Nelson; Shelby F.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nelson; Shelby F..The latest application filed is for "substrate preparation for selective area deposition".

Company Profile

2.65.72

Nelson; Shelby F. - Pittsford NY US
- Pittsford NY US
Nelson; Shelby F - Pittsford NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Four terminal transistor fabrication Grant 8,946,070 - Tutt , et al. February 3, 2	2015-02-03
Substrate preparation for selective area deposition Grant 8,937,016 - Ellinger , et al. January 20, 2	2015-01-20
Patterned thin film dielectric stack formation Grant 8,927,434 - Ellinger , et al. January 6, 2	2015-01-06
Patterning for selective area deposition Grant 8,921,236 - Ellinger , et al. December 30, 2	2014-12-30
Patterning For Selective Area Deposition App 20140377963 - Ellinger; Carolyn R. ; et al.	2014-12-25
Four Terminal Transistor Fabrication App 20140377943 - Tutt; Lee W. ; et al.	2014-12-25
Circuit Including Four Terminal Transistor App 20140374762 - Tutt; Lee W. ; et al.	2014-12-25
Substrate Preparation For Selective Area Deposition App 20140377955 - Ellinger; Carolyn R. ; et al.	2014-12-25
Four Terminal Transistor App 20140374806 - Tutt; Lee W. ; et al.	2014-12-25
Producing vertical transistor having reduced parasitic capacitance Grant 8,865,576 - Nelson , et al. October 21, 2	2014-10-21
Method of forming patterned thin film dielectric stack Grant 8,846,545 - Ellinger , et al. September 30, 2	2014-09-30
Transistor including multiple reentrant profiles Grant 8,847,226 - Tutt , et al. September 30, 2	2014-09-30
Transistor including reduced channel length Grant 8,847,232 - Tutt , et al. September 30, 2	2014-09-30
Vertical transistor having reduced parasitic capacitance Grant 8,803,227 - Nelson , et al. August 12, 2	2014-08-12
Transistor including reentrant profile Grant 8,803,203 - Tutt , et al. August 12, 2	2014-08-12
Patterned thin film dielectric layer formation Grant 8,791,023 - Ellinger , et al. July 29, 2	2014-07-29
Viscosity modulated dual feed continuous liquid ejector Grant 8,740,323 - Nelson , et al. June 3, 2	2014-06-03
Circuit including vertical transistors with a conductive stack having reentrant profile Grant 8,698,230 - Tutt , et al. April 15, 2	2014-04-15
Actuating transistor including multi-layer reentrant profile Grant 8,674,748 - Tutt , et al. March 18, 2	2014-03-18
Patterned Thin Film Dielectric Stack Formation App 20140065803 - Ellinger; Carolyn R. ; et al.	2014-03-06
Patterned Thin Film Dielectric Layer Formation App 20140065831 - Ellinger; Carolyn R. ; et al.	2014-03-06
Thin Film Transistor Including Dielectric Stack App 20140061648 - Levy; David H. ; et al.	2014-03-06
Thin Film Transistor Including Improved Semiconductor Interface App 20140061795 - Levy; David H. ; et al.	2014-03-06
High Performance Thin Film Transistor App 20140061649 - Nelson; Shelby F. ; et al.	2014-03-06
Electronic Element Including Dielectric Stack App 20140061869 - Nelson; Shelby F. ; et al.	2014-03-06
Patterned Thin Film Dielectric Stack Formation App 20140065830 - Ellinger; Carolyn R. ; et al.	2014-03-06
Thin Film Dielectric Layer Formation App 20140065838 - Ellinger; Carolyn R. ; et al.	2014-03-06
High performance thin film transistor Grant 8,653,516 - Nelson , et al. February 18, 2	2014-02-18
Actuating transistor including single layer reentrant profile Grant 8,637,355 - Nelson , et al. January 28, 2	2014-01-28
Vertical transistor actuation Grant 8,633,068 - Tutt , et al. January 21, 2	2014-01-21
Producing a vertical transistor including reentrant profile Grant 8,623,757 - Nelson , et al. January 7, 2	2014-01-07
