toshiharu ; et al. | 2008-02-21 |
Design Structures Incorporating Shallow Trench Isolation Filled by Liquid Phase Deposition of SiO2
App 20080040696 - Hakey; Mark Charles ; et al. | 2008-02-14 |
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
Grant 7,329,567 - Furukawa , et al. February 12, 2 | 2008-02-12 |
SHALLOW TRENCH ISOLATION FILL BY LIQUID PHASE DEPOSITION OF SiO2
App 20070228510 - Hakey; Mark Charles ; et al. | 2007-10-04 |
Shallow trench isolation fill by liquid phase deposition of SiO2
Grant 7,273,794 - Hakey , et al. September 25, 2 | 2007-09-25 |
Methods of forming alternating phase shift masks having improved phase-shift tolerance
Grant 7,264,415 - Furukawa , et al. September 4, 2 | 2007-09-04 |
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
Grant 7,211,844 - Furukawa , et al. May 1, 2 | 2007-05-01 |
Method For Fabricating Oxygen-implanted Silicon On Insulation Type Semiconductor And Semiconductor Formed Therefrom
App 20060226480 - Furukawa; Toshiharu ; et al. | 2006-10-12 |
Process For Oxide Cap Formation In Semiconductor Manufacturing
App 20060166432 - Holmes; Steven John ; et al. | 2006-07-27 |
Selective synthesis of semiconducting carbon nanotubes
Grant 7,038,299 - Furukawa , et al. May 2, 2 | 2006-05-02 |
Method of forming FinFET gates without long etches
Grant 6,989,308 - Furukawa , et al. January 24, 2 | 2006-01-24 |
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
App 20050266627 - Furukawa, Toshiharu ; et al. | 2005-12-01 |
Methods for fabricating a metal-oxide-semiconductor device structure and metal-oxide-semiconductor device structures formed thereby
App 20050242378 - Furukawa, Toshiharu ; et al. | 2005-11-03 |
Method of forming FinFET gates without long etches
App 20050202607 - Furukawa, Toshiharu ; et al. | 2005-09-15 |
Methods of forming alternating phase shift masks having improved phase-shift tolerance
App 20050202322 - Furukawa, Toshiharu ; et al. | 2005-09-15 |
Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
App 20050179029 - Furukawa, Toshiharu ; et al. | 2005-08-18 |
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
App 20050167740 - Furukawa, Toshiharu ; et al. | 2005-08-04 |
Vertical nanotube semiconductor device structures and methods of forming the same
App 20050167655 - Furukawa, Toshiharu ; et al. | 2005-08-04 |
Methods and structures for promoting stable synthesis of carbon nanotubes
App 20050129948 - Furukawa, Toshiharu ; et al. | 2005-06-16 |
Shallow trench isolation fill by liquid phase deposition of SiO2
App 20050130387 - Hakey, Mark Charles ; et al. | 2005-06-16 |
Selective synthesis of semiconducting carbon nanotubes
App 20050130341 - Furukawa, Toshiharu ; et al. | 2005-06-16 |
Methods for fabricating a metal-oxide-semiconductor device structure and metal-oxide-semiconductor device structures formed thereby
App 20050098804 - Furukawa, Toshiharu ; et al. | 2005-05-12 |
Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby
Grant 6,890,828 - Horak , et al. May 10, 2 | 2005-05-10 |
Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby
App 20040245637 - Horak, David Vaclav ; et al. | 2004-12-09 |
Method for manufacturing a multi-level interconnect structure
Grant 6,713,835 - Horak , et al. March 30, 2 | 2004-03-30 |
Threshold voltage tailoring of corner of MOSFET device
Grant 6,084,276 - Gambino , et al. July 4, 2 | 2000-07-04 |
Threshold voltage tailoring of the corner of a MOSFET device
Grant 5,994,202 - Gambino , et al. November 30, 1 | 1999-11-30 |
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