| Patent | Date |
|---|
Semiconductor Device And Associated Manufacturing Method
App 20220231147 - LE ROYER; Cyrille ; et al. | 2022-07-21 |
Method for producing a component by filling a cavity within an electrical isolation area with carbon-based material
Grant 11,387,147 - Posseme , et al. July 12, 2 | 2022-07-12 |
Method for manufacturing an electronic component having multiple quantum dots
Grant 11,362,181 - Posseme , et al. June 14, 2 | 2022-06-14 |
Method Of Making A Quantum Device
App 20220172093 - POSSEME; Nicolas ; et al. | 2022-06-02 |
Quantum Device And Method For Producing The Same
App 20220173229 - POSSEME; Nicolas ; et al. | 2022-06-02 |
Method Of Manufacturing Microelectronic Components
App 20220068724 - NEMOUCHI; Fabrice ; et al. | 2022-03-03 |
Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistor
Grant 11,217,446 - Posseme , et al. January 4, 2 | 2022-01-04 |
Process for producing a component comprising III-V materials and contacts compatible with silicon process flows
Grant 11,075,501 - Ghegin , et al. July 27, 2 | 2021-07-27 |
Process For Manufacturing Micro-electronic Components
App 20210066133 - POSSEME; Nicolas ; et al. | 2021-03-04 |
Internal via with improved contact for upper semi-conductor layer of a 3D circuit
Grant 10,930,562 - Fenouillet-Beranger , et al. February 23, 2 | 2021-02-23 |
Method For Producing At Least One Device In Compressive Strained Semiconductor
App 20210005443 - GABEN; Loic ; et al. | 2021-01-07 |
Process For Producing A Component Comprising Iii-v Materials And Contacts Compatible With Silicon Process Flows
App 20200274321 - GHEGIN; Elodie ; et al. | 2020-08-27 |
Method For Fabricating An Integrated Circuit Including A Nmos Transistor And A Pmos Transistor
App 20200203161 - POSSEME; Nicolas ; et al. | 2020-06-25 |
Method For Manufacturing An Electronic Component Having Multiple Quantum Dots
App 20200185497 - POSSEME; Nicolas ; et al. | 2020-06-11 |
Transistor Having Blocks Of Source And Drain Silicides Near The Channel
App 20200161422 - Nemouchi; Fabrice ; et al. | 2020-05-21 |
Internal Via With Improved Contact For Upper Semi-conductor Layer Of A 3d Circuit
App 20190371671 - FENOUILLET-BERANGER; Claire ; et al. | 2019-12-05 |
Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor material
Grant 10,388,653 - Rodriguez , et al. A | 2019-08-20 |
Process for producing an intermetallic contact based on Ni on In.sub.xGa.sub.1-xAs
Grant 10,361,087 - Rodriguez , et al. | 2019-07-23 |
Forming of a MOS transistor based on a two-dimensional semiconductor material
Grant 10,340,361 - Nemouchi , et al. | 2019-07-02 |
Procede De Fabrication D'une Heterostructure Comportant Des Structures Elementaires Actives Ou Passives En Materiau Iii-v A La S
App 20190187375 - NEMOUCHI; Fabrice ; et al. | 2019-06-20 |
Semiconductor and metal alloy interconnections for a 3D circuit
Grant 10,199,276 - Fenouillet-Beranger , et al. Fe | 2019-02-05 |
Procede De Realisation De Contact Intermetallique A Base De Ni Sur Inxga1-xas
App 20190006182 - RODRIGUEZ; Philippe ; et al. | 2019-01-03 |
Forming Of A Mos Transistor Based On A Two-dimensional Semiconductor Material
App 20180337252 - Nemouchi; Fabrice ; et al. | 2018-11-22 |
Fabrication method of a stack of electronic devices
Grant 9,997,395 - Fenouillet-Beranger , et al. June 12, 2 | 2018-06-12 |
SBFET transistor and corresponding fabrication process
Grant 9,911,827 - Hutin , et al. March 6, 2 | 2018-03-06 |
Fabrication Method Of A Stack Of Electronic Devices
App 20170352583 - FENOUILLET-BERANGER; Claire ; et al. | 2017-12-07 |
Transistor with MIS connections and fabricating process
Grant 9,831,319 - Borrel , et al. November 28, 2 | 2017-11-28 |
Sbfet Transistor And Corresponding Fabrication Process
App 20170162672 - HUTIN; Louis ; et al. | 2017-06-08 |
Semiconductor And Metal Alloy Interconnections For A 3d Circuit