Producing transistor including single layer reentrant profile Grant 8,617,942 - Nelson , et al. December 31, 2	2013-12-31
Producing transistor including single layer reentrant profile Grant 08617942 -	2013-12-31
Transistor including single layer reentrant profile Grant 8,592,909 - Nelson , et al. November 26, 2	2013-11-26
Vertical Transistor Actuation App 20130214845 - Tutt; Lee W. ; et al.	2013-08-22
Circuit Including Vertical Transistors App 20130214347 - Tutt; Lee W. ; et al.	2013-08-22
Transistor including multi-layer reentrant profile Grant 8,492,769 - Tutt , et al. July 23, 2	2013-07-23
Viscosity Modulated Dual Feed Continuous Liquid Ejector App 20130100183 - Nelson; Shelby F. ; et al.	2013-04-25
Vertical Transistor Having Reduced Parasitic Capacitance App 20130082746 - Nelson; Shelby F. ; et al.	2013-04-04
Producing Vertical Transistor Having Reduced Parasitic Capacitance App 20130084692 - Nelson; Shelby F. ; et al.	2013-04-04
Producing A Vertical Transistor Including Reentrant Profile App 20130084681 - Nelson; Shelby F. ; et al.	2013-04-04
Producing transistor including multi-layer reentrant profile Grant 8,409,937 - Tutt , et al. April 2, 2	2013-04-02
Actuating Transistor Including Single Layer Reentrant Profile App 20130052800 - Nelson; Shelby F. ; et al.	2013-02-28
Transistor Including Single Layer Reentrant Profile App 20130049170 - Nelson; Shelby F. ; et al.	2013-02-28
Producing Transistor Including Single Layer Reentrant Profile App 20130052832 - Nelson; Shelby F. ; et al.	2013-02-28
Producing transistor including reduced channel length Grant 8,383,469 - Tutt , et al. February 26, 2	2013-02-26
Producing transistor including multiple reentrant profiles Grant 8,338,291 - Tutt , et al. December 25, 2	2012-12-25
Actuating transistor including multiple reentrant profiles Grant 8,304,347 - Tutt , et al. November 6, 2	2012-11-06
Producing a vertical transistor including reentrant profile Grant 8,273,654 - Nelson , et al. September 25, 2	2012-09-25
Producing Transistor Including Reduced Channel Length App 20120178225 - Tutt; Lee W. ; et al.	2012-07-12
Producing Transistor Including Multi-layer Reentrant Profile App 20120178247 - Tutt; Lee W. ; et al.	2012-07-12
Actuating Transistor Including Multiple Reentrant Profiles App 20120176181 - Tutt; Lee W. ; et al.	2012-07-12
Transistor Including Reduced Channel Length App 20120175684 - Tutt; Lee W. ; et al.	2012-07-12
Transistor Including Multiple Reentrant Profiles App 20120175623 - Tutt; Lee W. ; et al.	2012-07-12
Transistor Including Multi-layer Reentrant Profile App 20120175614 - Tutt; Lee W. ; et al.	2012-07-12
Actuating Transistor Including Multi-layer Reentrant Profile App 20120176182 - Tutt; Lee W. ; et al.	2012-07-12
Producing Transistor Including Multiple Reentrant Profiles App 20120178246 - Tutt; Lee W. ; et al.	2012-07-12
Process for atomic layer deposition Grant 8,207,063 - Cowdery-Corvan , et al. June 26, 2	2012-06-26
Transistor Including Reentrant Profile App 20110210783 - Tutt; Lee W. ; et al.	2011-09-01
Actuating transistor including reduced channel length Grant 7,985,684 - Tutt , et al. July 26, 2	2011-07-26
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Grant 7,981,719 - Shukla , et al. July 19, 2	2011-07-19
Process for making doped zinc oxide Grant 7,972,898 - Cowdery-Corvan , et al. July 5, 2	2011-07-05
Distribution Manifold Including Multiple Fluid Communication Ports App 20110097489 - Kerr; Roger S. ; et al.	2011-04-28
Method of making transistor including reentrant profile Grant 7,923,313 - Tutt , et al. April 12, 2	2011-04-12
