loadpatents
Patent applications and USPTO patent grants for Narazaki; Atsushi.The latest application filed is for "silicon carbide semiconductor device and power conversion apparatus".
Patent | Date |
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Power semiconductor device Grant 10,892,352 - Furukawa , et al. January 12, 2 | 2021-01-12 |
Silicon carbide semiconductor device and power conversion apparatus Grant 10,797,169 - Ishibashi , et al. October 6, 2 | 2020-10-06 |
Silicon Carbide Semiconductor Device And Power Conversion Apparatus App 20200144409 - ISHIBASHI; Kazuya ;   et al. | 2020-05-07 |
Silicon carbide semiconductor device, manufacturing method therefor and power conversion apparatus Grant 10,431,658 - Kagawa , et al. O | 2019-10-01 |
Power Semiconductor Device App 20190109220 - FURUKAWA; Akihiko ;   et al. | 2019-04-11 |
Semiconductor device and method for manufacturing the same Grant 10,243,067 - Konishi , et al. | 2019-03-26 |
Power semiconductor device Grant 10,192,977 - Furukawa , et al. Ja | 2019-01-29 |
Silicon Carbide Semiconductor Device, Manufacturing Method Therefor And Power Conversion Apparatus App 20190013385 - KAGAWA; Yasuhiro ;   et al. | 2019-01-10 |
Semiconductor device and method of manufacturing the same Grant 10,176,994 - Suzuki , et al. J | 2019-01-08 |
Semiconductor Device App 20180204909 - KONISHI; Kazuya ;   et al. | 2018-07-19 |
Semiconductor Device And Method Of Manufacturing The Same App 20180019131 - SUZUKI; Kenji ;   et al. | 2018-01-18 |
Semiconductor device Grant 9,799,648 - Narazaki , et al. October 24, 2 | 2017-10-24 |
Power Semiconductor Device App 20160372585 - FURUKAWA; Akihiko ;   et al. | 2016-12-22 |
Semiconductor Device App 20160293595 - NARAZAKI; Atsushi ;   et al. | 2016-10-06 |
High breakdown voltage semiconductor device having a resurf layer Grant 9,431,479 - Honda , et al. August 30, 2 | 2016-08-30 |
Semiconductor device having breakdown voltage enhancement structure Grant 9,219,113 - Takahashi , et al. December 22, 2 | 2015-12-22 |
Semiconductor Device And Method For Manufacturing The Same App 20150270378 - KONISHI; Kazuya ;   et al. | 2015-09-24 |
Semiconductor Device And Method For Manufacturing Same App 20150255535 - Taguchi; Kensuke ;   et al. | 2015-09-10 |
Semiconductor device Grant 9,105,486 - Narazaki August 11, 2 | 2015-08-11 |
Semiconductor Device And Method Of Manufacturing Semiconductor Device App 20140367737 - TAKAHASHI; Takuya ;   et al. | 2014-12-18 |
Semiconductor device and method of testing the same Grant 8,884,383 - Narazaki November 11, 2 | 2014-11-11 |
Semiconductor Device App 20140299917 - NARAZAKI; Atsushi | 2014-10-09 |
Semiconductor device Grant 8,809,969 - Tarui , et al. August 19, 2 | 2014-08-19 |
Power semiconductor device having an active region and an electric field reduction region Grant 8,742,474 - Hisamoto , et al. June 3, 2 | 2014-06-03 |
Semiconductor device and method of manufacturing the same Grant 8,618,604 - Narazaki December 31, 2 | 2013-12-31 |
Semiconductor device test method and apparatus, and semiconductor device Grant 8,593,167 - Narazaki November 26, 2 | 2013-11-26 |
Power semiconductor device Grant 8,552,468 - Narazaki October 8, 2 | 2013-10-08 |
Semiconductor device Grant 8,530,966 - Narazaki , et al. September 10, 2 | 2013-09-10 |
Method of measuring characteristics of a semiconductor element and method of manufacturing a semiconductor device Grant 8,519,733 - Narazaki August 27, 2 | 2013-08-27 |
Power semiconductor device and method of manufacturing the same Grant 8,450,183 - Fujii , et al. May 28, 2 | 2013-05-28 |
Method of manufacturing semiconductor device Grant 8,435,417 - Nakata , et al. May 7, 2 | 2013-05-07 |
Method For Manufacturing Semiconductor Device App 20120309117 - SUZUKI; Yuichiro ;   et al. | 2012-12-06 |
