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name:-0.0077879428863525
name:-0.0062029361724854
name:-0.004641056060791
Nause; Jeffrey E. Patent Filings

Nause; Jeffrey E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Nause; Jeffrey E..The latest application filed is for "methods of forming a p-type group ii-vi semiconductor crystal layer on a substrate".

Company Profile
0.4.4
  • Nause; Jeffrey E. - Mableton GA
  • Nause; Jeffrey E. - Atlanta GA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Zinc-oxide-based double-heterostructure light-emitting diode
Grant 7,525,128 - Nause , et al. April 28, 2
2009-04-28
Methods Of Forming A P-type Group Ii-vi Semiconductor Crystal Layer On A Substrate
App 20070111372 - Nause; Jeffrey E. ;   et al.
2007-05-17
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
Grant 7,176,054 - Nause , et al. February 13, 2
2007-02-13
N-type Bulk Single Crystal Zinc Oxide
App 20070006802 - Nause; Jeffrey E. ;   et al.
2007-01-11
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
Grant 6,887,736 - Nause , et al. May 3, 2
2005-05-03
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
App 20050020035 - Nause, Jeffrey E. ;   et al.
2005-01-27
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
App 20040058463 - Nause, Jeffrey E. ;   et al.
2004-03-25
Pressurized skull crucible apparatus for crystal growth and related system and methods
Grant 5,900,060 - Nause , et al. May 4, 1
1999-05-04

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