App 20170117186 - FENOUILLET-BERANGER; Claire ; et al. | 2017-04-27 |
Formation Of Ohmic Contacts For A Device Provided With A Region Made Of Iii-v Material And A Region Made Of Another Semiconductor Material
App 20170062424 - RODRIGUEZ; Philippe ; et al. | 2017-03-02 |
Fabrication method of a transistor with improved field effect
Grant 9,548,210 - Nemouchi , et al. January 17, 2 | 2017-01-17 |
Transistor With Mis Connections And Fabricating Process
App 20160260819 - BORREL; Julien ; et al. | 2016-09-08 |
Method for manufacturing a microelectronic device including depositing identical or different metallic layers on the same wafer
Grant 9,379,024 - Fournier , et al. June 28, 2 | 2016-06-28 |
Contact on a heterogeneous semiconductor substrate
Grant 9,269,570 - Morand , et al. February 23, 2 | 2016-02-23 |
Fabrication Method Of A Transistor With Improved Field Effect
App 20150311287 - NEMOUCHI; Fabrice ; et al. | 2015-10-29 |
Manufacturing method for a device with transistors strained by silicidation of source and drain zones
Grant 9,093,552 - Nemouchi , et al. July 28, 2 | 2015-07-28 |
Method For Manufacturing A Microelectronic Device
App 20150194349 - FOURNIER; Claire ; et al. | 2015-07-09 |
Method for forming gate, source, and drain contacts on a MOS transistor
Grant 8,822,332 - Niebojewski , et al. September 2, 2 | 2014-09-02 |
Method of producing a device with transistors strained by means of an external layer
Grant 8,664,104 - Nemouchi , et al. March 4, 2 | 2014-03-04 |
Method for producing a substrate including a step of thinning with stop when a porous zone is detected
Grant 8,617,908 - Gaillard , et al. December 31, 2 | 2013-12-31 |
Method for preparing a layer comprising nickel monosilicide NiSi on a substrate comprising silicon
Grant 8,586,463 - Nemouchi , et al. November 19, 2 | 2013-11-19 |
Method For Forming Gate, Source, And Drain Contacts On A Mos Transistor
App 20130295734 - Niebojewski; Heimanu ; et al. | 2013-11-07 |
Contact On A Heterogeneous Semiconductor Substrate
App 20130273722 - Morand; Yves ; et al. | 2013-10-17 |
Method Of Producing A Device With Transistors Strained By Means Of An External Layer
App 20130214362 - NEMOUCHI; Fabrice ; et al. | 2013-08-22 |
Manufacturing Method For A Device With Transistors Strained By Silicidation Of Source And Drain Zones
App 20130214363 - NEMOUCHI; Fabrice ; et al. | 2013-08-22 |
Method for forming a multilayer structure
Grant 8,470,689 - Desplobain , et al. June 25, 2 | 2013-06-25 |
Method for producing an electro-mechanical microsystem
Grant 8,324,073 - Gaillard , et al. December 4, 2 | 2012-12-04 |
Method For Forming A Multilayer Structure
App 20120115311 - DESPLOBAIN; Sebastien ; et al. | 2012-05-10 |
Method For Producing A Substrate Including A Step Of Thinning With Stop When A Porous Zone Is Detected
App 20110244601 - GAILLARD; Frederic-Xavier ; et al. | 2011-10-06 |
Method For Producing An Electro-mechanical Microsystem
App 20110221015 - Gaillard; Frederic-Xavier ; et al. | 2011-09-15 |
Method for forming metallic materials comprising semi-conductors
Grant 7,972,911 - Carron , et al. July 5, 2 | 2011-07-05 |
Method For Forming Metallic Materials Comprising Semi-conductors
App 20110143534 - CARRON; Veronique ; et al. | 2011-06-16 |
Selective formation of a compound comprising a semi-conducting material and a metallic material in a substrate through a germanium oxide layer
Grant 7,842,612 - Nemouchi November 30, 2 | 2010-11-30 |
Method For Preparing A Layer Comprising Nickel Monosilicide Nisi On A Substrate Comprising Silicon
App 20100117238 - NEMOUCHI; Fabrice ; et al. | 2010-05-13 |
Selective formation of a compound comprising a semi-conducting material and a metallic material in a substrate through a germanium oxide layer
App 20090087985 - Nemouchi; Fabrice | 2009-04-02 |
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