Natzle; Wesley Charles
Patent Applications and Registrations
Patent applications and USPTO patent grants for Natzle; Wesley Charles.The latest application filed is for "mosfet with high dielectric constant gate insulator and minimum overlap capacitance".
- Natzle; Wesley Charles - New Paltz NY
| Patent | Date |
|---|---|
| Wet etch reduction of gate widths Grant 6,617,085 - Kanh , et al. September 9, 2 | 2003-09-09 |
| Mosfet with high dielectric constant gate insulator and minimum overlap capacitance App 20020028555 - Boyd, Diane Catherine ; et al. | 2002-03-07 |
| MOSFET with high dielectric constant gate insulator and minimum overlap capacitance Grant 6,353,249 - Boyd , et al. March 5, 2 | 2002-03-05 |
| Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance Grant 6,271,094 - Boyd , et al. August 7, 2 | 2001-08-07 |
| Disposable-spacer damascene-gate process for SUB 0.05 .mu.m MOS devices Grant 6,245,619 - Boyd , et al. June 12, 2 | 2001-06-12 |
| Freestanding multilayer wiring structure Grant 6,171,971 - Natzle January 9, 2 | 2001-01-09 |
| Freestanding multilayer IC wiring structure Grant 6,097,092 - Natzle August 1, 2 | 2000-08-01 |
| Film removal by chemical transformation and aerosol clean Grant 5,792,275 - Natzle , et al. August 11, 1 | 1998-08-11 |
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