Process for atomic layer deposition Grant 7,851,380 - Nelson , et al. December 14, 2	2010-12-14
N-type semiconductor materials for thin film transistors Grant 7,807,994 - Shukla , et al. October 5, 2	2010-10-05
Delivery Device Comprising Gas Diffuser For Thin Film Deposition App 20100248423 - Nelson; Shelby F. ; et al.	2010-09-30
Delivery device comprising gas diffuser for thin film deposition Grant 7,789,961 - Nelson , et al. September 7, 2	2010-09-07
N-type Semiconductor Materials For Thin Film Transistors App 20090312553 - Shukla; Deepak ; et al.	2009-12-17
N-type semiconductor materials for thin film transistors Grant 7,629,605 - Shukla , et al. December 8, 2	2009-12-08
N,n'-di(arylalkyl)-substituted Naphthalene-based Tetracarboxylic Diimide Compounds As N-type Semiconductor Materials For Thin Film Transistors App 20090261323 - Shukla; Deepak ; et al.	2009-10-22
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Grant 7,579,619 - Shukla , et al. August 25, 2	2009-08-25
Process For Atomic Layer Deposition App 20090081842 - Nelson; Shelby F. ; et al.	2009-03-26
Process For Making Doped Zinc Oxide App 20090081826 - Cowdery-Corvan; Peter J. ; et al.	2009-03-26
Ion implantation with multiple concentration levels Grant 7,495,347 - Raisanen , et al. February 24, 2	2009-02-24
N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Grant 7,422,777 - Shukla , et al. September 9, 2	2008-09-09
Process For Atomic Layer Deposition App 20080182358 - Cowdery-Corvan; Peter J. ; et al.	2008-07-31
Delivery Device Comprising Gas Diffuser For Thin Film Deposition App 20080166884 - Nelson; Shelby F. ; et al.	2008-07-10
Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors Grant 7,326,956 - Shukla , et al. February 5, 2	2008-02-05
N,N'-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors App 20070116895 - Shukla; Deepak ; et al.	2007-05-24
N-type semiconductor materials for thin film transistors App 20070096084 - Shukla; Deepak ; et al.	2007-05-03
N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors Grant 7,198,977 - Shukla , et al. April 3, 2	2007-04-03
N,N'-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors App 20060237712 - Shukla; Deepak ; et al.	2006-10-26
Polymeric gate dielectrics for organic thin film transistors and methods of making the same App 20060214154 - Yang; Zhihao ; et al.	2006-09-28
Fluorine-containing N,N'-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors App 20060131564 - Shukla; Deepak ; et al.	2006-06-22
N,N'-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors App 20060134823 - Shukla; Deepak ; et al.	2006-06-22
Ink jet nozzle geometry selection by laser ablation of thin walls App 20050285901 - Nelson, Shelby F. ; et al.	2005-12-29
Ion implantation with multiple concentration levels App 20050245056 - Raisanen, Alan D. ; et al.	2005-11-03
Ion implantation with multiple concentration levels Grant 6,927,153 - Raisanen , et al. August 9, 2	2005-08-09
Integrated side shooter inkjet architecture with round nozzles Grant 6,805,433 - Raisanen , et al. October 19, 2	2004-10-19
Ion implantation with multiple concentration levels App 20040164379 - Raisanen, Alan D. ; et al.	2004-08-26
Method and apparatus for selectively providing a semiconductor device with improved breakdown voltage without requiring an additional mask App 20030089953 - Nelson, Shelby F. ; et al.	2003-05-15
Method and apparatus for selectively providing a semiconductor device with improved breakdown voltage without requiring an additional mask App 20030089952 - Nelson, Shelby F. ; et al.	2003-05-15

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