Narita; Satoyasu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Narita; Satoyasu.The latest application filed is for "magnesium oxide sputtering target".

Company Profile

3.5.12

Narita; Satoyasu - Ibaraki JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
MgO sintered sputtering target Grant 11,345,990 - Shibuya , et al. May 31, 2	2022-05-31
Magnesium Oxide Sputtering Target App 20210351023 - KAJITA; Hiroki ; et al.	2021-11-11
Multi-shank Heater App 20210068206 - NARITA; Satoyasu ; et al.	2021-03-04
MgAl2O4 SINTERED BODY, SPUTTERING TARGET USING THE SINTERED BODY AND METHOD OF PRODUCING MgAl2O4 SINTERED BODY App 20210017085 - Narita; Satoyasu	2021-01-21
MgO SINTERED SPUTTERING TARGET App 20200263291 - Shibuya; Yoshitaka ; et al.	2020-08-20
Niobium oxide sintered compact, sputtering target formed from said sintered compact, and method of producing niobium oxide sintered compact Grant 10,593,524 - Narita	2020-03-17
NbO2 sintered compact, sputtering target comprising the sintered compact, and method of producing NbO2 sintered compact Grant 10,347,471 - Narita July 9, 2	2019-07-09
Niobium Oxide Sintered Compact, Sputtering Target Formed From Said Sintered Compact, And Method Of Producing Niobium Oxide Sintered Compact App 20170309460 - Narita; Satoyasu	2017-10-26
NbO2 Sintered Compact, Sputtering Target Comprising the Sintered Compact, and Method of Producing NbO2 Sintered Compact App 20150255260 - Narita; Satoyasu	2015-09-10
Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component Grant 9,013,009 - Takahata , et al. April 21, 2	2015-04-21
High-purity Lanthanum, Method For Producing Same, Sputtering Target Comprising High-purity Lanthanum, And Metal Gate Film Comprising High-purity Lanthanum As Main Component App 20140199203 - Takahata; Masahiro ; et al.	2014-07-17
Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component App 20130313659 - Takahata; Masahiro ; et al.	2013-11-28
Method of Storing Metal Lanthanum Target, Vacuum-sealed Metal Lanthanum Target, and Thin Film Formed by Sputtering the Metal Lanthanum Target App 20130277214 - Narita; Satoyasu ; et al.	2013-10-24

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