Semiconductor device Grant 8,247,867 - Nakata , et al. August 21, 2 | 2012-08-21 |
Semiconductor Device And Method Of Testing The Same App 20120205756 - NARAZAKI; Atsushi | 2012-08-16 |
Semiconductor Device App 20120153382 - NARAZAKI; Atsushi ;   et al. | 2012-06-21 |
Method of manufacturing semiconductor device Grant 8,178,365 - Narazaki , et al. May 15, 2 | 2012-05-15 |
Method of manufacturing power semiconductor device Grant 8,124,533 - Narazaki February 28, 2 | 2012-02-28 |
Method Of Measuring Characteristics Of A Semiconductor Element And Method Of Manufacturing A Semiconductor Device App 20120013349 - Narazaki; Atsushi | 2012-01-19 |
Semiconductor Device Test Method And Apparatus, And Semiconductor Device App 20110298485 - NARAZAKI; Atsushi | 2011-12-08 |
Method Of Manufacturing Semiconductor Device App 20110244604 - Narazaki; Atsushi ;   et al. | 2011-10-06 |
Semiconductor Device And Method Of Manufacturing The Same App 20110233715 - NARAZAKI; Atsushi | 2011-09-29 |
Power Semiconductor Device And Method Of Manufacturing The Same App 20110220914 - Fujii; Ryoichi ;   et al. | 2011-09-15 |
Semiconductor Device And Method Of Manufacturing The Same App 20110089522 - NARAZAKI; Atsushi | 2011-04-21 |
Semiconductor Device App 20110089487 - NAKATA; Kazunari ;   et al. | 2011-04-21 |
Semiconductor Device And Method Of Manufacturing A Semiconductor Device App 20110084354 - Honda; Shigeto ;   et al. | 2011-04-14 |
Method Of Manufacturing Semiconductor Device App 20110059612 - NAKATA; Kazunari ;   et al. | 2011-03-10 |
Power Semiconductor Device App 20100308401 - NARAZAKI; Atsushi | 2010-12-09 |
Semiconductor Device App 20100289110 - TARUI; Yoichiro ;   et al. | 2010-11-18 |
Method Of Manufacturing Power Semiconductor Device App 20100240183 - NARAZAKI; Atsushi | 2010-09-23 |
Semiconductor device Grant 7,741,655 - Hatori , et al. June 22, 2 | 2010-06-22 |
Semiconductor Device App 20090072268 - Hatori; Kenji ;   et al. | 2009-03-19 |
Power Semiconductor Device And Manufacturing Method Therefor App 20090014753 - Hisamoto; Yoshiaki ;   et al. | 2009-01-15 |
Semiconductor device Grant 7,319,264 - Narazaki January 15, 2 | 2008-01-15 |
Semiconductor Device App 20070114577 - NARAZAKI; Atsushi | 2007-05-24 |
Semiconductor Device App 20070001265 - Narazaki; Atsushi | 2007-01-04 |
Semiconductor device Grant 7,045,831 - Narazaki May 16, 2 | 2006-05-16 |
Semiconductor device including a predetermined film formed at a border between dielectric films Grant 6,933,576 - Uryuu , et al. August 23, 2 | 2005-08-23 |
Power semiconductor device having semiconductor-layer-forming position controlled by ion implantation without using photoresist pattern, and method of manufacturing such power semiconductor device Grant 6,927,455 - Narazaki August 9, 2 | 2005-08-09 |
Semiconductor device App 20050151254 - Narazaki, Atsushi | 2005-07-14 |
Semiconductor device and method of manufacturing the same App 20040173860 - Uryuu, Katsumi ;   et al. | 2004-09-09 |
Power semiconductor device having semiconductor-layer-forming position controlled by ion implantation without using photoresist pattern, and method of manufacturing such power semiconductor device App 20040124464 - Narazaki, Atsushi | 2004-07-01 |
Insulated gate semiconductor device having first trench and second trench connected to the same Grant 6,642,600 - Narazaki , et al. November 4, 2 | 2003-11-04 |
Insulated Gate Semiconductor Device Having First Trench And Second Trench Connected To The Same App 20030168713 - Narazaki, Atsushi ;   et al. | 2003-09-11 |
Semiconductor device having diode for input protection circuit of MOS structure device App 20020050602 - Narazaki, Atsushi | 2002-05-02 |
Insulated gate semiconductor device and method of manufacturing the same Grant 6,285,058 - Narazaki , et al. September 4, 2 | 2001-09-04 |
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